| PART |
Description |
Maker |
| IS43R32400A-5B IS43R32400A-6B |
4Meg x 32 128-MBIT DDR SDRAM
|
Integrated Silicon Solution, Inc.
|
| K4S280832C K4S280832C-TC_L75 K4S280832C-TC_L1H K4S |
16M X 8 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
4MB x 8Bit x 4 Banks Synchronous DRAM Data Sheet
128Mbit SDRAM 4M x 8Bit x 4 Banks Synchronous DRAM LVTTL
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| TC554001FI TC554001FI-10 TC554001FI-85 TC554001FTI |
524288 WORDS x 8BIT STATIC RAM
524,288 WORDS x 8BIT STATIC RAM
|
TOSHIBA[Toshiba Semiconductor]
|
| HY57V64820HGLTP-5 HY57V64820HGLTP-55 HY57V64820HGL |
4 Banks x 2M x 8Bit Synchronous DRAM 8M X 8 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
4 Banks x 2M x 8Bit Synchronous DRAM 8M X 8 SYNCHRONOUS DRAM, PDSO54
CAP 0.01UF 50V 10% X7R SMD-0805 TR-13 PLATED-NI/SN 8M X 8 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
Aluminum Electrolytic Radial Leaded General Purpose Capacitor; Capacitance: 220uF; Voltage: 25V; Case Size: 8x11.5 mm; Packaging: Bulk
|
Hynix Semiconductor, Inc.
http://
Hynix Semiconductor Inc.
HYNIX[Hynix Semiconductor]
|
| KM68V1000BLE_LE-L KM68U1000BLE_LE-L KM68U1000BLG-1 |
CONNECTOR ACCESSORY 连接器附
128K X 8bit Low Power and Low Voltage CMOS Statinc RAM 128K的8位低功耗和低电压的CMOS Statinc内存
(KM68V1000B / KM68U1000B) 128K X 8bit Low Power and Low Voltage CMOS Statinc RAM
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| TB62705CF TB62705CFN TB62705CP EE08019 TB62705 |
8BIT SHIFT REGISTER / LATCHES & CONSTANT CURRENT DRIVERS
8BIT SHIFT REGISTER, LATCHES & CONSTANT CURRENT DRIVERS
From old datasheet system
|
Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
|
| MN101E11G |
Microcomputer - 8bit - General Purpose
|
Panasonic
|
| HY57V56820BLT |
4 Banks x 8M x 8Bit Synchronous DRAM
|
Hynix Semiconductor
|
| MN101C67D MN101C67G |
Microcomputer - 8bit - General Purpose
|
Panasonic
|
| BU2098F |
8bit Serial IN / Parallel Out Driver
|
Rohm
|
| MN101C94A |
Microcomputer - 8bit - General Purpose
|
Panasonic
|
