PART |
Description |
Maker |
LE28F4001C LE28F4001CTS LE28F4001CTS-12 |
4M-Bit (512k 8) Flash EEPROM 4M-Bit (512k 】 8) Flash EEPROM 4M-Bit (512k 8) Flash EEPROM 4M-Bit (512k × 8) Flash EEPROM
|
SANYO[Sanyo Semicon Device]
|
MX26C4000BTI-90 MX26C4000BQI-15 MX26C4000BQI-10 MX |
4M-BIT [512K x 8] CMOS MULTIPLE-TIME-PROGRAMMABLE-EPROM 512K X 8 FLASH 12V PROM, 120 ns, PDSO32 4M-BIT [512K x 8] CMOS MULTIPLE-TIME-PROGRAMMABLE-EPROM 512K X 8 FLASH 12V PROM, 120 ns, PQCC32 4M-BIT [512K x 8] CMOS MULTIPLE-TIME-PROGRAMMABLE-EPROM 512K X 8 FLASH 12V PROM, 90 ns, PQCC32 4M-BIT [512K x 8] CMOS MULTIPLE-TIME-PROGRAMMABLE-EPROM 512K X 8 FLASH 12V PROM, 90 ns, PDIP32 Switch Actuator; For Use With:18 Series Switches; Accessory Type:Spring Lever Actuator RoHS Compliant: Yes IC DRIVER 1/2BRDG LOW SIDE 16DIP DIODE SCHTTKY 150V 2X30A TO247AD
|
Macronix International Co., Ltd.
|
79LV2040RPFE-20 79LV2040RPFH-20 79LV2040RPFK-20 79 |
20 Megabit (512K x 40-Bit) Low Voltage EEPROM MCM 512K X 40 EEPROM 3V, 250 ns, PDFP100
|
Maxwell Technologies, Inc
|
AM29LV800DB-70EF AM29LV800DB-90EF AM29LV800DB-70WC |
Flash Memory IC; Memory Size:8Mbit; Package/Case:48-TSOP; Supply Voltage Max:3V; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes; Access Time, Tacc:70nS; Series:AM29 RoHS Compliant: Yes 512K X 16 FLASH 3V PROM, 70 ns, PDSO48 512K X 16 FLASH 3V PROM, 90 ns, PDSO48 512K X 16 FLASH 3V PROM, 70 ns, PBGA48 512K X 16 FLASH 3V PROM, 90 ns, PBGA48 512K X 16 FLASH 3V PROM, 120 ns, PDSO48 512K X 16 FLASH 3V PROM, 120 ns, PDSO44 512K X 16 FLASH 3V PROM, 90 ns, PDSO44
|
Spansion, Inc. SPANSION LLC
|
CAT28C16AKI-20 CAT25C03U-1.8 CAT25040YI-GT3 CAT24W |
EEPROM (256x8) 2K 1.8-6.0 The CAT24FC02 is a 2-kb Serial CMOS EEPROM internally organized as 256 words of 8 bits each 该CAT24FC02是一 KB的EEPROM的国56位每字举办的串行CMOS EEPROM (4kx8) 32K 1.8-6.0 EEPROM (2048x8) 16K EEPROM (256x8) 2K 2.5-6.0 EEPROM 64K X 8 512K 5V EEPROM (256x8) (128x16) 2K EEPROM (8kx8) 64K 3V EEPROM (512x8) (256x16) 4K EEPROM (2048x8)(1024x16)16K EEPROM (128x8) 1k 1.8-6.0 EEPROM (8kx8) 64K 1.8-6.0 EEPROM 16K-Bit CMOS PARA EEPROM EEPROM (512x8) 4k 2.5-6.0 EEPROM (4096x8) 32k 1.8-6.0 EEPROM (384x8) 128k 16 EEPROM (2Kx8) 16K 5V 90ns
|
Electronic Theatre Controls, Inc. ON Semiconductor Qualtek Electronics, Corp. Lumex, Inc. Vicor, Corp. EPCOS AG NXP Semiconductors N.V. Atmel, Corp. Linear Technology, Corp. Amphenol, Corp. Bourns, Inc. TE Connectivity, Ltd. Integrated Silicon Solution, Inc. Anpec Electronics, Corp.
|
SST28SF040A SST28SF040A-120 SST28SF040A-120-4C-EH |
4 Mbit (512K x8) SuperFlash EEPROM 4 Mbit (512K x 8) super-flash EEPROM
|
SST[Silicon Storage Technology, Inc]
|
AM29LV004BT-80FE AM29LV004BB-80EI AM29LV004BT-80FC |
4 Megabit (512 K x 8-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory 512K X 8 FLASH 3V PROM, 80 ns, PDSO40 512K X 8 FLASH 3V PROM, 70 ns, PDSO40
|
Advanced Micro Devices, Inc. ADVANCED MICRO DEVICES INC SPANSION LLC
|
AT49F8192 AT49F8192- AT49F8192T-90TI AT49F8192-12R |
8-Megabit 512K x 16 5-volt Only CMOS Flash Memory 512K X 16 FLASH 5V PROM, 90 ns, PDSO48 8-Megabit 512K x 16 5-volt Only CMOS Flash Memory 512K X 16 FLASH 5V PROM, 90 ns, PDSO44 Quadruple 2-Input Positive-NAND Gate 14-TSSOP -40 to 125
|
Atmel, Corp. Atmel Corp. ATMEL[ATMEL Corporation]
|
LE25FV051T |
512K Serial Flash EEPROM
|
Sanyo Electric
|
KM29V040T |
512K x 8 Bit NAND Flash Memory(512K x 8NAND闪速存储器)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|