| PART |
Description |
Maker |
| MT88E41AE MT88E41AN MT88E41AS |
CMOS Extended Voltage Calling Number Identification Circuit (ECNIC) TELEPHONE CALLING NO IDENT CKT, PDSO20
|
Zarlink Semiconductor Inc.
Zarlink Semiconductor, Inc.
|
| MT88E43BS MT88E43B MT88E43BE MT88E43BS1 MT88E43BSR |
Extended Voltage Calling Number Identification Circuit 2
|
Zarlink Semiconductor Inc
|
| K4E151611 K4E151611D K4E151612D K4E171611D K4E1716 |
1M x 16 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 1K refresh cycle.
1M x 16 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 1K refresh cycle.
1M x 16Bit CMOS Dynamic RAM with Extended Data Out
|
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| MT8843 MT8843AE MT8843AS |
CMOS Calling Number Identification Circuit 2 Preliminary Information
|
Mitel Networks Corporat...
MITEL[Mitel Networks Corporation]
|
| K4E660812E-JC/L K4E640812E-JC/L K4E660812E-TC/L K4 |
8M X 8 EDO DRAM, 45 ns, PDSO32
8M x 8bit CMOS Dynamic RAM with Extended Data Out 8米8位的CMOS动态随机存储器的扩展数据输
(K4E640812E / K4E660812E) 8M x 8bit CMOS Dynamic RAM with Extended Data Out
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| KM48V8104B KM48V8004B KM48V8004BKL-5 KM48V8004BKL- |
8M x 8bit CMOS dynamic RAM with extended data out, 45ns
8M x 8bit CMOS dynamic RAM with extended data out, 60ns
8M x 8bit CMOS dynamic RAM with extended data out, 50ns
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| GLT44016 GLT44016-25J4 GLT44016-25TC GLT44016-28J4 |
30ppm/C Drift, 3.9uA, SOT23-3, SC70-3 Voltage Reference 3-SOT-23 -40 to 125
256K X 16 CMOS DYNAMIC RAM WITH EXTENDED DATA OUTPUT
|
Electronic Theatre Controls, Inc.
List of Unclassifed Manufacturers
etc
|
| SM8220P SM8221 SM8220 SM8221P SM8221S SM8220S |
CALLER NUMBER ID CIRCUIT,CMOS,DIP,16PIN,PLASTIC
From old datasheet system
Calling Number Identification Receiver IC
|
NPC[Nippon Precision Circuits Inc]
http://
|
| KM416V1004A-6 KM416V1004A KM416V1004A-8 KM416V1004 |
1M x 16 BIT CMOS DYNAMIC RAM WITH EXTENDED DATA OUT
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| K4E661611D-TC60 K4E641611D-TC50 K4E641611D-TC60 K4 |
4M x 16bit CMOS Dynamic RAM with Extended Data Out
|
SAMSUNG[Samsung semiconductor]
|
| K4E641612C-TL45 K4E661612C-TL45 K4E641612C-60 K4E6 |
4M x 16bit CMOS Dynamic RAM with Extended Data Out
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| KM416C12CJ-L5 KM416V12CJ-L5 KM416V10CJ-L5 KM416C10 |
1M x 16Bit CMOS Dynamic RAM with Extended Data Out 100万16的CMOS动态随机存储器的扩展数据输
|
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
