PART |
Description |
Maker |
KTK5162S KTK5162 |
SMOS FET/ Analog Switch Application N CHANNEL MOS FIELD EFFECT TRANSISTOR (ULTRA-HIGH SPEED SWITCHING/ ANALOG SWITCH) N CHANNEL MOS FIELD EFFECT TRANSISTOR (ULTRA-HIGH SPEED SWITCHING, ANALOG SWITCH)
|
Korea Electronics (KEC) KEC[KEC(Korea Electronics)]
|
KTK5134S |
SMOS FET/ Analog Switch Application N CHANNEL MOS FIELD EFFECT TRANSISTOR (ULTRA-HIGH SPEED SWITCHING, ANALOG SWITCH) N CHANNEL MOS FIELD EFFECT TRANSISTOR (ULTRA-HIGH SPEED SWITCHING/ ANALOG SWITCH)
|
Korea Electronics (KEC) KEC[KEC(Korea Electronics)]
|
KTK5164S |
SMOS FET/ Analog Switch Application N CHANNEL MOS FIELD EFFECT TRANSISTOR (ULTRA-HIGH SPEED SWITCHING, ANALOG SWITCH)
|
Korea Electronics (KEC) KEC[KEC(Korea Electronics)]
|
KTK5133S |
SMOS FET/ Analog Switch Application N CHANNEL MOS FIELD EFFECT TRANSISTOR (ULTRA-HIGH SPEED SWITCHING, ANALOG SWITCH)
|
Korea Electronics (KEC) KEC[KEC(Korea Electronics)] KEC Holdings
|
IP4284CZ10-TBR IP4284CZ10-TT |
ESD protection for ultra high-speed interfaces TVs, monitors ESD protection for ultra high-speed interfaces UNIDIRECTIONAL, SILICON, TVS DIODE
|
NXP Semiconductors N.V.
|
MTD5010M |
Ultra High Speed Photo Diode
|
Marktech Optoelectronics MARKTECH[Marktech Corporate]
|
1SS187 |
DIODE (ULTRA HIGH SPEED SWITCHING APPLICATION)
|
TOSHIBA[Toshiba Semiconductor]
|
1SS362 |
DIODE (ULTRA HIGH SPEED SWITCHING APPLICATION)
|
TOSHIBA[Toshiba Semiconductor]
|
KTK5132E KTK5132 |
N CHANNEL MOS FIELD EFFECT TRANSISTOR (ULTRA-HIGH SPEED SWITCHING, ANALOG SWITCH)
|
KEC[KEC(Korea Electronics)]
|
KTK5131E |
N CHANNEL MOS FIELD EFFECT TRANSISTOR (ULTRA-HIGH SPEED SWITCHING ANALOG SWITCH) N CHANNEL MOS FIELD EFFECT TRANSISTOR (ULTRA-HIGH SPEED SWITCHING, ANALOG SWITCH)
|
KEC[KEC(Korea Electronics)]
|
1SS301 E000262 |
From old datasheet system DIODE (ULTRA HIGH SPEED SWITCHING APLICATIONS)
|
TOSHIBA[Toshiba Semiconductor]
|
KDS121 |
SILICON EPITAXIAL PLANAR DIODE (ULTRA HIGH SPEED SWITCHING)
|
KEC Holdings KEC(Korea Electronics)
|