| PART |
Description |
Maker |
| L8828-04 L8828-06 L8828-07 L8828-41 L8828-42 L8828 |
Infrared detector module with preamp
CW LASER DIODES
CAP 18PF 50V 1% C0G SMD-0402 BULK SN100
CAPACITOR 10PF 5% 50V COG 0402
CAP CER 680PF 25V X7R 0201
CAP CER 330PF 16V X7R 0201
CAP CER 220PF 16V X7R 0201
CAP CER 470PF 16V 10% X7R 0201
CAP CER 110PF 50V C0G 0402
CAP CER 100PF 16V 10% X7R 0201
CAP CER 100PF 25V X7R 0201
CAP 100PF 50V 5% C0G SMD-0402 TR-7-PA SN100
CAP CER 680PF 16V 10% X7R 0201
CABLE SMA PLUG-PLUG HF-.086 24,1 连续激光二极管
CABLE SMA PLUG-PLUG HF-.141 3,1 连续激光二极管
CAP CER 3300PF 16V X7R 0201 连续激光二极管
|
http://
HAMAMATSU[Hamamatsu Corporation]
Hamamatsu Photonics K.K.
|
| TEL3-0513 TEL3-0512 TEL3-1223 TEL3-1222 TEL3-4823 |
DC/DC Converter 直流/直流转换
CAP CER .18UF 100V 10% X7R 1812
CAP CER .22UF 100V 20% X7R 1812
CAP CER .15UF 100V 10% X7R 1812
|
TRACO ELECTRONIC AG.
TRACO[Traco Electronic AG]
TRACOPOWER[TRACO Electronic AG]
|
| GA342D1XGF330JY02L |
CAP 33PF 250VAC 5% SL-TC SMD-1808 TR-7-PL SAFETY CAPACITOR, CERAMIC, MULTILAYER, SL, 0.000033 uF, SURFACE MOUNT, 1808
|
Murata Manufacturing Co., Ltd.
|
| QM150 QM150CY-H |
CAP CER .47UF 250V X7R 10% 1812
HIGH POWER SWITCHING USE INSULATED TYPE
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| FC805 |
0.5 A, 30 V, 2 ELEMENT, SILICON, SIGNAL DIODE
30V, 500mA Rectifier
CAP CER 6800PF 100V 20% X7R 0805
|
Sanyo Semicon Device
Sanyo Electric Co.,Ltd.
|
| HY57V64820HG HY57V64820HGLT-5 HY57V64820HGLT-55 HY |
4 Banks x 2M x 8Bit Synchronous DRAM 8M X 8 SYNCHRONOUS DRAM, 6 ns, PDSO54
CAP 0.01UF 50V 5% X7R SMD-0805 TR-7 PLATED-NI/SN 8M X 8 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
CAP 1500PF 50V 10% X7R SMD-0603 T&R-7IN-PA NI-SN 8M X 8 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
100PF50V_5%_NPO_,SM0603
CSM, CER 100PF 50V 5% 060
|
Hynix Semiconductor, Inc.
http://
Hynix Semiconductor Inc.
HYNIX[Hynix Semiconductor]
|
| HU2C471KS HU1C330KC HU2E221KC HU1E221KC HU2E220KC |
CAP,CER,CHIP,1206,Y5V, 80-20%,50VOLTS,1UF,
CONN,S/R,10POS,254C-10-1, CLOSED END S/ R COVER
CABLE,MOUSE,10',DE9 FEMALE TO DE9 FEMALE,SERIAL
CABLE,9PIN,SERIAL,10' DE9 F-F
CABLE,PC/AT TO SERIAL PRINTER NULL MODEM,10',DE9F TO DB25M
CABLE,ADAPTER,6',DC37 M-F,STRAIGHT THROUG,37C
HEADER,STRAT MALE,2RW,8 PIN, .079"CTR,.025"PST,.23"GOLD TL
HEADER,STRAT MALE,2RW,6 PIN, .079"CTR,.025"PST,.23"GOLD TL
POT,TRIM,1/4W,2.5K VERTICAL MOUNT 19/32"
TOOL KIT,51PC 4/cs
AP,CER,CHIP,0805,X5R,6.3V, 4.7UF,10%, (10)
AP,CER,CHIP,0805,C0G, 5%,50V,270PF, (10)
AP,CER,.1UF,10%,100V,X7R, 1210, (10)
AP,CER,.22UF,10%,50V,X7R, 1210, (10)
CHIP TYPE, MID-TO-HIGH VOLTAGE 片式，中高压
AP,CER,CHIP,0603,Y5V, 80-20%,10V,1UF,INCREM of 10 片式，中高压
SOCKET,DILS,20 PIN,MACHINE- TOOLED PINS,SOLDER TAIL 片式，中高压
CAP,CER,CHIP,0805,50V, X7RTEMP,0.047UF, /-10%,(10) 片式，中高压
CONN,DSUB,.590"RT,9P-M, LONG,METAL HOUSING 片式，中高压
|
DB Lectro Inc.
DB Lectro, Inc.
TE Connectivity, Ltd.
|
| Q62702-B592 BB831 |
CAP CER .47UF 25V X7R RAD
Silicon Variable Capacitance Diode (Frequency range up to 2 GHz special design for use in TV-sat indoor units)
|
SIEMENS AG
Siemens Group
SIEMENS[Siemens Semiconductor Group]
|
| CHV1808N1K0270JCT-LF CHV1808N1K0101JCT-LF CHV1808N |
CAPACITOR, CERAMIC, MULTILAYER, 1000 V, C0G, 0.000027 uF, SURFACE MOUNT, 1808 CHIP, ROHS COMPLIANT
CAPACITOR, CERAMIC, MULTILAYER, 1000 V, C0G, 0.0001 uF, SURFACE MOUNT, 1808 CHIP, ROHS COMPLIANT
CAPACITOR, CERAMIC, MULTILAYER, 1000 V, X7R, 0.001 uF, SURFACE MOUNT, 1808 CHIP, ROHS COMPLIANT
CAPACITOR, CERAMIC, MULTILAYER, 1000 V, X7R, 0.0027 uF, SURFACE MOUNT, 1808 CHIP, ROHS COMPLIANT
CAPACITOR, CERAMIC, MULTILAYER, 1000 V, C0G, 0.001 uF, SURFACE MOUNT, 1808 CHIP, ROHS COMPLIANT
CAPACITOR, CERAMIC, MULTILAYER, 1000 V, C0G, 0.000033 uF, SURFACE MOUNT, 1808 CHIP, ROHS COMPLIANT
CAPACITOR, CERAMIC, MULTILAYER, 1000 V, X7R, 0.0022 uF, SURFACE MOUNT, 1808 CHIP, ROHS COMPLIANT
|
Cal-Chip Electronics
|
| GM123210SRSWB-01 GM123210GFEBB-01 GM123210GFENB-01 |
LCD MODULE SPECIFICATION 液晶模组规格
CAP 1500PF 100V 10% X7R AXIAL TR-14
CAP 0.01UF 100V 10% X7R AXIAL TR-14
|
Electronic Theatre Controls, Inc.
ETC[ETC]
List of Unclassifed Manufacturers
http://
|
| BFS17P Q62702-F940 BFS17PQ62702-F940 |
NPN Silicon RF Transistor (For broadband amplifiers up to 1GHz at collector currents from 1mA to 20mA) UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, TO-236
CAP 15000PF X7R 250VAC X2 2220
TRANSISTOR UHF BIPOLAR BREITBAND
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
|
