| PART |
Description |
Maker |
| IMP1233D IMP1810 IMP1811 IMP1812 IMP1815 IMP1816 I |
4.125V power reset
RELAY 024VDC 01A DPDT-XX FORM:2C UC
Bi-Lobe Standard Metal Shell Nano Offset Connector
Low Power 5V/3.0V P Reset
Low Power/ 5V/ P Reset
Low Power, 5V, 楼矛P Reset
Low Power 5V P Reset
Low Power, 5V, P Reset
Low Power, 5V, μP Reset
4.375V power reset
|
IMP INC.
IMP Inc
IMP[IMP, Inc]
IMP[IMP Inc]
|
| 2SA2118 |
Power Device - Power Transistors - General-Purpose power amplification
Power Transistors Silicon PNP epitaxial planar type
|
PANASONIC[Panasonic Semiconductor]
|
| 45912-0030 0459120030 |
12.90mm (.508) Pitch EXTreme PowerEdge? Mixed Power/Signal Card Edge Connector, Double Sided, 4 Segments (Power, Signal, Power, Power Sequence), Press-Fit
|
Molex Electronics Ltd.
|
| 45912-0026 0459120026 |
12.90mm (.508) Pitch EXTreme PowerEdge? Mixed Power/Signal Card Edge Connector, Double Sided, 4 Segments (Power, Power, Signal, Power Sequence), Press-Fit
|
Molex Electronics Ltd.
|
| MJE2955T03 MJE34003 MJE52103 MJE585203 MJE80203 MR |
COMPLEMENTARY SILICON POWER TRANSISTORS
COMPLEMETARY SILICON POWER TRANSISTORS
SILICON NPN TRANSISTOR
HIGH VOLTAGE PNP POWER TRANSISTOR
SILICON NPN POWER DARLINGTON TRANSISTOR
RF Power Field Effect Transistors
880 MHz, 40 W AVG. 26 V SINGLE N-CDMA N-Channel Enhancement-Mode Lateral MOSFETs
RF LDMOS Wideband Integrated Power Amplifiers
GENERAL PURPOSE L TO X-BAND GaAs MESFET
10 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-220AB
|
FREESCALE
NEC
STMICROELECTRONICS[STMicroelectronics]
|
| 2SA886 2SA0886 |
Power Device - Power Transistors - Others
Silicon PNP epitaxial planar type (For low-frequency power amplification Complementary)
|
PANASONIC[Panasonic Semiconductor]
|
| 2SD1719 |
Power Device - Power Transistors - General-Purpose power amplification
Silicon NPN triple diffusion planar type
|
Panasonic Semiconductor
|
| NTC10D20 NTC100D10 NTC100D11 NTC100D9 NTC10D10 NTC |
Conversion power, switch mode power supply, UPS power protection
|
List of Unclassifed Man...
|
| IRLZ24N-006 IRL530N-015PBF IRL530N-031PBF IRL2505- |
18 A, 55 V, 0.06 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
15 A, 100 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
104 A, 55 V, 0.008 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
120 A, 30 V, 0.006 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
48 A, 100 V, 0.026 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
39 A, 20 V, 0.02 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
61 A, 20 V, 0.013 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
56 A, 30 V, 0.014 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
85 A, 20 V, 0.01 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
100 A, 30 V, 0.007 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
24 A, 30 V, 0.04 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
27 A, 55 V, 0.035 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
41 A, 55 V, 0.022 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
48 A, 20 V, 0.016 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
77 A, 55 V, 0.01 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
Bourns, Inc.
Vishay Intertechnology, Inc.
|
| 2SA2067 |
Power Device - Power Transistors - General-Purpose power amplification
|
Panasonic
|
| 2SD1272 |
Power Device - Power Transistors - General-Purpose power amplification
|
Panasonic
|
|
