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  rg-400 u Datasheet PDF File

For rg-400 u Found Datasheets File :: 7235    Search Time::1.5ms    
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    PESD1CAN-U

NXP Semiconductors
Part No. PESD1CAN-u
OCR Text ...device under test) gnd gnd 450 rg 223/u 50 coax esd tester iec 61000-4-2 network c s = 150 pf; r d = 330 4 ghz digital oscilloscope 10x attenuator unclamped +8 kv esd pulse waveform (iec 61000-4-2 network) unclamped -8 kv esd pulse wav...
Description CAN bus ESD protection diode

File Size 409.56K  /  12 Page

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    Z2K600-RG-10 Z2H152-RB-10 Z2H202-RB-10 Z2K102-RB-10 Z2K301-RE-10 Z2K151-RF-10

Superworld Electronics
Part No. Z2K600-RG-10 Z2H152-RB-10 Z2H202-RB-10 Z2K102-RB-10 Z2K301-RE-10 Z2K151-RF-10
OCR Text RG-10 (a)(b)(c) (d) (e) (f) (g) (a) Series code (b) Dimension code (c) Material code (d) Impedance code : 600 = 60 (e) R : Reel (f) C...400 F Z2K1 -RF-1 CM 160 21 8K-121T 0 06 Z2K121-RF -00 IM PED ANC hm E(O ) 120 IM PED ANC...
Description FERRITE CHIP BEADS

File Size 365.31K  /  9 Page

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    Samsung Semiconductor Co., Ltd.
Omron Electronics, LLC
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Electronic
SAMSUNG[Samsung semiconductor]
Part No. K4M56163PE-RG K4M56163PE-R K4M56163PE-F90 K4M56163PE-F1L K4M56163PE-BF1L0 K4M56163PE-RG1L0 K4M56163PE-BF900
OCR Text ... 40 150 125 115 80 Max 85/70 400 300 250 mA C 2 Self Refresh Current ICC6 CKE 0.2V Full Array 1/2 of Full Array 1/4 of Full Array uA NOTES: 1. Measured with outputs open. 2. Refresh period is 64ms. 3. unless othe...
Description 4M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA 4米16 × 4银行4FBGA移动SDRAM
16M X 16 SYNCHRONOuS DRAM, 7 ns, PBGA54 0.80 MM PITCH, CSP-54
16M X 16 SYNCHRONOuS DRAM, 7 ns, PBGA54 0.80 MM PITCH, LEAD FREE, CSP-54

File Size 110.29K  /  12 Page

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    FQB5N50C FQI5N50C FQB5N50CTM FQI5N50CTU

Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
Part No. FQB5N50C FQI5N50C FQB5N50CTM FQI5N50CTu
OCR Text ... 4, 5) VDD = 250 V, ID = 5A, RG = 25 (Note 4, 5) -------- 12 46 50 48 18 2.2 9.7 35 100 110 105 24 --- ns ns ns ns nC nC nC...400 Crss 200 Notes ; 1. VGS = 0 V 2. f = 1 MHz 4 2 Note : ID = 5A 0 -1 10 0 10...
Description 500V N-Channel MOSFET 5 A, 500 V, 1.4 ohm, N-CHANNEL, Si, POWER, MOSFET
500V N-Channel Advance Q-FET C-Series

File Size 631.33K  /  9 Page

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    7MBR10SA120

FUJI[Fuji Electric]
FUJI ELECTRIC HOLDINGS CO., LTD.
Part No. 7MBR10SA120
OCR Text ... f=1MHz VCC=600V IC=10A VGE=15V RG=120 IF=10A chip terminal Min. 7MBR10SA120 Characteristics Typ. Max. 1.0 0.2 5.5 7.2 8.5 2.1 2.15 2.6 ...400 10 200 5 100 Coes Cres 50 0 5 10 15 20 25 30 35 Collector - Emitter voltage : VCE [ ...
Description    IGBT(1200V/10A)

File Size 618.80K  /  7 Page

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    FQP4P40

FAIRCHILD[Fairchild Semiconductor]
Part No. FQP4P40
OCR Text ...arge VDD = -200 V, ID = -3.5 A, RG = 25 (Note 4, 5) -------- 13 55 35 37 18 3.8 9.4 35 120 80 85 23 --- ns ns ns ns nC nC nC ...400 Notes : 1. VGS = 0 V 2. f = 1 MHz 4 200 Crss 2 Note : ID = -3.5 A 0 -1 10 ...
Description 400V P-Channel MOSFET

File Size 636.50K  /  8 Page

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    IRF710B IRFS710B

FAIRCHILD[Fairchild Semiconductor]
Part No. IRF710B IRFS710B
OCR Text ... 5) VDD = 200 V, ID = 2.0 A, RG = 25 (Note 4, 5) -------- 6.0 25 20 25 7.7 1.5 3.2 20 60 50 60 10 --- ns ns ns ns nC nC nC ...400 VDS = 200V VGS, Gate-Source Voltage [V] Capacitance [pF] 300 Ciss 8 VDS = 3...
Description 400V N-Channel MOSFET

File Size 856.48K  /  10 Page

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    FQD6N40C FQU6N40C FQD6N40CTM FQU6N40CTU

FAIRCHILD[Fairchild Semiconductor]
Part No. FQD6N40C FQu6N40C FQD6N40CTM FQu6N40CTu
OCR Text ... 4, 5) VDD = 200 V, ID = 6A, RG = 25 (Note 4, 5) -------- 13 65 21 38 16 2.3 8.2 35 140 55 85 20 --- ns ns ns ns nC nC nC ...400 Crss 200 Notes ; 1. VGS = 0 V 2. f = 1 MHz 4 2 Note : ID = 6A 0 -1 10 0 10...
Description 400V N-Channel MOSFET
400V N-Channel Advance QFET C-Series

File Size 620.62K  /  9 Page

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    FM200TU-07A FM200TU-07A09

Mitsubishi Electric Semiconductor
Mitsubishi Electric Corporation
Part No. FM200Tu-07A FM200Tu-07A09
OCR Text ...V, ID = 100A, VGS1 = VGS2 = 15V RG = 13, Inductive load switching operation IS = 100A ns IS = 100A, VGS = 0V MOSFET part (1/6 module)*...400 600 800 1000 101 0.5 0.6 0.7 0.8 0.9 1.0 GATE CHARGE QG (nC) SO...
Description HIGH POWER SWITCHING uSE INSuLATED PACKAGE

File Size 104.50K  /  5 Page

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    IRLIZ44N

IRF[International Rectifier]
Part No. IRLIZ44N
OCR Text ...- VDD = 28V --- ID = 25A ns --- RG = 3.4, VGS = 5.0V --- RD = 1.1, See Fig. 10 Between lead, 4.5 --- 6mm (0.25in.) nH G from package 7.5 --- and center of die contact 1700 --- VGS = 0V 400 --- VDS = 25V pF 150 --- = 1.0MHz, See Fig. 5 12 ...
Description HEXFET? Power MOSFET

File Size 101.61K  /  8 Page

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