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NXP Semiconductors N.V.
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| Part No. |
BLF7G22L-160 BLF7G22LS-160
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| OCR Text |
...tions at frequencies from 2000 mhz to 2200 mhz. [1] test signal: 3gpp; test model 1; 64 dpch; par = 8.4 db at 0.01 % probability on ccdf;...khz (2) f = 2170 mhz; f + 885 khz (3) f = 2110 mhz; f ? 885 khz (4) f = 2170 mhz; f ? 885 khz v d... |
| Description |
Power LDMOS transistor S BAND, Si, N-CHANNEL, RF POWER, MOSFET
Power LDMOS transistor BLF7G22L-160<SOT502A (SOT502A)|<<http://www.nxp.com/packages/SOT502A.html<1<Always Pb-free,;BLF7G22L-160<SOT502A (SOT502A)|<<http://www.nxp.com/packages/SOT502A.html<1<Always Pb-free,;
Power LDMOS transistor BLF7G22LS-160<SOT502B (SOT502B)|<<http://www.nxp.com/packages/SOT502B.html<1<Always Pb-free,;BLF7G22LS-160<SOT502B (SOT502B)|<<http://www.nxp.com/packages/SOT502B.html<1<Always Pb-free,;
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| File Size |
1,107.65K /
18 Page |
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it Online |
Download Datasheet
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HITACHI[Hitachi Semiconductor]
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| Part No. |
BB501M BB501
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| OCR Text |
...n; PG = 21.5 dB typ. at f = 900 mhz * Low noise; NF = 1.85 dB typ. at f = 900 mhz * Withstanding to ESD; Build in ESD absorbing diode. Withs...khz
4V 3V
20 V DS = 5 V R G = 68 k
I D (mA)
16
Forward Transfer Admittance |y fs | (mS)... |
| Description |
Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier
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| File Size |
69.37K /
13 Page |
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it Online |
Download Datasheet |
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HITACHI[Hitachi Semiconductor]
Hitachi,Ltd.
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| Part No. |
BB501C BB501 BB5.1
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| OCR Text |
...n; PG = 21.5 dB typ. at f = 900 mhz * Low noise; NF = 1.85 dB typ. at f = 900 mhz * Withstanding to ESD; Build in ESD absorbing diode. Withs...khz
4V 3V
20 V DS = 5 V R G = 68 k
I D (mA)
16
Forward Transfer Admittance |y fs | (mS)... |
| Description |
Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier 内建偏置电路场效应晶体管集成电路超高甚高频射频放大器
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| File Size |
69.33K /
13 Page |
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it Online |
Download Datasheet |
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HITACHI[Hitachi Semiconductor]
Hitachi,Ltd.
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| Part No. |
BB404M BB404
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| OCR Text |
...in; (PG = 29 dB typ. at f = 200 mhz) * Low noise characteristics; (NF = 1.2 dB typ. at f = 200 mhz) * Wide supply voltage range; Applicable ...khz 18 5V 4V 3V 2V 6V
6V V DS = 9 V R G = 390 k 5V 4V 24 f = 1 khz 2V 18
3V
12
12
6 ... |
| Description |
Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier
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| File Size |
66.05K /
11 Page |
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it Online |
Download Datasheet |
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Price and Availability
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