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2SB113 KBP06 10020 55931K ON2615 326VT 2SB113 EM32117Q
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  f.philips. Datasheet PDF File

For f.philips. Found Datasheets File :: 9518    Search Time::1.421ms    
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    74HCU04 74HCU04D 74HCU04N 74HCU04PW 74HCU04DB

NXP Semiconductors
PHILIPS[Philips Semiconductors]
Part No. 74HCU04 74HCU04D 74HCU04N 74HCU04PW 74HCU04DB
OCR Text ...typically 5 mA at VCC = 5 V and f = 10 MHz). 1 1 f = -- ----------------T 2.2 RC RS 2 x R. The average ICC (mA) is approximately 3.5 + 0.05 x f (MHz) x C (pF) at VCC = 5.0 V (for more information refer to "DESIGNERS GUIDE"). Fig.13 ...
Description 74HCU04; Hex inverter

File Size 64.78K  /  7 Page

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    BAT54CW BAT54SW BAT54AW BAT54W BAT54CWT/R BAT54WSERIES

NXP Semiconductors / Philips Semiconductors
PHILIPS[Philips Semiconductors]
Part No. BAT54CW BAT54SW BAT54AW BAT54W BAT54CWT/R BAT54WSERIES
OCR Text ...easured at IR = 1 mA: see Fig.9 f = 1 MHz; VR = 1 V; see Fig.8 240 320 400 500 800 2 5 mV mV mV mV mV A ns PARAMETER CONDITIONS MAX. UNIT ...Philips Semiconductors Product specification Schottky barrier (double) diodes GRAPHICAL DATA ...
Description Schottky barrier (double) diodes - Cd max.: 10@VR=1V pF; Configuration: dual c.c. ; IF max: 200 mA; IFSM max: 600 A; IR max: 2@VR=25VA; VFmax: 400@IF=10mA mV; VR max: 30 V
Schottky barrier double diodes

File Size 29.07K  /  5 Page

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    BFG520W BFG520W_X BFG520W/X

PHILIPS[Philips Semiconductors]
NXP Semiconductors
Part No. BFG520W BFG520W_X BFG520W/X
OCR Text ...S IC Ptot hFE Cre fT GUM |S21|2 F PARAMETER collector-base voltage collector current (DC) total power dissipation DC current gain feedback c...Philips Semiconductors Product specification NPN 9 GHz wideband transistors BFG520W; BFG520...
Description NPN 9GHz wideband transistor(NPN 9G赫兹 宽带晶体
NPN 9 GHz wideband transistors

File Size 154.15K  /  16 Page

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    BFG520 BFG520_XR X BFG520_X BFG520XR BFG520/XR BFG520/X

NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
Part No. BFG520 BFG520_XR X BFG520_X BFG520XR BFG520/XR BFG520/X
OCR Text ...V; Tj = 25 C IC = 0; VCB = 6 V; f = 1 MHz IC = 20 mA; VCE = 6 V; f = 1 GHz; Tamb = 25 C IC = 20 mA; VCE = 6 V; f = 900 MHz; Tamb = 25 C IC =...Philips Semiconductors Product specification NPN 9 GHz wideband transistor LIMITING VALUES In...
Description NPN 9 GHz wideband transistor L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
NPN 9GHz wideband transistor(NPN 9G赫兹 宽带晶体

File Size 146.07K  /  13 Page

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    IRF530N

NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
Part No. IRF530N
OCR Text ...bond pad VGS = 0 V; VDS = 25 V; f = 1 MHz REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS Tj = 25C unless otherwise specified SYMBOL P...Philips Semiconductors Product specification N-channel TrenchMOSTM transistor IRF530N No...
Description N-channel TrenchMOS transistor(N沟道 TrenchMOS 晶体
N-channel TrenchMOS TM transistor

File Size 95.87K  /  7 Page

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