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PETERMANN-TECHNIK
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| Part No. |
HC-49US
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| OCR Text |
.../us for type with 2 leads hc-49/3us for type with 3 leads blank for 3.5 mm 2.5 for 2.5 mm frequency in mhz frequency tolerance at 25c required value temperature stability required value required value load capacitance required value blank ... |
| Description |
HIGH RELIABILITY FOR LOW COST
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| File Size |
132.28K /
2 Page |
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HYNIX[Hynix Semiconductor]
Hynix Semiconductor, Inc.
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| Part No. |
HY51VS18163HG HY51V18163HGT-6 HY51V18163HGJ HY51V18163HGT-5 HY51VS18163HGLJ-5 HY51VS18163HGLT-6 HY51VS18163HGLT-7 HY51V18163HGLJ-6 HY51V18163HGLJ-7 HY51V18163HGLT-5 HY51V18163HGLT-6 HY51V18163HGLT-7 HY51V18163HGLJ-5 HY51VS18163HGJ-6
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| OCR Text |
... CBR ref.) (CBR refresh, tRC=31.3us, tRAS <= 0.3us, Dout = High-Z, CMOS interface) Standby current (RAS=VIH, /CAS=VIL, Dout=Enable) Self refresh current (/RAS, /CAS <=0.2V, Dout=High-Z) Input leakage current, Any input (0V<= Vin<=4.6V) Outp... |
| Description |
Dynamic RAM organized 1,048,576 words x 16bit, 50ns, low power
Dynamic RAM organized 1,048,576 words x 16bit, self refresh, 70ns, low power
Dynamic RAM organized 1,048,576 words x 16bit, self refresh, 60ns, low power
Dynamic RAM organized 1,048,576 words x 16bit, self refresh, 50ns, low power
1M x 16Bit EDO DRAM 100万16 EDO公司的DRAM
1M x 16Bit EDO DRAM 1M X 16 EDO DRAM, 50 ns, PDSO44
1M x 16Bit EDO DRAM 1M X 16 EDO DRAM, 60 ns, PDSO44
Dynamic RAM organized 1,048,576 words x 16bit, 60ns, low power
Dynamic RAM organized 1,048,576 words x 16bit, 70ns, low power
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| File Size |
105.82K /
12 Page |
View
it Online |
Download Datasheet |
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Price and Availability
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