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ShenZhen FreesCale Electronics. Co., Ltd
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| Part No. |
AO4452
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| OCR Text |
...52 is fabricated with sdmos tm trench technology that combines excellent r ds(on) with low gate charge.the result is outstanding efficienc...based on t j(max) =150 c, using 10s junction-to-ambient thermal resistance. c. repetitive rating... |
| Description |
100V N-Channel MOSFET
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| File Size |
384.67K /
6 Page |
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it Online |
Download Datasheet
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ShenZhen FreesCale Electronics. Co., Ltd
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| Part No. |
AON7934
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| OCR Text |
...ted 100% rg tested ? latest trench power alphamos ( mos lv) technology ? very low rds(on) at 4.5v gs ? low gate charge ? high current c...based on r q ja t 10s value and the maximum allowed junction temperature of 150 c. the value in an... |
| Description |
30V Dual Asymmetric N-Channel AlphaMOS
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| File Size |
622.07K /
10 Page |
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it Online |
Download Datasheet |
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ShenZhen FreesCale Electronics. Co., Ltd
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| Part No. |
AO4486
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| OCR Text |
...ds the ao4486 combines advanced trench mosfet technology with a low resistance package to provide extremely low r ds(on) .this device is ide...based on t j(max) =150 c, using 10s junction-to-ambient thermal resistance. c. repetitive rating... |
| Description |
100V N-Channel MOSFET
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| File Size |
359.42K /
6 Page |
View
it Online |
Download Datasheet |
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