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NXP Semiconductors N.V.
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| Part No. |
BLF642 BLF642-15
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| OCR Text |
... hf to 1400 mhz. the excellent ruggedness and broadband performance of this device makes it ideal for digital applications. 1.2 features and benefits ? cw performance at 1300 mhz, a drain-source voltage v ds of 32 v and a quiescent dr... |
| Description |
Broadband power LDMOS transistor
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| File Size |
534.35K /
12 Page |
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Fuji Electric Holdings Co., Ltd.
FUJI[Fuji Electric]
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| Part No. |
2SK3588-01L 2SK3588-01S 2SK3588-01SJ
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| OCR Text |
...1. Guaranteed mark of avalanche ruggedness.
1. ( ) : Reference dimensions. 2. The metal part is covered with the solder plating, part of cutting is without the solder plating. DIMENSIONS ARE IN MILLIMETERS.
Note: 1. Guaranteed mark of... |
| Description |
N-CHANNEL SILICON POWER MOSFET 73 A, 100 V, 0.025 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
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| File Size |
109.35K /
4 Page |
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NXP Semiconductors N.V.
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| Part No. |
BLF884PS
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| OCR Text |
...al applications. the excellent ruggedness of this device makes it ideal for digital and analog transmitter applications. [1] measured [dbc] with delta marker at 4.3 mhz from center frequency. [2] par (of output signal) at 0.01 % probab... |
| Description |
UHF power LDMOS transistor
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| File Size |
447.89K /
16 Page |
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it Online |
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IXYS, Corp.
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| Part No. |
IXFD76N07-7X
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| OCR Text |
...mos process, which improves the ruggedness of the mosfet while reducing the reverse recovery time of the fast intrinsic diode to 250 ns or less at elevated (150c) junction temperature. the performance of the fast intrinsic diode is comparab... |
| Description |
70 V, 0.015 ohm, N-CHANNEL, Si, POWER, MOSFET 0.348 X 0.283 INCH, DIE
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| File Size |
50.72K /
3 Page |
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it Online |
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Price and Availability
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