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enhancementmode Datasheet PDF File

For enhancementmode Found Datasheets File :: 97 Search Time::0.891ms
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				ON Semiconductor
Part No.	NTP13N10-D
OCR Text	...fet 13 amps, 100 volts nchannel enhancementmode to220 features ? sourcetodrain diode recovery time comparable to a discrete fast recovery diode ? avalanche energy specified ? i dss and r ds(on) specified at elevated temperature typical ap...
Description	Power MOSFET 13 Amps, 100 Volts N-Channel Enhancement-Mode TO-220
File Size	67.44K / 8 Page	View it Online	Download Datasheet

				ON Semiconductor
Part No.	MGSF3441XT1-D
OCR Text	... 6 plastic pchannel enhancementmode tmos mosfet r ds(on) = 78 m w (typ) motorola preferred device d d d g d s ? motorola, inc. 1997 ? ? drain 3 gate source 4 6 5 2 1 rev 2 2 motorola smallsignal transistors, fet...
Description	Low Rds(on) Small-Signal MOSFETs TMOS Single P-Channel Field Effect Transistors
File Size	86.43K / 4 Page	View it Online	Download Datasheet

				ON Semiconductor
Part No.	MGW12N120-D
OCR Text	enhancementmode silicon gate this insulated gate bipolar transistor (igbt) uses an advanced termination scheme to provide an enhanced and reliable high voltageblocking capability. short circuit rated igbt's are specifi- cally suited for app...
Description	Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate
File Size	123.24K / 6 Page	View it Online	Download Datasheet

				ON Semiconductor
Part No.	MTV32N25E-D
OCR Text	... ! ! nchannel enhancementmode silicon gate the d 3 pak package has the capability of housing the largest chip size o f a n y s tandard , p lastic , s urfac e m oun t p owe r s emiconductor. this allow s i t to be used in...
Description	TMOS E-FET Power Field Effect Transistor D3PAK for Surface Mount N-Channel Enhancement - Mode Silicon Gate
File Size	267.28K / 10 Page	View it Online	Download Datasheet

				ON Semiconductor
Part No.	NTMSD3P102R2-D
OCR Text	...roduct preview fetky ? pchannel enhancementmode power mosfet and schottky diode dual so8 package features ? high efficiency components in a single so8 package ? high density power mosfet with low r ds(on) , schottky diode with low v f ? ind...
Description	FETKY P-Channel Enhancement-Mode Power MOSFET and Schottky Diode Dual SO-8 Package
File Size	126.78K / 12 Page	View it Online	Download Datasheet

				ON Semiconductor
Part No.	NTMSD3P303R2-D
OCR Text	...roduct preview fetky ? pchannel enhancementmode power mosfet and schottky diode dual so8 package features ? high efficiency components in a single so8 package ? high density power mosfet with low r ds(on) , schottky diode with low v f ? ind...
Description	FETKY E P-Channel Enhancement-Mode Power MOSFET and Schottky Diode Dual SO-8 Package
File Size	128.78K / 12 Page	View it Online	Download Datasheet

				Motorola
Part No.	TP33N10E
OCR Text	... nchannel enhancementmode silicon gate this a dvance d t mo s e fet i s d esigne d t o w ithstan d h igh energy in the avalanche and commutation modes. the new energy efficient d esig n a ls o o ffer s a d raintoso...
Description	Search --To MTP33N10E
File Size	194.49K / 8 Page	View it Online	Download Datasheet

				ON Semiconductor
Part No.	MGW20N120-D
OCR Text	enhancementmode silicon gate this insulated gate bipolar transistor (igbt) uses an advanced termination scheme to provide an enhanced and reliable high voltageblocking capability. short circuit rated igbt's are specifi- cally suited for app...
Description	Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate
File Size	125.44K / 6 Page	View it Online	Download Datasheet

				ON Semiconductor
Part No.	MGSF3442XT1-D
OCR Text	... 6 plastic nchannel enhancementmode tmos mosfet r ds(on) = 58 m w (typ) motorola preferred device ? d d d g d s drain 3 gate source 4 6 5 2 1 ? motorola, inc. 1997 ? 2 motorola smallsignal transistors, fets and ...
Description	Low Rds(on) Small-Signal MOSFETs TMOS Single N-Channel Field Effect Transistors
File Size	87.63K / 4 Page	View it Online	Download Datasheet

				ON Semiconductor
Part No.	MGS13002D-D
OCR Text	enhancementmode silicon gate this igbt contains a builtin free wheeling diode and a gate protection zener diodes. fast switching characteristics result in efficient operation at higher frequencies. this device is ideally suited for high fre...
Description	Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate
File Size	119.88K / 6 Page	View it Online	Download Datasheet

For enhancementmode Found Datasheets File :: 97 Search Time::0.891ms
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