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STPS1L4 100FPY 382601 W562DG SC165 2SD1915 47N10 LBN8005A
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    ST Microelectronics
Part No. L5150GJ
OCR Text ...or adjustable reset threshold early warning very wide stability range with low value output capacitor thermal shutdown and short-circuit protection wide temperature range (t j = -40c to 150c) enable input for enabling / disabling th...
Description 5V Low drop voltage regulator

File Size 493.57K  /  29 Page

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    SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Part No. KMM5361203C2WG KMM5361203C2W
OCR Text ... tWCStWCS(min), the cycle is an early write cycle and the data out pin will remain high impedance for the duration of the cycle. 8. Either tRCH or tRRH must be satisfied for a read cycle. 9. These parameter are referenced to the CAS leading...
Description 1M x 36 DRAM SIMM using 1Mx16 and 1Mx4 Quad CAS, 1K Refresh

File Size 272.21K  /  17 Page

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    SAMSUNG[Samsung semiconductor]
Part No. KMM5328004CSWG KMM5328004CSW
OCR Text ... tWCStWCS(min), the cycle is an early write cycle and the data out pin will remain high impedance for the duration of the cycle. 8. Either tRCH or tRRH must be satisfied for a read cycle. 9. These parameters are referenced to the CAS leadin...
Description 8M x 32 DRAM SIMM Using 4Mx16, 4K Refresh, 5V

File Size 431.01K  /  21 Page

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    SAMSUNG[Samsung semiconductor]
Part No. KMM5328004BSWG KMM5328004BSW
OCR Text ... tWCStWCS(min), the cycle is an early write cycle and the data out pin will remain high impedance for the duration of the cycle. 8. Either tRCH or tRRH must be satisfied for a read cycle. 9. These parameters are referenced to the CAS leadin...
Description 8M x 32 DRAM SIMM Using 4Mx16, 4K Refresh, 5V

File Size 397.76K  /  19 Page

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    SAMSUNG[Samsung semiconductor]
Part No. KMM5324004CSWG KMM5324004CSW
OCR Text ... tWCStWCS(min), the cycle is an early write cycle and the data out pin will remain high impedance for the duration of the cycle. 8. Either tRCH or tRRH must be satisfied for a read cycle. 9. These parameters are referenced to the CAS leadin...
Description 4M x 32 DRAM SIMM Using 4Mx16, 4K Refresh, 5V

File Size 426.11K  /  21 Page

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    SAMSUNG[Samsung semiconductor]
Part No. KMM5324004BSWG KMM5324004BSW
OCR Text ... tWCStWCS(min), the cycle is an early write cycle and the data out pin will remain high impedance for the duration of the cycle. 8. Either tRCH or tRRH must be satisfied for a read cycle. 9. These parameters are referenced to the CAS leadin...
Description 4M x 32 DRAM SIMM Using 4Mx16, 4K Refresh, 5V

File Size 393.13K  /  19 Page

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    Samsung Electronic
SAMSUNG[Samsung semiconductor]
Part No. KMM372V883BS KMM372V803BK KMM372V803BS KMM372V883BK
OCR Text ...f tWCStWCS(min) the cycle is an early write cycle and the data out pin will remain high impedance for the duration of the cycle. If tRWDtRWD(min), tCWDtCWD(min), tAWDtAWD(min) and tCPWDtCPWD(min). The cycle is a read-modify-write cycle and ...
Description 8M x 72 DRAM DIMM with ECC using 8Mx8, 4K 8K Refresh, 3.3V

File Size 416.95K  /  18 Page

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    4X16E43V 4X16E83V 4X16E83VTW-6 MEM4X16E43VTW-5

ETC[ETC]
Part No. 4X16E43V 4X16E83V 4X16E83VTW-6 MEM4X16E43VTW-5
OCR Text ...SH#), whichever occurs last. An early WRITE occurs when WE is taken LOW prior to either CAS# falling. A LATE WRITE or READMODIFY-WRITE occurs when WE falls after CAS# (CASL# or CASH#) is taken LOW. During early WRITE cycles, the data output...
Description 4 MEG x 16 EDO DRAM

File Size 577.77K  /  24 Page

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    Samsung Electronic
SAMSUNG[Samsung semiconductor]
Part No. KMM372V410CS KMM372V400CK KMM372V400CS KMM372V410CK
OCR Text ...f tWCStWCS(min) the cycle is an early write cycle and the data out pin will remain high impedance for the duration of the cycle. 8. Either tRCH or tRRH must be satisfied for a read cycle. 9. These parameters are referenced to the CAS leadin...
Description 4M x 72 DRAM DIMM with ECC using 4Mx4, 4K 2K Refresh, 3.3V

File Size 407.93K  /  19 Page

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    Samsung Electronic
SAMSUNG[Samsung semiconductor]
Part No. KMM372V404BS
OCR Text ...f tWCStWCS(min) the cycle is an early write cycle and the data out pin will remain high impedance for the duration of the cycle. If tRWDtRWD(min), tCWDtCWD(min), tAWDtAWD(min) and tCPWDtCPWD(min). The cycle is a read-modify-write cycle and ...
Description 4M x 72 DRAM DIMM with ECC using 4Mx16, 4Mx4 4K Refresh, 3.3V

File Size 414.20K  /  19 Page

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