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  1.5 1.9ghz Datasheet PDF File

For 1.5 1.9ghz Found Datasheets File :: 953    Search Time::4.203ms    
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    BFP181W Q62702-F1501

SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
Part No. BFP181W Q62702-F1501
OCR Text ....5mA to 12mA * fT = 8GHz F = 1.45dB at 900MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration BFP 181W RFs Q62702-F1501 1=E 2=C 3=E 4=B Package SOT-343 Max...
Description NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector currents from 0.5mA to 12mA)
From old datasheet system

File Size 59.99K  /  7 Page

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    BFP181 Q62702-F1271

SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
Part No. BFP181 Q62702-F1271
OCR Text ....5mA to 12mA * fT = 8GHz F = 1.45dB at 900MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration BFP 181 RFs Q62702-F1271 1=C 2=E 3=B 4=E Package SOT-143 Maxi...
Description NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector currents from 0.5mA to 12mA)
From old datasheet system

File Size 61.12K  /  7 Page

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    MGF7168C 7168CT_N

Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No. MGF7168C 7168CT_N
OCR Text ...output (Note1) Vd1 : Drain bias 1 Vd2 : Drain bias 2 Vg1 : Gate bias 1 Vg2 : Gate bias 2 GND : Connect to GND CASE : Connect to GND : Connec...5-j27.8 () : 1.88GHz ZL(max) = 3.3-j4.7 () : f=1.88GHz ZL(Po max)= 2.4-j5.8 () : f=1.88GHz max 11...
Description UHF BAND GaAs POWER AMPLIFIER
From old datasheet system

File Size 75.54K  /  12 Page

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    MGF7169C 7169CT_N

MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No. MGF7169C 7169CT_N
OCR Text ...: RF output Po Vd1 : Drain bias 1 Vd2 : Drain bias 2 : Gate bias Vg MC : Note1 GND : Connect to GND CASE : Connect to GND Note1:Connect to m...5 0 -12 MGF7169C UHF BAND GaAs POWER AMPLIFIER 1400 1200 1000 Idt Id2 Id (mA) Fin=1880MHz Vd1...
Description From old datasheet system
UHF BAND GaAs POWER AMPLIFIER

File Size 348.24K  /  20 Page

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    njr
Part No. NJG1528KC1
OCR Text ...8KC1 2.5V min. 36dBm typ. @f=1.9ghz, VCTL=2.8V 0.60dB typ. @f=0.9GHz, PIN=31dBm, VCTL=2.8V 0.70dB typ. @f=1.9ghz, PIN=25dBm, VCTL=2.8V 26...5 10 9 8 7 6 Pin connection 1. P1 2. VCTL1 3. GND 4. VCTL2 5. P2 6. P3 7. GND 8. GND 9. GND 10...
Description DPDT SWITCH GaAs MMIC

File Size 418.63K  /  10 Page

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    AD8314 AD8314ARM AD8314ARM-REEL AD8314ARM-REEL7 AD8314-EVAL ANALOGDEVICESINC.-AD8314-EVAL

Analog Devices, Inc.
AD[Analog Devices]
Part No. AD8314 AD8314ARM AD8314ARM-REEL AD8314ARM-REEL7 AD8314-EVAL ANALOGDEVICESINC.-AD8314-EVAL
OCR Text ...s from close to ground to about 1.2 V as the input signal level increases from 1.25 mV to 224 mV. This output is intended for use in measure...5 mA from a 2.7 V to 5.5 V supply. When powered down, the typical sleep current is 20 A. The AD83...
Description 100 MHz-2500 MHz 45 dB RF Detector/Controller

File Size 274.61K  /  16 Page

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    BGB420 BGB420E6327

Infineon Technologies A...
INFINEON[Infineon Technologies AG]
Part No. BGB420 BGB420E6327
OCR Text ...ncy oscillators * Gma=17.5dB at 1.8GHz * Small SOT343 package * Current easy adjustable by an external resistor * Open collector output * Ty...5 30 3 1.5 0.7 120 150 -40 ..+85 -65 ... +150 <270 Unit V mA mA V mA mW C C C K/W Notes: For deta...
Description Active Biased Transistor
Silicon MMICs - Mirror-Biased BFP 420 in SIEGET 25 Technology, Icmax = 30mA, SOT343
MMIC, LNA

File Size 436.18K  /  10 Page

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    BGB540

Infineon Technologies A...
INFINEON[Infineon Technologies AG]
Part No. BGB540
OCR Text ...atures * * * * * * Gms= 18dB at 1.8GHz Small SOT343 package Current easy adjustable by an external resistor Open collector output Typical su...5 80 8 1.2 0.7 250 150 -65 ... +150 -65 ... +150 300 Unit V mA mA V mA mW C C C K/W Notes: For de...
Description Active Biased RF Transistor
Silicon MMICs - Mirror-Biased BFP540 in SIEGET 45 Technology, Icmax = 80mA, SOT343

File Size 95.55K  /  10 Page

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    MGF7124A 7124A

Mitsubishi Electric Semiconductor
Mitsubishi Electric Corporation
Part No. MGF7124A 7124A
OCR Text 1.9ghz BAND AMPLIFIER MMIC DESCRIPTION MGF7124A is a monolithic microwave integrated circuit for use in 1.9ghz band power amplifiers. ...5.8x12.2x1.8mm * Light weight * Surface mount package * Low supply voltage operation VD=4.8V * Enabl...
Description From old datasheet system
1.9ghz BAND AMPLIFIER MMIC

File Size 8.30K  /  1 Page

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    MGF7170AC

Mitsubishi Electric Corporation
Mitsubishi Electric Semiconductor
Part No. MGF7170AC
OCR Text ...output power : Po=28dBm typ. @f=1.715~1.78GHz -Low distortion : ACP=-46dBc max. @Po=28dBm -High efficiency : Id=520mA typ. @Po=28dBm -Small ...5 0 -12 Fin=1750MHz Vd1=Vd2=3.0V Vg=2.6V CDMA evaluation Pin vs. Pout,Efficiency for CDMA 35 ...
Description UHF BAND GaAs POWER AMPLIFIER

File Size 301.85K  /  16 Page

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For 1.5 1.9ghz Found Datasheets File :: 953    Search Time::4.203ms    
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