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  0.0049 Datasheet PDF File

For 0.0049 Found Datasheets File :: 3349    Search Time::1.516ms    
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    Sanyo
Part No. 2SB1471 2SD2223
OCR Text ...CE(sat) VBE(sat) VCB=(-)40V, IE=0 VEB=(-)5V, IC=0 VCE=(-)2V, IC=(-)2A VCE=(-)5V, IC=(-)2A IC=(-)2A, IB=(-)4mA IC=(-)2A, IB=(-)4mA 2000 5000 20 0.9 (-1.0) (-)2.0 (-)1.5 MHz V V V Conditions Ratings min typ max (-)0.1 (-)3.0 Unit mA mA Any...
Description NPN Epitaxial Planar Silicon Transistors Driver Applications
PNP/NPN Epitaxial Planar Silicon Transistors

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    hitachi
Part No. 2SB1494
OCR Text ...-- -- -- -- -10 -10 20000 -- -2.0 -3.5 -3.0 -4.5 V V Unit V V V V A Test conditions I C = -0.1 mA, IE = 0 I C = -25 mA, RBE = I C = -200 mA, RBE = I E = -50 mA, IC = 0 VCB = -100 V, IE = 0 VCE = -100 V, RBE = VCE = -4 V, IC = -12 A*1 VCE...
Description Silicon PNP Triple Diffused
From old datasheet system

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    2SB1732

ROHM[Rohm]
Part No. 2SB1732
OCR Text ... dimensions (Unit : mm) (2) 0.3 0.2 1.7 2.1 Features 1) A collector current is large. 2) Collector saturation voltage is low. VCE(sat) -200mV at IC = -500mA / IB = -25mA (1) 0.2 0.85Max. 0.17 0~0.1 0.15Max. ...
Description Genera purpose amplification(−12V, −1.5A)
Genera purpose amplification(−12V −1.5A)
From old datasheet system
Genera purpose amplification(-12V, -1.5A)

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    Matsshita / Panasonic
Part No. 2SC3611 0235
OCR Text 0+0.5 -0.1 3.20.2 I Absolute Maximum Ratings TC = 25C 0.750.1 Parameter Collector to base voltage Collector to emitter voltage Symbol VCBO VCER VCEO VEBO ICP IC PC Tj Tstg Rating 110 100 50 3.5 300 150 1.2 4.0 * 150 -55 to +...
Description Power Transistors
From old datasheet system

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    Matsshita / Panasonic
Part No. 2SC3743 0642
OCR Text 0.70.1 10.00.2 5.50.2 2.70.2 4.20.2 Unit: mm 4.20.2 s Features q q q q High-speed switching Wide area of safe operation (ASO) with high breakdown voltage Satisfactory linearity of foward current transfer ratio hFE Full-pack packa...
Description Power Transistors
From old datasheet system

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    Sanyo
Part No. 2SC3953 0099 2SA1538
OCR Text ...:mm 2042B [2SA1538/2SC3953] 8.0 1.0 Features * High fT : fT=400MHz. * High breakdown voltage : VCEO=120Vmin. * Small reverse transfer capacitance and excellent HF response : Cre=1.7pF/NPN, 2.2pF/PNP. * Complementary PNP and NPN types....
Description 0.2 A, 120 V, NPN, Si, POWER TRANSISTOR
PNP/NPN Epitaxial Planar Silicon Transistors
From old datasheet system
PNP Epitaxial Planar Silicon Transistors High-Definition CRT Display Video Output Applications
NPN Epitaxial Planar Silicon Transistors High-Definition CRT Display Video Output Applications

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    Matsshita / Panasonic
Part No. 2SC3975 0647
OCR Text ... voltage high-speed switching (0.7) 15.00.3 11.00.2 5.00.2 (3.2) I Features * High-speed switching * High collector to base voltage VCBO * Wide area of safe operation (ASO) * Satisfactory linearity of forward current transfer rat...
Description Power Transistors
From old datasheet system

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    Matsshita / Panasonic
Part No. 2SC3979A 2SC3979 0645 2SC3979/2SC3979A
OCR Text ...the heat sink with one screw 0.70.1 10.00.2 5.50.2 4.20.2 2.70.2 7.50.2 16.70.3 3.10.1 4.20.2 Solder Dip (4.0) 1.40.1 1.30.2 0.5+0.2 -0.1 14.00.5 0.80.1 2.540.3 I Absolute Maximum Ratings TC = 25C ...
Description SC70/µDFN, Single/Dual Low-Voltage, Low-Power µP Reset Circuits
From old datasheet system
Power Transistors

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    Sanyo
Part No. 2SC4188
OCR Text ... VCE(sat) VBE(sat) VCB=150V, IE=0 VEB=4V, IC=0 VCE=10V, IC=10mA VCE=30V, IC=10mA VCB=30V, f=1MHz VCB=30V, f=1MHz IC=20mA, IB=2mA IC=20mA, IB=2mA 200 200 5 40* 150 1.8 1.3 0.6 1.0 Conditions Ratings min typ max 0.1 0.1 320* MHz pF pF V V V V...
Description NPN Epitaxial Planar Silicon Transistor Ultrahigh-Definition CRT Display Video Output Applications

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    hitachi
Part No. 2SC4308
OCR Text ...1.5 -- Typ -- -- -- -- -- 2.5 4.0 Max -- -- 1 10 200 -- -- GHz pF Unit V V A A Test conditions I C = 100 A, IE = 0 I C = 1 mA, RBE = VCB = 25 V, IE = 0 VEB = 3 V, IE = 0 VCE = 5 V, IC = 50 mA VCE = 5 V, IC = 50 mA VCB = 10 V, IE = 0, f = 1...
Description Silicon NPN Epitaxial Planar
From old datasheet system

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