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TT electronics Semelab Limited
Semelab PLC
SEME-LAB[Seme LAB]
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| Part No. |
D1005 D1005UK
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| OCR Text |
...6 dB MINIMUM
APPLICATIONS
* hf/Vhf COMMUNICATIONS from 1 MHz to 175 MHz
ABSOLUTE MAXIMUM RATINGS (Tcase = 25C unless otherwise stated)
PD BVDSS BVGSS ID(sat) Tstg Tj Power Dissipation Drain - Source Breakdown Voltage Gate - Source B... |
| Description |
Gold Metallised Multi-Purpose Silicon DMOS RF FET(80W-28V-175MHz,Single Ended)(镀金多用DMOS射频硅场效应80W-28V-175MHz,单端))
METAL GATE RF SILICON FET
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| File Size |
36.10K /
4 Page |
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it Online |
Download Datasheet
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SEME-LAB[Seme LAB]
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| Part No. |
D1006UK
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| OCR Text |
...01 0.005 REF
APPLICATIONS
* hf/Vhf/Uhf COMMUNICATIONS from 1 MHz to 200 MHz
ABSOLUTE MAXIMUM RATINGS (Tcase = 25C unless otherwise stated)
PD BVDSS BVGSS ID(sat) Tstg Tj Power Dissipation Drain - Source Breakdown Voltage Gate - Sour... |
| Description |
Gold Metallised Multi-Purpose Silicon DMOS RF FET(120W-28V-175MHz,Single Ended)(镀金多用DMOS射频硅场效应120W-28V-175MHz,单端))
METAL GATE RF SILICON FET
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| File Size |
59.19K /
4 Page |
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it Online |
Download Datasheet |
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TT electronics Semelab Limited
SEME-LAB[Seme LAB]
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| Part No. |
D1007UK
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| OCR Text |
...3 dB MINIMUM
APPLICATIONS
* hf/Vhf/Uhf COMMUNICATIONS from 1 MHz to 1 GHz
ABSOLUTE MAXIMUM RATINGS (Tcase = 25C unless otherwise stated)
PD BVDSS BVGSS ID(sat) Tstg Tj * Per Side Semelab plc. Power Dissipation Drain - Source Breakdo... |
| Description |
Gold Metallised Multi-Purpose Silicon DMOS RF FET(40W-28V-500MHz,Push-Pull)(镀金多用DMOS射频硅场效应40W-28V-500MHz,推挽)
METAL GATE RF SILICON FET
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| File Size |
50.54K /
4 Page |
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it Online |
Download Datasheet |
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SGS Thomson Microelectronics
STMICROELECTRONICS[STMicroelectronics]
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| Part No. |
SD1411 2795
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| OCR Text |
hf SSB APPLICATIONS
.30 .40 .I .COMMON .GOLD .P
MHz VOLTS MD -30 dB EMITTER METALLIZATION OUT = 200 W MIN. WITH 16 dB GAIN
.400 x .42...Vhf frequency bands. This device utilizes gold metallized die with diffused emitter resistors to ach... |
| Description |
hf SSB APPLICATIONS RF & MICROWAVE TRANSISTORS
RF & MICROWAVE TRANSISTORS hf SSB APPLICATIONS
From old datasheet system
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| File Size |
51.82K /
3 Page |
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it Online |
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SEME-LAB[Seme LAB]
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| Part No. |
D2211 D2211UK
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| OCR Text |
... * HIGH GAIN
APPLICATIONS
* hf/Vhf/Uhf COMMUNICATIONS from 1 MHz to 2 GHz
ABSOLUTE MAXIMUM RATINGS (Tcase = 25C unless otherwise stated)
PD BVDSS BVGSS ID(sat) Tstg Tj Semelab plc. Power Dissipation Drain - Source Breakdown Voltage ... |
| Description |
METAL GATE RF SILICON FET
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| File Size |
19.70K /
2 Page |
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it Online |
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Motorola Semiconductor Products Inc
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| Part No. |
MC145170DT2 MC145170-2
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| OCR Text |
...able of direct usage in the MF, hf, and Vhf bands. A special architecture makes this PLL easy to program. Either a bit- or byte-oriented format may be used. Due to the patented BitGrabber registers, no address/steering bits are required for... |
| Description |
MC145170-2 Technical Data Sheet: PLL Frequency Synthesizer with Serial Interface
From old datasheet system
FREQUENCY SYNTHESIZER,TSSOP,16PIN,PLASTIC
CMOS PLL FREQUENCY SYNTHESIZER WITH SERIAL INTERFACE
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| File Size |
473.12K /
26 Page |
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it Online |
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Advanced Semiconductor, Inc.
ASI[Advanced Semiconductor]
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| Part No. |
AHV9501-15 AHV950115
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| OCR Text |
...licon Tuning Varactor Diode for hf to Vhf operation.
FEATURES INCLUDE:
* Octave tunning from 4 to 20 V * Ultra high Q * Linnear frequency performance versus voltage
MAXIMUM RATINGS
IF VR PDISS TJ TSTG 50 mA 22 V 280 mW @ TC = 25 C -... |
| Description |
SILICON VARACTOR DIODE hf-Vhf BAND, 200 pF, 22 V, SILICON, VARIABLE CAPACITANCE DIODE
From old datasheet system
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| File Size |
12.72K /
1 Page |
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it Online |
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FAIRCHILD[Fairchild Semiconductor]
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| Part No. |
2N5245 2N5245L99Z
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| OCR Text |
hf/Vhf mixer/amplifier and applications where process 50is not adequate. Sufficient gain and low noise for sensitive receivers. * Sourced from process 90. TO-92
1
1. Gate 2. Source 3. Drain
Absolute Maximum Ratings* Ta=25C unless oth... |
| Description |
N-Channel RF Amplifier
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| File Size |
23.99K /
3 Page |
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it Online |
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Price and Availability
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