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| Part No. |
K4S161622D-TC55
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| OCR Text |
...u f f e r i / o c o n t r o l column decoder latency & burst length programming register a d d r e s s r e g i s t e r r o w b u f f e r r e f r e s h c o u n t e r r o w d e c o d e r c o l . b u f f e r l r a s l c b r lcke lr... |
| Description |
1M X 16 SYNCHRONOUS DRAM, 5 ns, PDSO50
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| File Size |
1,135.05K /
43 Page |
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it Online |
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INTEGRATED SILICON SOLUTION INC
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| Part No. |
IS42VM16400K-6BLI
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| OCR Text |
... address row address : ra0~ra11 column address : ca0~ca7 auto precharge : a10 /ras, /cas, /we row address strobe, column address strobe, write enable ras, cas and we define the operation . refer function truth table for details . ldqm,udqm... |
| Description |
SYNCHRONOUS DRAM, PBGA54
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| File Size |
1,025.32K /
33 Page |
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it Online |
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HYNIX SEMICONDUCTOR INC
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| Part No. |
HYM71V16655ALT8M-8
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| OCR Text |
..., /cas, /we row address strobe, column address strobe, write enable /ras, /cas and /we define the operation refer function truth table for details dqm0~dqm7 data input/output mask controls output buffers in read mode and masks input data i... |
| Description |
16M X 64 SYNCHRONOUS DRAM MODULE, 6 ns, DMA168
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| File Size |
233.13K /
14 Page |
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it Online |
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| Part No. |
GM71V17400CT-6 GM71V17400CCL
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| OCR Text |
.../data-output row address strobe column address strobe read/write enable output enable power (+3.3v) ground ordering information type no. access time package gm71v(s)17400cj/clj-5 gm71v(s)17400cj/clj-6 gm71v(s)17400cj/clj-7 50 ns 60ns 70ns ... |
| Description |
x4 Fast Page Mode DRAM
4Mx4|3.3V|2K|5/6/7|FP/EDO DRAM - 16M
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| File Size |
104.91K /
10 Page |
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it Online |
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HYNIX SEMICONDUCTOR INC
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| Part No. |
HY5DU28822LT-K
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| OCR Text |
...address row address : a0 ~ a11, column address : a0 ~ a9, ap flag : a10 ras , cas , we row address strobe, column address strobe, write enable ras , cas and we define the operations. refer function truth table for details. dm write ... |
| Description |
16M X 8 DDR DRAM, PDSO66
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| File Size |
84.91K /
10 Page |
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it Online |
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NANYA TECHNOLOGY CORP
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| Part No. |
NT5DS16M16BW-6K
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| OCR Text |
...lect the bank and the starting column location for the burst access. the ddr sdram provides for programmable read or write burst lengths of 2, 4, or 8 locations. an auto precharge func- tion may be enabled to provide a self-timed row prec... |
| Description |
16M X 16 DDR DRAM, 0.7 ns, PBGA60
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| File Size |
1,341.90K /
80 Page |
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it Online |
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Alliance Semiconductor
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| Part No. |
AS4C4M16S-6TIN
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| OCR Text |
...cell a rray ( b an k #b) column de c o d e r a0 a9 a11 b a 0 b a 1 address buffer refresh counter 2 ... |
| Description |
64Mb / 4M x 16 bit Synchronous DRAM
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| File Size |
3,342.14K /
53 Page |
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it Online |
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Price and Availability
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