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  800a Datasheet PDF File

For 800a Found Datasheets File :: 1634    Search Time::2.062ms    
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    PG-TO220-3-FP IKA08N65F5

Infineon Technologies AG
Part No. PG-TO220-3-FP IKA08N65F5
OCR Text ...400v, i f =4.0a, di f /dt =800a/s diode reverse recovery time t rr - 27 - ns diode reverse recovery charge q rr - 0.10 - c diode peak reverse recovery current i rrm - 6.2 - a diode peak rate of fall of reverse recoverycurrentduring ...
Description High speed 5 FAST IGBT in TRENCHSTOP 5 technology copacked with RAPID 1 fast and soft anti parallel diode

File Size 2,450.43K  /  17 Page

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    POWEREX[Powerex Power Semiconductors]
Part No. CM400HU-24H
OCR Text ... Operation IE = 400A, diE/dt = -800a/s IE = 400A, diE/dt = -800a/s VCE = 10V, VGE = 0V Test Conditions Min. - - - - - - - - - Typ. - - - - - - - - 2.2 Max. 60 21 12 250 350 350 350 300 - Units nf nf nf ns ns ns ns ns C Diode Reverse Reco...
Description Single IGBTMOD 400 Amperes/1200 Volts

File Size 55.48K  /  4 Page

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    Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No. CM400HU-24H
OCR Text ... Operation IE = 400A, diE/dt = -800a/s IE = 400A, diE/dt = -800a/s VCE = 10V, VGE = 0V Test Conditions Min. - - - - - - - - - Typ. - - - - - - - - 2.2 Max. 60 21 12 250 350 350 350 300 - Units nF nF nF ns ns ns ns ns C Diode Reverse Reco...
Description IGBT Modules:1200V
HIGH POWER SWITCHING USE INSULATED TYPE

File Size 43.70K  /  4 Page

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    Powerex Power Semicondu...
POWEREX[Powerex Power Semiconductors]
Part No. CM400HA-34H
OCR Text ...tf trr Qrr IE = 600A, diE/dt = -800a/s IE = 600A, diE/dt = -800a/s VCC = 750V, IC = 400A, VGE1 = VGE2 = 15V, RG = 10 VGE = 0V, VCE = 10V Test Conditions Min. - - - - - - - - - Typ. - - - - - - - - 7.0 Max. 85 20 15 900 1500 1500 800 400 - U...
Description    Single IGBTMOD 400 Amperes/1700 Volts

File Size 56.62K  /  4 Page

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    Mitsubishi Electric Sem...
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No. CM400HA-34H
OCR Text ...tf trr Qrr IE = 400A, diE/dt = -800a/s IE = 400A, diE/dt = -800a/s VCC = 750V, IC = 400A, VGE1 = VGE2 = 15V, RG = 10 VGE = 0V, VCE = 10V Test Conditions Min. - - - - - - - - - Typ. - - - - - - - - 7.0 Max. 85 20 15 900 1500 1500 800 400 - U...
Description    HIGH POWER SWITCHING USE INSULATED TYPE
IGBT Modules:1700V

File Size 47.86K  /  4 Page

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    SKIIP1092GAR170-474CTVF

SEMIKRON INTERNATIONAL
Part No. SKIIP1092GAR170-474CTVF
OCR Text ...125 c -- 4,1 m w v cesat i c = 800a, t j = 125 c -- 5,1 v v cesat i c = 800a, t j = 25 c -- 3,85 v e on + e off v cc =900/1200v, i c =1000a t j = 125 c -- 845/130 1 mj c chc per phase, ac side - 3,2 - nf l ce top, bottom - 2 - nh inve...
Description 1250 A HALF BRIDGE BASED PRPHL DRVR, XMA

File Size 103.86K  /  3 Page

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    POWEREX[Powerex Power Semiconductors]
Part No. CM400HA-28H
OCR Text ...tf trr Qrr IE = 400A, diE/dt = -800a/s IE = 400A, diE/dt = -800a/s VCC = 800V, IC = 400A, VGE1 = VGE2 = 15V, RG = 0.78 VGE = 0V, VCE = 10V, f = 1MHz Test Conditions Min. - - - - - - - - - Typ. - - - - - - - - 4.0 Max. 80 28 16 300 500 350 5...
Description Single IGBTMOD 400 Amperes/1400 Volts

File Size 55.96K  /  4 Page

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