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				Samsung semiconductor International Rectifier Intersil Corporation
Part No.	IRF9150
OCR Text	...This P-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these powe...
Description	-25A, -100V, 0.150 Ohm, P-Channel Power MOSFET
File Size	56.86K / 7 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRF9410
OCR Text	...extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET ...Gate-Source Voltage Continuous Drain Current TA = 25C TA = 70C VDS VGS ID IDM IS PD EAS IAR EAR dv/d...
Description	Power MOSFET(Vdss=30V, Rds(on)=0.030ohm)
File Size	103.18K / 7 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF9520NL IRF9520NS
OCR Text	...extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET ...Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy P...
Description	Power MOSFET(Vdss=-100V/ Rds(on)=0.48ohm/ Id=-6.8A) Power MOSFET(Vdss=-100V, Rds(on)=0.48ohm, Id=-6.8A) Power MOSFET(Vdss=-100V Rds(on)=0.48ohm Id=-6.8A)
File Size	151.66K / 10 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF9520N
OCR Text	...extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET ...Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy P...
Description	Power MOSFET(Vdss=-100V Rds(on)=0.48ohm Id=-6.8A) Power MOSFET(Vdss=-100V, Rds(on)=0.48ohm, Id=-6.8A)
File Size	91.94K / 8 Page	View it Online	Download Datasheet

				INTERSIL[Intersil Corporation]
Part No.	IRF9520 FN2281
OCR Text	... are P-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high power bipolar switching transistors ...
Description	6A, 100V, 0.600 Ohm, P-Channel Power MOSFET(6A, 100V, 0.600 惟, P娌?????MOS?烘?搴??) From old datasheet system 6A 100V 0.600 Ohm P-Channel Power MOSFET 6A/ 100V/ 0.600 Ohm/ P-Channel Power MOSFET
File Size	57.36K / 7 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF9530NL IRF9530NS IRF9530NSTRR
OCR Text	...extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET ...Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy P...
Description	Power MOSFET(Vdss=-100V/ Rds(on)=0.20ohm/ Id=-14A) Power MOSFET(Vdss=-100V, Rds(on)=0.20ohm, Id=-14A)
File Size	169.24K / 10 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF9530N
OCR Text	...extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET ...Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy P...
Description	Power MOSFET(Vdss=-100V, Rds(on)=0.20ohm, Id=-14A)
File Size	109.25K / 8 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF9540NL IRF9540NS IRF9540NSTRL
OCR Text	...extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET ...Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy P...
Description	Power MOSFET(Vdss=-100V/ Rds(on)=0.117ohm/ Id=-23A) Power MOSFET(Vdss=-100V, Rds(on)=0.117ohm, Id=-23A)
File Size	183.18K / 10 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF9540N IRF9540 IRF9540NPBF
OCR Text	...extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET ...Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy P...
Description	-100V Single P-Channel HEXFET Power MOSFET in a TO-220AB package Power MOSFET(Vdss=-100V, Rds(on)=0.117ohm, Id=-23A) Power MOSFET(Vdss=-100V/ Rds(on)=0.117ohm/ Id=-23A)
File Size	121.23K / 8 Page	View it Online	Download Datasheet

				Intersil, Corp. INTERSIL[Intersil Corporation]
Part No.	IRF9540 RF1S9540SM FN2282
OCR Text	... are P-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of thes...
Description	19 A, 100 V, 0.2 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB 19A, 100V, 0.200 Ohm, P-Channel Power MOSFETs 19 A, 100 V, 0.2 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-263AB 19A/ 100V/ 0.200 Ohm/ P-Channel Power MOSFETs From old datasheet system
File Size	59.17K / 7 Page	View it Online	Download Datasheet

For silicon-gate Found Datasheets File :: 33550 Search Time::3.844ms
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