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				PROMOS TECHNOLOGIES INC
Part No.	V58C2256164SCE5B
OCR Text	... command power down mode auto refresh and self refresh refresh interval: 8192 cycles/64 ms available in 66-pin 400 mil tsop or 60 ball fbga sstl-2 compatible i/os double data rate (ddr) bidirectional data strobe (dqs) for input and o...
Description	16M X 16 DDR DRAM, 0.65 ns, PDSO66
File Size	917.36K / 61 Page	View it Online	Download Datasheet


Part No.	MT48LC8M16TG-8ITG MT48V8M16TG-8G
OCR Text	... ? temperature compensated self refresh (tcsr) ? fully synchronous; all signals registered on positive edge of system clock ? internal pipelined operat ion; column address can be changed every clock cycle ? internal banks for hiding row a...
Description	8M X 16 SYNCHRONOUS DRAM, 7 ns, PDSO54
File Size	6,168.33K / 69 Page	View it Online	Download Datasheet

				INTEGRATED SILICON SOLUTION INC
Part No.	IS42SM32400E-75EBLI
OCR Text	...quential and interleave ? auto refresh (cbr) ? tcsr (temperature compensated self refresh) ? pasr (partial arrays self refresh): 1/16, 1/8, ? 1/4, 1/2, and full deep power down mode (dpd) ? driver strength control (ds): 1/4, 1/2, an...
Description	4M X 32 SYNCHRONOUS DRAM, 5.4 ns, PBGA90
File Size	764.69K / 26 Page	View it Online	Download Datasheet

				Qimonda AG
Part No.	HYS72T64001HP
OCR Text	... (4 & 8) and burst type ? auto refresh (cbr) and self refresh ? average refresh period 7.8 s at a t lower than 85 c, 3.9 s between 85 c and 95 c ? programmable self refres h rate via emrs2 setting ? all inputs and outputs sstl_18 com...
Description	240-Pin Registered DDR2 SDRAM Modules
File Size	1,025.25K / 53 Page	View it Online	Download Datasheet

				Samsung Electronic SAMSUNG[Samsung semiconductor]
Part No.	K4F151611 K4F151611D K4F151612D K4F171611D K4F171612D K4F151612D-J K4F151611D-T K4F151612D-T K4F171612D-J
OCR Text	...upply voltage (+5.0V or +3.3V), refresh cycle (1K Ref. or 4K Ref.), access time (-50 or -60), power consumption(Normal or Low power) and package type(SOJ or TSOP-II) are optional features of this family. All of this family have CASbefore-RA...
Description	1M x 16 bit CMOS dynamic RAM with fast page mode. Supply voltage 3.3V, 4K refresh cycle. 1M x 16 bit CMOS dynamic RAM with fast page mode. Supply voltage 5V, 1K refresh cycle. 1M x 16Bit CMOS Dynamic RAM with Fast Page Mode 1M x 16 bit CMOS dynamic RAM with fast page mode. Supply voltage 3.3V, 1K refresh cycle.
File Size	525.70K / 34 Page	View it Online	Download Datasheet


Part No.	K4E151611C-TC50
OCR Text	...upply voltage (+5.0v or +3.3v), refresh cycle (1k ref. or 4k ref.), access time (-45, -5 0 or -6 0 ), power consumption(normal or low power) and package type(soj or tsop-ii) are optional features of this family. all of this family have ca...
Description	1M X 16 EDO DRAM, 50 ns, PDSO44
File Size	558.18K / 35 Page	View it Online	Download Datasheet

				QIMONDA AG
Part No.	HYB18TC256800AF-3.7
OCR Text	...or read and write bursts ? auto-refresh, self-refresh and power saving power- down modes ? average refresh period 7.8 s at a t case lower than 85 c, 3.9 s between 85 c and 95 c ? programmable self refres h rate via emrs2 setting ? pr...
Description	32M X 8 DDR DRAM, 0.5 ns, PBGA60
File Size	1,885.92K / 60 Page	View it Online	Download Datasheet

				Samsung Electronic SAMSUNG[Samsung semiconductor]
Part No.	KM416C4000B KM416C4100B KM416C4000BS-6 KM416C4000BS-5
OCR Text	...mory cells within the same row. refresh cycle(4K Ref. or 8K Ref.), access time (-45, -5 or -6) are optional features of this family. All of this family have CAS-before-RAS refresh, RAS-only refresh and Hidden refresh capabilities. This 4Mx1...
Description	4M x 16Bit CMOS dynamic RAM with fast page mode, 5V, 8K refresh, 50ns 4M x 16Bit CMOS dynamic RAM with fast page mode, 5V, 8K refresh, 60ns
File Size	826.10K / 35 Page	View it Online	Download Datasheet

				SAMSUNG[Samsung semiconductor] Samsung Electronic
Part No.	KM416C4000C KM416C4100C KM416C4000CS-5
OCR Text	...mory cells within the same row. refresh cycle(4K Ref. or 8K Ref.), access time ( -5 or -6) are optional features of this family. All of this family have CAS-before-RAS refresh, RAS-only refresh and Hidden refresh capabilities. This 4Mx16 Fa...
Description	4M x 16Bit CMOS dynamic RAM with fast page mode, 5V, 8K refresh, 50ns
File Size	898.34K / 35 Page	View it Online	Download Datasheet

				SAMSUNG[Samsung semiconductor] Samsung Electronic
Part No.	KM416C4004C KM416C4104C KM416C4004CS-5
OCR Text	...mory cells within the same row. refresh cycle(4K Ref. or 8K Ref.), access time (-5 or -6) are optional features of this family. All of this family have CAS-before-RAS refresh, RAS-only refresh and Hidden refresh capabilities. This 4Mx16 EDO...
Description	4M x 16Bit CMOS dynamic RAM with extended data out, 5V, 8K refresh, 50ns
File Size	943.13K / 36 Page	View it Online	Download Datasheet

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