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80510 OSO5G M56694FP 17000 ZR36748A B1215 AD536AJH B41456
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  enhancementmode Datasheet PDF File

For enhancementmode Found Datasheets File :: 96    Search Time::2.297ms    
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    Motorola, Inc.
Part No. MRF1511T1
OCR Text enhancementmode lateral mosfet the mrf1511t1 is designed for broadband commercial and industrial applications at frequencies to 175 mhz. the high gain and broadband performance of this device makes it ideal for largesignal, common source am...
Description RF Power MOSFETs(RF功率MOS场效应管)

File Size 229.69K  /  12 Page

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    Motorola, Inc.
Part No. MRF6522-60
OCR Text enhancementmode lateral mosfet designed for broadband commercial and industrial applications at frequen- cies up to 1.0 ghz and specified for the gsm 925 960 mhz band. the high gain and broadband performance of these devices makes them ide...
Description RF MOSFETS(RF MOS场效应管)

File Size 189.33K  /  12 Page

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    MMFT2N25E-D

ON Semiconductor
Part No. MMFT2N25E-D
OCR Text enhancementmode silicon gate this advanced high voltage tmos efet is designed to withstand high energy in the avalanche mode and switch efficiently. this new high energy device also offers a draintosource diode with fast recovery time. desi...
Description TMOS E-FET High Energy Power FET N-Channel Enhancement-Mode Silicon Gate

File Size 142.45K  /  6 Page

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    MGP11N60ED-D

ON Semiconductor
Part No. MGP11N60ED-D
OCR Text enhancementmode silicon gate this insulated gate bipolar transistor (igbt) is copackaged with a soft recovery ultrafast rectifier and uses an advanced termination scheme to provide an enhanced and reliable high voltageblocking capability. i...
Description Insulated Gate Bipolar Transistor with Anti-Parallel Diode N-Channel Enhancement-Mode Silicon Gate

File Size 122.69K  /  6 Page

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    MGP4N60ED-D

ON Semiconductor
Part No. MGP4N60ED-D
OCR Text enhancementmode silicon gate this insulated gate bipolar transistor (igbt) is copackaged with a soft recovery ultrafast rectifier and uses an advanced termination scheme to provide an enhanced and reliable high voltageblocking capability. i...
Description Insulated Gate Bipolar Transistor with Anti-Parallel Diode N-Channel Enhancement-Mode Silicon Gate

File Size 122.50K  /  6 Page

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    MGP7N60ED-D

ON Semiconductor
Part No. MGP7N60ED-D
OCR Text enhancementmode silicon gate this insulated gate bipolar transistor (igbt) is copackaged with a soft recovery ultrafast rectifier and uses an advanced termination scheme to provide an enhanced and reliable high voltageblocking capability. i...
Description Insulated Gate Bipolar Transistor with Anti-Parallel Diode N-Channel Enhancement-Mode Silicon Gate

File Size 120.86K  /  6 Page

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    MGW14N60ED-D

ON Semiconductor
Part No. MGW14N60ED-D
OCR Text enhancementmode silicon gate this insulated gate bipolar transistor (igbt) is copackaged with a soft recovery ultrafast rectifier and uses an advanced termination scheme to provide an enhanced and reliable high voltageblocking capability. i...
Description Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate

File Size 124.38K  /  6 Page

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    MGW21N60ED-D

ON Semiconductor
Part No. MGW21N60ED-D
OCR Text enhancementmode silicon gate this insulated gate bipolar transistor (igbt) is copackaged with a soft recovery ultrafast rectifier and uses an advanced termination scheme to provide an enhanced and reliable high voltageblocking capability. i...
Description Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate

File Size 127.43K  /  6 Page

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    NTP30N20-D

ON Semiconductor
Part No. NTP30N20-D
OCR Text ...fet 30 amps, 200 volts nchannel enhancementmode to220 features ? sourcetodrain diode recovery time comparable to a discrete fast recovery diode ? avalanche energy specified ? i dss and r ds(on) specified at elevated temperature typical ap...
Description Power MOSFET 30 Amps, 200 VoltsN-Channel Enhancement-Mode TO-220

File Size 74.50K  /  8 Page

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    Motorola
Part No. TE53N50E
OCR Text ... nchannel enhancementmode silicon gate this advanced high voltage tmos efet is designed to withstand high energy in the avalanche mode and switch efficiently. this new high energy device also offers a draintosource dio...
Description Search --To MTE53N50E

File Size 164.67K  /  8 Page

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