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2004A 200BZ 121SV5S0 394J250 76633 TDA7050 K4H5108 2062S
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  150-200 Datasheet PDF File

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    NXP Semiconductors N.V.
Part No. BLF7G15LS-200
OCR Text ...t stg storage temperature ? 65 +150 ?c t j junction temperature - 200 ?c table 5. thermal characteristics symbol parameter conditions typ unit r th(j-c) thermal resistance from junction to case t case =80 ?c; p l =50w; v ds =28v; i dq = 16...
Description Power LDMOS transistor

File Size 95.74K  /  11 Page

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    GS881E18AD-200 GS881E18AD-200I GS881E18AD-200IT GS881E18AD-200T GS881E18AD-225I GS881E18AD-225IT GS881E18AD-225T GS881E1

GSI[GSI Technology]
Part No. GS881E18AD-200 GS881E18AD-200I GS881E18AD-200IT GS881E18AD-200T GS881E18AD-225I GS881E18AD-225IT GS881E18AD-225T GS881E18AD-250 GS881E18AD-250I GS881E18AD-250IT GS881E18AD-250T GS881E36AT-250T GS881E18 GS881E18AD-133 GS881E18AD-133I GS881E18AD-133IT GS881E18AD-133T GS881E18AD-150 GS881E18AD-150I GS881E18AD-150IT GS881E18AD-150T GS881E18AD-166 GS881E18AD-166I GS881E18AD-166IT GS881E18AD-166T GS881E18AD-225 GS881E18AT-133 GS881E18AT-133I GS881E18AT-133IT GS881E18AT-133T GS881E18AT-150 GS881E18AT-150I GS881E18AT-150IT GS881E18AT-150T GS881E18AT-166 GS881E18AT-166I GS881E18AT-166IT GS881E18AT-166T GS881E18AT-200 GS881E18AT-200I GS881E18AT-200IT GS881E18AT-200T GS881E18AT-225 GS881E18AT-225I GS881E18AT-225IT GS881E18AT-225T GS881E18AT-250 GS881E18AT-250I GS881E18AT-250IT GS881E18AT-250T GS881E32AD-133 GS881E32AD-133I GS881E32AD-133IT GS881E32AD-133T GS881E32AD-150 GS881E32AD-150I GS881E32AD-150IT GS881E32AD-150T GS881E32AD-166 GS881E32AD-166I GS881E32AD-166IT GS881E32AD-166T GS881E32AD-200 GS881E32AD-200I GS881E32AD-200IT GS881E32AD-200T GS881E32AD-225 GS881E32AD-225I GS881E32AD-225IT GS881E32AD-225T GS881E32AD-250 GS881E32AD-250I GS881E32AD-250IT GS881E32AD-250T GS881E36AD-133 GS881E36
OCR Text ...H J K L M N P R 1.0 10. 1.0 150.0 14. A 0.450.05 0.25 C 1.0 1.0 0.15 C B 0.20(4 130.0 (0.26 0.25~0.4 1.20 ...200 GS881E18AD-166 GS881E18AD-150 GS881E18AD-133 GS881E32AD-250 GS881E32AD-225 GS881E32AD-200 GS881E...
Description 512K x 18, 256K x 36 9Mb Synchronous Burst SRAMs

File Size 647.70K  /  37 Page

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    BY229-200 BY229-800 BY229 BY229-400 BY229-600 BY229SERIES BY229-800/B BY229-200/B BY229-600/B

NXP Semiconductors N.V.
Philips Semiconductors
Part No. BY229-200 BY229-800 BY229 BY229-400 BY229-600 BY229SERIES BY229-800/B BY229-200/B BY229-600/B
OCR Text ...DITIONS BY229 MIN. -200 200 200 150 150 MAX. -400 400 400 300 300 8 7 11 16 60 66 -600 600 600 500 500 -800 800 800 600 600 UNIT V V V V A A A A A A IF(RMS) IFRM IFSM I2t Tstg Tj RMS forward current Repetitive peak forward current ...
Description Rectifier diodes fast, soft-recovery 8 A, 600 V, SILICON, RECTIFIER DIODE, TO-220AC
DIODE FAST RECOVERY 1ST
HEX SCHMITT inverter
3 to 8 line decoder
Rectifier diodes fast, soft-recovery(快速,软恢复整流二极管)
Octal bus buffer with 3 state outputs (inverted)
Rectifier diodes fast/ soft-recovery

File Size 48.77K  /  6 Page

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    D161-200 D161-200X

Naina Semiconductor ltd.
Part No. D161-200 D161-200X
OCR Text ...aximum avg. forward current @ t 150 o c v fm maximum peak forward voltage drop @ rated i f(av) i fsm maximum peak one cycle (non- re...200 40 400 60 600 200ns(r) 80 800 100 1000 120 1200 140 1400 160 1600 em...
Description Standard Recovery Diodes (Stud and Flat Base Type)

File Size 101.55K  /  2 Page

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    ST Microelectronics
Part No. BYV255V-200
OCR Text ...) rms forward current per diode 150 a i f(av) average forward current d = 0.5 tc=110c per diode 100 a i fsm surge non repetitive forward cur...200 v isotop is a trademark of stmicroelectronics. k2 a2 a1 k1 byv255v 2/5 symbol test conditions ...
Description HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES

File Size 232.07K  /  5 Page

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    IHV-20-200 IHV-28-60

Vishay Siliconix
Part No. IHV-20-200 IHV-28-60
OCR Text ...500 IHV-20-200 IHV-28-60 IHV-30-150 IHV-40-39 IHV-45-92 IHV-50-50 SELFIND.* DCR RATED RESONANT at 1 kHz TOL. MAX. CURRENT FREQ. MIN. (H) (Ohms) (Max. Amps) (MHz) 500 200 60 150 39 92 50 10 % 10 % 10 % 10 % 10 % 10 % 10 % 0.8 1.2 1.9 ...
Description Filter Inductors, High Current

File Size 80.54K  /  3 Page

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    STMicro
Part No. BYW77PI-200 BYW77P
OCR Text ... Value 50 25 25 500 - 40 to + 150 - 40 to + 150 Unit A A Surge non repetitive forward current Storage and junction temperature range...200 Unit V August 1998 Ed : 2C 1/5 BYW77P/PI-200 THERMAL RESISTANCE Symbol Rth (j-c)...
Description HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES

File Size 72.65K  /  6 Page

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    BYW77P-200 2966 BYW77PI-200RG BYW77

STMicroelectronics
ST Microelectronics
Part No. BYW77P-200 2966 BYW77PI-200RG BYW77
OCR Text ... Value 50 25 25 500 - 40 to + 150 - 40 to + 150 Unit A A IFSM Tstg Tj Surge non repetitive forward current Storage and junction t...200 Unit V October 1999 Ed : 2C 1/5 BYW77P/PI-200 THERMAL RESISTANCE Symbol Rth (j-c...
Description HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES
From old datasheet system
HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES

File Size 275.10K  /  6 Page

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    STMicro
Part No. BYW77G-200
OCR Text ...lue 200 50 25 200 310 - 40 to + 150 Unit V A A A A C August 1998 - Ed:3A 1/5 BYW77G-200 THERMAL RESISTANCE Symbol Rth (j-c) Junction to case Parameter Value 1 Unit C/W STATIC ELECTRICAL CHARACTERISTICS Symbol IR * Parameter Rev...
Description HIGH EFFICIENCY FAST RECOVERY DIODES

File Size 70.17K  /  5 Page

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