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For pipelined Found Datasheets File :: 6083 Search Time::0.844ms
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				Hynix Semiconductor, Inc. Hynix Semiconductor Inc. HYNIX[Hynix Semiconductor]
Part No.	HY57V641620HGT-6I HY57V641620HGT-7I HY57V641620HGT-55I HY57V641620HGT-5I HY57V641620HGT-HI HY57V641620HGLT-HI HY57V641620HG-I HY57V641620HGLT-5I HY57V641620HGLT-8I HY57V641620HGLT-PI HY57V641620HGLT-SI HY57V641620HGT-8I HY57V641620HGT-KI HY57V641620HGT-PI HY57V641620HGLT-KI HY57V641620HGT-SI HY57V641620HGLT-55I HY57V641620HGLT-7I HY57V641620HGT HY57V641620HGTP-7I HY57V641620HGTP-8I
OCR Text	.... The data paths are internally pipelined to achieve very high bandwidth. All input and output voltage levels are compatible with LVTTL. Programmable options include the length of pipeline (Read latency of 2 or 3), the number of consecutive...
Description	SDRAM - 64Mb 4 Banks x 1M x 16Bit Synchronous DRAM 4M X 16 SYNCHRONOUS DRAM, 6 ns, PDSO54 4 Banks x 1M x 16Bit Synchronous DRAM 4M X 16 SYNCHRONOUS DRAM, 5 ns, PDSO54 x16 SDRAM x16内存 4 Banks x 1M x 16Bit Synchronous DRAM 4M X 16 SYNCHRONOUS DRAM, 4.5 ns, PDSO54 CAP 0.01UF 50V 10% X7R SMD-0805 TR-13 PLATED-NI/SN Ceramic Multilayer Capacitor; Capacitance:10000pF; Capacitance Tolerance: /- 10 %; Working Voltage, DC:50V; Dielectric Characteristic:X7R; Package/Case:0805; Series:MLCC; Dielectric Material:Ceramic; Leaded Process Compatible:Yes CAP SMD 0805 .01UF 50V 5% CONNECTOR ACCESSORY From old datasheet system
File Size	142.41K / 12 Page	View it Online	Download Datasheet

				Hynix Semiconductor, Inc. Hynix Semiconductor Inc. HYNIX[Hynix Semiconductor]
Part No.	HY57V641620HGT-6 HY57V641620HGT-7 HY57V641620HGT-5 HY57V641620HGT-55 HY57V641620HGT-H HY57V641620HG HY57V641620HGT-P HY57V641620HGLT-P HY57V641620HGT-S HY57V641620HGT-8 HY57V641620HGT-K
OCR Text	.... The data paths are internally pipelined to achieve very high bandwidth. All input and output voltage levels are compatible with LVTTL. Programmable options include the length of pipeline (Read latency of 2 or 3), the number of consecutive...
Description	4 Banks x 1M x 16Bit Synchronous DRAM 4银行× 1米16位同步DRAM 4 Banks x 1M x 16Bit Synchronous DRAM 4M X 16 SYNCHRONOUS DRAM, 4.5 ns, PDSO54
File Size	84.91K / 12 Page	View it Online	Download Datasheet

				INTEL[Intel Corporation]
Part No.	INTEL387TMDX
OCR Text	... Cycle 3 4 1 2 Read Cycle 3 4 2 pipelined Bus Cycles 3 4 3 Bus Cycles of Mixed Type 3 4 4 BUSY and PEREQ Timing Relationship 4 0 ELECTRICAL DATA 4 1 Absolute Maximum Ratings 4 2 DC Characteristics 4 3 AC Characteristics 5 0 Intel387 TM DX M...
Description	Intel387TM DX MATH COPROCESSOR
File Size	424.10K / 41 Page	View it Online	Download Datasheet

				Intel Corporation
Part No.	INTEL387
OCR Text	...ation 5 0 BUS OPERATION 5 1 Non-pipelined Bus Cycles 5 1 1 Write Cycle 5 1 2 Read Cycle 5 2 pipelined Bus Cycles 5 3 Mixed Bus Cycles 5 4 BUSY and PEREQ Timing Relationship 6 0 PACKAGE SPECIFICATIONS 6 1 Mechanical Specifications 6 2 Therma...
Description	Intel387TM SX MATH COPROCESSOR
File Size	469.21K / 47 Page	View it Online	Download Datasheet

				Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
Part No.	K7A803600B-QC14 K7A803600B-QC16 K7A803609B K7A803609B-QC25 K7A801800 K7A801800B-QC14 K7A801800B-QC16 K7B803625 K7B803625B-QC65 K7B803625B-QC75 K7A801809B-QC25 K7A801809B K7B801825B-QC65 K7A801809B-QCI25 K7B801825B-QC75 K7D801871B-HC25
OCR Text	pipelined Burst SRAM Revision History Rev. No. 0.0 0.1 0.2 0.3 1.0 History Initial draft 1. Delete pass- through 1. Add x32 org part and industrial temperature part 1. change scan order(1) form 4T to 6T at 119BGA(x18) 1. Final spec rele...
Description	256Kx36 & 512Kx18-Bit Synchronous pipelined Burst SRAM 256Kx36 256Kx36 & 512Kx18-Bit Synchronous pipelined Burst SRAM 256Kx36 & 512Kx18 SRAM
File Size	397.77K / 18 Page	View it Online	Download Datasheet

				SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
Part No.	K7A803601M K7A801801M K7A801809B K7A803609B
OCR Text	pipelined Burst SRAM Revision History Rev. No. 0.0 0.1 History Initial draft Modify DC characteristics( Input Leakage Current test Conditions) form VDD=VSS to VDD to Max. Remove 119BGA Package Type. Change DC Characteristics. ISB value ...
Description	256Kx36 & 512Kx18 Synchronous SRAM 256Kx36 & 512Kx18-Bit Synchronous pipelined Burst SRAM 256K x 36 & 512K x 18-Bit Synchronous pipelined Burst SRAM Data Sheet
File Size	465.04K / 17 Page	View it Online	Download Datasheet

				Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor]
Part No.	K7P401822B-HC16 K7P401822B-HC20 K7P401822B-HC25 K7P403622B-HC20 K7P403622B K7P403622B-HC16 K7P403622B-HC25 K7P401822B-HC160 K7P403622B-HC200 K7P401822B-HC20T
OCR Text	pipelined SRAM 128Kx36 & 256Kx18 SRAM Revision History Rev. No. Rev. 0.0 Rev. 0.1 History - Initial Document. - Update Pin Discription. (M2=VDDQ -> M2=VDD) - Add AC characteristics. (250Mhz, 166Mhz) - Update DC CHARACTERISTICS x...
Description	SENSOR DIFF VACUUM GAGE 10 H2O 128K × 36 128Kx36 & 256Kx18 Synchronous pipelined SRAM 128K × 36 256K X 18 STANDARD SRAM, 2.7 ns, PBGA119 14 X 22 MM, BGA-119 128K X 36 STANDARD SRAM, 2.7 ns, PBGA119 14 X 22 MM, BGA-119 256K X 18 STANDARD SRAM, 3 ns, PBGA119 14 X 22 MM, BGA-119 SENSOR DIFF VACUUM GAGE 1PSI SENSOR ABSOLUTE 0-15PSIA 128Kx36 & 256Kx18 Synchronous pipelined SRAM
File Size	278.02K / 13 Page	View it Online	Download Datasheet

				Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
Part No.	K7P401822M-H16 K7P401822M-H19 K7P401822M-H20 K7P403622M K7P403622M-H16 K7P403622M-H19 K7P403622M-H20 K7P401822B-HC16 K7P401822B-HC20 K7P401822B-HC25 K7P403622B-HC16 K7P403622B-HC20 K7P403622B-HC25
OCR Text	pipelined SRAM 128Kx36 & 256Kx18 SRAM Revision History Rev. No. Rev. 0.0 Rev. 0.1 History - Preliminary specification release - Change specification format. No change was made in parameters. - Updated IDD, ISB and Input High Lev...
Description	128Kx36 & 256Kx18 Synchronous pipelined SRAM 128K × 36 128Kx36 & 256Kx18 Synchronous pipelined SRAM
File Size	239.13K / 12 Page	View it Online	Download Datasheet

				MICRON[Micron Technology]
Part No.	MT58L1MY18D MT58L512Y32D MT58L512Y36D MT58V512V36D MT58V512V32D
OCR Text	pipelined, DCD SYNCBURST SRAM 16Mb SYNCBURSTTM SRAM FEATURES * Fast clock and OE# access times * Single +3.3V 0.165Vor 2.5V 0.125V power supply (VDD) * Separate +3.3V or 2.5V isolated output buffer supply (VDDQ) * SNOOZE MODE for reduc...
Description	16Mb SYNCBURST⑩ SRAM 16Mb SYNCBURST SRAM
File Size	497.29K / 34 Page	View it Online	Download Datasheet

For pipelined Found Datasheets File :: 6083 Search Time::0.844ms
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