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  hemt Datasheet PDF File

For hemt Found Datasheets File :: 996    Search Time::4.375ms    
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    MGF4714CP 4714CP

Mitsubishi Electric Corporation
Mitsubishi Electric Semiconductor
Mitsubishi Electric, Corp.
Part No. MGF4714CP 4714CP
OCR Text hemt DESCRIPTION The MGF4714CP low-noise hemt(High Electron Mobility Transistor) is designed for use in L to Ku band amplifiers. The plastic mold package offer high cost performance, and has a configuration suitable for microstrip circu...
Description From old datasheet system
PLASTIC MOLD PACKAGED LOW NOISE InGaAs hemt 塑料模具包装低噪音铟镓砷迁移率晶体管

File Size 16.89K  /  3 Page

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    MAGX-000035-010000 MAGX-000035-01000S MAGX-000035-SB2PPR MAGX-000035-SB3PPR MAGX-000035-01000X MAGX-000035-01000X-15

M/A-COM Technology Solutions, Inc.
M/A-COM Technology Solution...
M/A-COM Technology Solu...
Part No. MAGX-000035-010000 MAGX-000035-01000S MAGX-000035-SB2PPR MAGX-000035-SB3PPR MAGX-000035-01000X MAGX-000035-01000X-15
OCR Text hemt power transistor 10w cw, 30 mhz - 3.5 ghz rev. v3 magx-000035-010000 magx-000035-01000s 1 1 m/a-com technology solutions inc. and its affiliates reserve the ri ght to make changes to the product(s) or information contain ed...
Description GaN on SiC hemt Power Transistor Common-Source configuration

File Size 586.43K  /  8 Page

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    HMC772LC4

Hittite Microwave Corporation
Part No. HMC772LC4
OCR Text hemt MMIC LOW NOISE AMPLIFIER, 2 - 12 GHz Features Noise Figure: 1.8 dB Gain: 15 dB Output IP3: +25 dBm P1dB Output Power: +13 dBm 50 Ohm Matched Input/Output Supply Voltage: +4V @ 45 mA 24 Lead Ceramic 4x4mm SMT Package: 16mm2 8 LOW ...
Description GaAs hemt MMIC LOW NOISE AMPLIFIER, 2 - 12 GHz

File Size 227.50K  /  6 Page

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    EUDYNA[Eudyna Devices Inc]
Part No. EGN030MK
OCR Text hemt 30W Preliminary FEATURES High Voltage Operation : VDS=50V High Power : 46.5dBm (typ.) @ P3dB High Efficiency: 60%(typ.) @ P3dB Linear Gain : 12dB(typ.) @ f=2700MHz Broad Frequency Range : 800 to 2800MHz Proven Reliability EGN030M...
Description High Voltage - High Power GaN-hemt

File Size 188.40K  /  3 Page

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    EUDYNA[Eudyna Devices Inc]
Part No. EGN045MK
OCR Text hemt 45W Preliminary FEATURES High Voltage Operation : VDS=50V High Power : 47.5dBm (typ.) @ P3dB High Efficiency: 60%(typ.) @ P3dB Linear Gain : 12dB(typ.) @ f=2200MHz Broad Frequency Range : 800 to 2200MHz Proven Reliability EGN045M...
Description High Voltage - High Power GaN-hemt

File Size 205.87K  /  3 Page

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    EUDYNA[Eudyna Devices Inc]
Part No. EGN21A045I EGN21A045IV
OCR Text hemt 45W Preliminary FEATURES High Voltage Operation : VDS=50V High Gain: 16dB(typ.) at Pout=39dBm(Avg.) High Efficiency: 35%(typ.) at Pout=39dBm(Avg.) Broad Frequency Range : 2100 to 2200MHz Proven Reliability EGN21A045IV High Vol...
Description High Voltage - High Power GaN-hemt

File Size 226.74K  /  4 Page

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    FLC157XP

Eudyna Devices Inc
Part No. FLC157XP
OCR Text hemt Chips FEATURES * * * * High Output Power: P1dB = 31.5dBm (Typ.) High Gain: G1dB = 6.0dB(Typ.) High PAE: add = 29.5%(Typ.) Proven Reliability Drain Drain DESCRIPTION The FLC157XP chip is a power GaAs FET that is designed for ...
Description GaAs FET & hemt Chips

File Size 55.15K  /  4 Page

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    FLK057XV

Eudyna Devices Inc
Part No. FLK057XV
OCR Text hemt Chips FEATURES * * * * High Output Power: P1dB = 27.0dBm(Typ.) High Gain: G1dB = 7.0dB(Typ.) High PAE: add = 32%(Typ.) Proven Reliability Source Drain Drain DESCRIPTION The FLK057XV chip is a power GaAs FET that is designed...
Description GaAs FET & hemt Chips

File Size 53.79K  /  4 Page

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    MIMIX BROADBAND INC
Part No. CF003-03-000X
OCR Text hemt transistor page 1 of 4 mimix broadband, inc., 10795 rockley rd., houston, texas 77099 tel: 281.988.4600 fax: 281.988.4615 mimixbroadband.com characteristic data and specifications are subject to change without notice. ? 2008 mimix b...
Description K BAND, GaAs, N-CHANNEL, RF POWER, HEMFET

File Size 859.38K  /  4 Page

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    CFH800

Infineon Technologies A...
ETC
INFINEON[Infineon Technologies AG]
Part No. CFH800
OCR Text hemt Preliminary Datasheet Features * Low noise figure and high associated gain for high IP3 receiver stages up to 4GHz Suitable for PCS CDMA and UMTS applications (F = 0.50dB; Ga = 17dB @ 3V; 30mA; f=1.8GHz) Low cost miniature package SOT...
Description Typical Common Source S - Parameters

File Size 71.94K  /  7 Page

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