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    TIM1414-8-252

Toshiba Semiconductor
Part No. TIM1414-8-252
OCR Text 8-252 TECHNICAL DATA FEATURES HIGH POWER P1dB=39.0 dBm at 13.75 GHz to 14.5 GHz HIGH GAIN G1dB=5.0 dB at 13.75 GHz to 14.5 GHz BROAD BAN...UNIT dBm dB A % C MIN. 38.0 4.0 TYP. MAX. 39.0 5.0 3.4 18 4.4 80 CONDITIONS VDS= 9V f= ...
Description HIGH POWER P1dB=39.0 dBm at 13.75 GHz to 14.5 GHz

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    Shenzhen Winsemi Microelectronics Co., Ltd
Part No. MCR100-8-T
OCR Text 8 t 21-2 sensitive sensitive sensitive sensitive gate gate gate gate silicon silicon silicon silicon controlled controlled controlled contro...unit i drm /i rrm off-state leakage current (v ak = v drm /v rrm ) tc=25 - - 1 a tc=125 1 00 v tm...
Description Silicon Controlled Rectifiers

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    SGS Thomson Microelectronics
Part No. BTA12-8 BTA12-600CW
OCR Text ...ation. 0123456789101112 0 2 4 6 8 1 0 1 2 1 4 1 6 p (w) it(rms)(a) 0 25 50 75 100 125 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 it(rms) (a) bta btb/t12 tc(c) 0 25 50 75 100 125 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 tamb(c) it(rms) (a) dpak (s=1cm ) 2 2 ...
Description 12A TRIACS

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    Roithner LaserTechnik G...
Part No. B5B-900-8
OCR Text 8 1 of 4 b5b-900-8 technical data led, 5 mm gaalas b5b-900-8 is a gaalas led mounted on a lead frame with a clear epoxy lens...unit power dissipation p d 170 mw forward current i f 100 ma pulse forward current * 1 i f...
Description B5B-900-8 is a GaAlAs LED mounted on a lead frame with a clear epoxy lens

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    RENESAS[Renesas Electronics Corporation]
Renesas Electronics Corporation.
Part No. CR05AS-8-ET24 CR05AS-8 CR05AS-8-ET14
OCR Text 8 Thyristor Low Power Use REJ03G0348-0300 Rev.3.00 Mar 22, 2007 Features * IT (AV) : 0.5 A * VDRM : 400 V * IGT : 100 A * Non-Insulat...Unit V V V V V REJ03G0348-0300 Rev.3.00 Mar 22, 2007 Page 1 of 8 CR05AS-8 Parameter RMS on-st...
Description 8-bit microcontroller with accelerated two-clock 80C51 core, 4 kB/8 kB/16 kB 3 V byte-erasable flash with 8-bit ADCs, SOT361-1 (TSSOP28), Reel Dry Pack, SMD, 13&quot;
Thyristor Low Power Use
8-bit microcontroller with accelerated two-clock 80C51 core 8 kB 3 V byte-erasable flash with 512-byte data EEPROM, SOT117-1 (DIP28), Tube
8-bit microcontroller with accelerated two-clock 80C51 core, 4 kB/8 kB/16 kB 3 V byte-erasable flash with 8-bit ADCs, SOT361-1 (TSSOP28), Reel Dry Pack, SMD, 13"
Smartcard RTC; ultra low power oscillator with integrated counter for initiating one time password generation, Uncased die, Circuit Element Packed On Reel 7"
Smartcard RTC; ultra low power oscillator with integrated counter for initiating one time password generation, Uncased die, Circuit Element Packed On Reel 7&quot;

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    Renesas Electronics, Corp.
Renesas Electronics Corporation.
RENESAS[Renesas Electronics Corporation]
Part No. CR05BS-8-ET23 CR05BS-8 CR05BS-8-ET13
OCR Text 8 Thyristor Low Power Use REJ03G0347-0200 Rev.2.00 Mar 22, 2007 Features * IT (AV) : 0.1 A * VDRM : 400 V * IGT : 100 A * Non-Insulat...Unit V V V V V REJ03G0347-0200 Rev.2.00 Mar 22, 2007 Page 1 of 4 CR05BS-8 Parameter RMS on-st...
Description Smartcard RTC; ultra low power oscillator with integrated counter for initiating one time password generation, Uncased die, Die In Waffle Carriers 晶闸管低功率的用
16-bit Fm I2C-bus 100 mA 40 V LED driver, SOT487-1 (TSSOP32), Reel Pack, SMD, 13&quot; 晶闸管低功率的用
8-channel constant current LED driver with output error detection, SOT403-1 (TSSOP16), Reel Pack, SMD, 13"
16-bit Fm I2C-bus 100 mA 40 V LED driver, SOT487-1 (TSSOP32), Reel Pack, SMD, 13"
Thyristor Low Power Use

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    BCR08AS-8

POWEREX[Powerex Power Semiconductors]
MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No. BCR08AS-8
OCR Text 8 LOW POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE BCR08AS-8 OUTLINE DRAWING Dimensions in mm 4.40.1 1.60.2 1.50.1...Unit V V Symbol IT (RMS) ITSM I2t PGM PG (AV) VGM IGM Tj Tstg -- Parameter RMS on-state curren...
Description LOW POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE

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    FLC257MH-8

Fujitsu Microelectronics
FUJITSU[Fujitsu Media Devices Limited]
Fujitsu Component Limited.
Part No. FLC257MH-8
OCR Text 8 C-Band Power GaAs FET FEATURES * * * * * High Output Power: P1dB = 34.0dBm(Typ.) High Gain: G1dB = 8.0dB(Typ.) High PAE: add = 35%(Typ.)...Unit V V W C C Fujitsu recommends the following conditions for the reliable operation of GaAs FET...
Description C-Band Power GaAs FET

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    Mitsubishi Electric Corporation
Part No. BCR1AM-8
OCR Text 8 low power use planar passivation type application contactless ac switches, heating, refrigerator, washing machine, electric fan, vending m...unit a a a 2 s w w v a c c g ratings 1.0 10 0.41 1 0.1 6 1 C40 ~ +125 C40 ~ +125 0.23 symbol v drm...
Description MITSUBISHI SEMICONDUCTOR (TRIAC) LOW POWER USE PLANAR PASSIVATION TYPE

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    Infineon Technologies A...
INFINEON[Infineon Technologies AG]
Part No. HYS64V16302GU-8-C2 HYS64V16302GU HYS64V16302GU-75-C2 HYS64V16302GU-75-D HYS64V16302GU-7-D HYS64V16302GU-7.5-D HYS64V16302GU-7.5-C2
OCR Text 8 Byte Dual-In-Line SDRAM Modules for PC main memory applications using 256Mbit technology * PC100-222, PC133-333 and PC133-222 versions * O...Unit * Programmed Latencies: Product Speed -7 -7.5 -8 CL tRCD 2 3 2 tRP 2 3 2 PC133 2 PC1...
Description 3.3 V 16M × 64-Bit, 128MByte SDRAM Module 168-pin Unbuffered DIMM Modules
3.3 V 16M 】 64-Bit, 128MByte SDRAM Module 168-pin Unbuffered DIMM Modules
SDRAM Modules - 128MB PC133 (3-3-3) 1-bank; End-of-Life
SDRAM Modules - 128MB PC133 (2-2-2) 1-bank; End-of-Life
3.3 V 16M 64-Bit/ 128MByte SDRAM Module 168-pin Unbuffered DIMM Modules
SDRAM|16MX64|CMOS|DIMM|168PIN|PLASTIC
3.3 V 16M 64-Bit, 128MByte SDRAM Module 168-pin Unbuffered DIMM Modules

File Size 77.83K  /  13 Page

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