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For ma. Found Datasheets File :: 341344    Search Time::3.203ms    
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    2SA2011 2SC5564

SANYO[Sanyo Semicon Device]
Sanyo Electric Co., Ltd.
Part No. 2SA2011 2SC5564
OCR Text ...0 -55 to +150 Unit V V V A A mA W W C C Electrical Characteristics at Ta = 25C Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Symbol ICBO IEBO hFE fT Cob VCB=(-)12...
Description    DC/DC Converter Applications
NPN Epitaxial Planar Silicon Transistors DC/DC Converter Applications
PNP Epitaxial Planar Silicon Transistors DC/DC Converter Applications
PNP/NPN Epitaxial Planar Silicon Transistors
DC/DC Converter Applications 直流/直流转换器应

File Size 48.71K  /  5 Page

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    UBA2080AT UBA2080P UBA2080T

NXP Semiconductors
Part No. UBA2080AT UBA2080P UBA2080T
OCR Text ...ver capability: i o(sink) = 400 ma and i o(source) = 200 ma ? maximum frequency 800 khz ? uba2080: ? outputs in phase with hin and lin inputs ? overlap protection ? uba2081: ? outputs in phase with clk input ? adjustable dead-time ? low act...
Description Half-bridge level-shift controller IC

File Size 547.09K  /  15 Page

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    2SA2013 2SC5566

SANYO[Sanyo Semicon Device]
Part No. 2SA2013 2SC5566
OCR Text ...0 -55 to +150 Unit V V V A A mA W W C C Electrical Characteristics at Ta = 25C Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Symbol ICBO IEBO hFE fT Cob VCB=(-)40...
Description    DC/DC Converter Applications
PNP/NPN Epitaxial Planar Silicon Transistors
PNP Epitaxial Planar Silicon Transistors DC/DC Converter Applications
NPN Epitaxial Planar Silicon Transistors DC/DC Converter Applications

File Size 48.85K  /  5 Page

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    2SA2018 2SA2030 2SA2119K

Rohm CO.,LTD.
ROHM[Rohm]
Part No. 2SA2018 2SA2030 2SA2119K
OCR Text ... Limits 15 12 500 1 Unit V V mA A 2SA2119K (1) Each lead has same dimensions ROHM : SMT3 EIAJ : SC-59 JEDEC : SOT-346 Abbreviated symbol : BW 2.9 (1) Emitter (2) Base (3) Collector Electrical characteristics (Ta=2...
Description Low frequency transistor

File Size 78.51K  /  3 Page

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    2SA2021

PANASONIC[Panasonic Semiconductor]
Part No. 2SA2021
OCR Text ... -100 100 125 -55 to +125 V V V mA mA mW C C 0 to 0.01 Parameter Symbol Rating Unit 1: Base 2: Emitter 3: Collector SSS Mini Type Package (3-pin) Marking Symbol: 3E I Electrical Characteristics Ta = 25C 3C Parameter ...
Description Silicon PNP epitaxial planer type

File Size 43.31K  /  1 Page

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    TOSHIBA
Part No. TPH8R008NH
OCR Text ...4.0 v (v ds = 10 v, i d = 0.5 ma) 3. 3. 3. 3. packaging and internal circuit packaging and internal circuit packaging and internal circuit packaging and internal circuit 1, 2, 3: source 4: gate 5, 6, 7, 8: drain 4. 4. 4. 4. absolu...
Description Power MOSFET (N-ch single 60V<VDSS≤150V)

File Size 236.29K  /  9 Page

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    TOSHIBA
Part No. TPCC8073
OCR Text ...2.3 v (v ds = 10 v, i d = 0.3 ma) 3. 3. 3. 3. packaging and internal circuit packaging and internal circuit packaging and internal circuit packaging and internal circuit 1, 2, 3: source 4: gate 5, 6, 7, 8: drain 4. 4. 4. 4. absolu...
Description Power MOSFET (N-ch single VDSS≤30V)

File Size 234.93K  /  9 Page

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    2SA2027

Isahaya Electronics Corporation
ETC[ETC]
List of Unclassifed Manufacturers
Part No. 2SA2027
OCR Text ...500 +150 -55 *+150 'PE V V V mA mW *Z *Z }*|L"O*} OE-1/4*\Z| AH PC Tj Tstg W hFEACe "j"O No. *`OEZ "dC"I"A* (Ta=25 *Z ) L*@* V(BR)CBO V(BR)EBO V(BR)CEO I I CBO EBO **@*@*@-U ROEN^*Ex*[X*~*"d I G~b^*Ex*[X*~*"d I ROEN^a'...
Description SILICON EPITAXIAL TRANSISTOR

File Size 54.89K  /  4 Page

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