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ICST[Integrated Circuit Systems]
Integrated Device Technology, Inc.
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| Part No. |
ICS9248-143 ICS9248YG-143-T ICS9248YF-143-T ICS9248YF-143LF-T AV9248F-143-T
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| OCR Text |
... free running PCICLK_F 1 - PCI early @ 3.3V 1 - 48MHz, @ 3.3V fixed. 1 - 24/48MHz @ 3.3V 2 - REF @3.3V, 14.318MHz. Features: Up to 137MHz frequency support 97MHz to support high-end AMD processor. Support power management: CLK, PCI, ... |
| Description |
Frequency generator and integrated buffer for Pentium II/III, K6
Single Chip for Notebook PCs, PII/PIII/K6, BX/MX/Apollo/MVP4
Frequency Generator & Integrated Buffers for PENTIUM II/IIITM & K6
133.37 MHz, PROC SPECIFIC CLOCK GENERATOR, PDSO48 0.300 INCH, SSOP-48
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| File Size |
503.92K /
16 Page |
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it Online |
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Samsung Electronic
SAMSUNG[Samsung semiconductor]
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| Part No. |
KMM372V410CS KMM372V400CK KMM372V400CS KMM372V410CK
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| OCR Text |
...f tWCStWCS(min) the cycle is an early write cycle and the data out pin will remain high impedance for the duration of the cycle. 8. Either tRCH or tRRH must be satisfied for a read cycle. 9. These parameters are referenced to the CAS leadin... |
| Description |
4M x 72 DRAM DIMM with ECC using 4Mx4, 4K 2K Refresh, 3.3V
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| File Size |
407.93K /
19 Page |
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it Online |
Download Datasheet |
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Samsung Electronic
SAMSUNG[Samsung semiconductor]
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| Part No. |
KMM372V883BS KMM372V803BK KMM372V803BS KMM372V883BK
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| OCR Text |
...f tWCStWCS(min) the cycle is an early write cycle and the data out pin will remain high impedance for the duration of the cycle. If tRWDtRWD(min), tCWDtCWD(min), tAWDtAWD(min) and tCPWDtCPWD(min). The cycle is a read-modify-write cycle and ... |
| Description |
8M x 72 DRAM DIMM with ECC using 8Mx8, 4K 8K Refresh, 3.3V
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| File Size |
416.95K /
18 Page |
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it Online |
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SAMSUNG[Samsung semiconductor]
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| Part No. |
KMM5324004BSWG KMM5324004BSW
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| OCR Text |
... tWCStWCS(min), the cycle is an early write cycle and the data out pin will remain high impedance for the duration of the cycle. 8. Either tRCH or tRRH must be satisfied for a read cycle. 9. These parameters are referenced to the CAS leadin... |
| Description |
4M x 32 DRAM SIMM Using 4Mx16, 4K Refresh, 5V
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| File Size |
393.13K /
19 Page |
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it Online |
Download Datasheet |
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SAMSUNG[Samsung semiconductor]
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| Part No. |
KMM5324004CSWG KMM5324004CSW
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| OCR Text |
... tWCStWCS(min), the cycle is an early write cycle and the data out pin will remain high impedance for the duration of the cycle. 8. Either tRCH or tRRH must be satisfied for a read cycle. 9. These parameters are referenced to the CAS leadin... |
| Description |
4M x 32 DRAM SIMM Using 4Mx16, 4K Refresh, 5V
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| File Size |
426.11K /
21 Page |
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it Online |
Download Datasheet |
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SAMSUNG[Samsung semiconductor]
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| Part No. |
KMM5328004BSWG KMM5328004BSW
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| OCR Text |
... tWCStWCS(min), the cycle is an early write cycle and the data out pin will remain high impedance for the duration of the cycle. 8. Either tRCH or tRRH must be satisfied for a read cycle. 9. These parameters are referenced to the CAS leadin... |
| Description |
8M x 32 DRAM SIMM Using 4Mx16, 4K Refresh, 5V
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| File Size |
397.76K /
19 Page |
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it Online |
Download Datasheet |
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SAMSUNG[Samsung semiconductor]
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| Part No. |
KMM5328004CSWG KMM5328004CSW
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| OCR Text |
... tWCStWCS(min), the cycle is an early write cycle and the data out pin will remain high impedance for the duration of the cycle. 8. Either tRCH or tRRH must be satisfied for a read cycle. 9. These parameters are referenced to the CAS leadin... |
| Description |
8M x 32 DRAM SIMM Using 4Mx16, 4K Refresh, 5V
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| File Size |
431.01K /
21 Page |
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it Online |
Download Datasheet |
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XILINX INC
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| Part No. |
XQ4036XL-3BG352N
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| OCR Text |
...witching characteristics global early bufges 1, 2, 5, and 6 to iob clock characteristics global early bufges 3, 4, 7, and 8 to iob clock characteristics symbol description device all min -3 -1 units max max t gls delay from pad through glob... |
| Description |
FPGA, 1296 CLBS, 22000 GATES, 166 MHz, PBGA352
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| File Size |
155.37K /
21 Page |
View
it Online |
Download Datasheet |
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Price and Availability
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