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fixture Datasheet PDF File

For fixture Found Datasheets File :: 14172 Search Time::2.938ms
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				FAIRCHILD[Fairchild Semiconductor]
Part No.	74ACTQ563 74ACTQ563PC
OCR Text	...80A Word Generator PC-163A Test fixture Tektronics Model 7854 Oscilloscope Procedure: 1. Verify Test fixture Loading: Standard Load 50 pF, 500. 2. Deskew the HFS generator so that no two channels have greater than 150 ps skew between them. ...
Description	Quiet Series⑩ Octal Latch with 3-STATE Outputs Quiet Series Octal Latch with 3-STATE Outputs From old datasheet system
File Size	56.92K / 7 Page	View it Online	Download Datasheet

				NXP Semiconductors
Part No.	MD8IC925NR1
OCR Text	...a+b) =58ma) v gs(q) ? 2.8 ? vdc fixture gate quiescent voltage (v dd =28vdc,i dq1(a+b) = 58 ma, measured in functional test) v gg(q) 4.1 4.8 5.6 vdc stage 2 -- off characteristics (1) zero gate voltage drain leakage current (v ds =65vdc,v g...
Description	RF LDMOS Wideband Integrated Power Amplifiers
File Size	796.36K / 22 Page	View it Online	Download Datasheet

				NXP Semiconductors
Part No.	A2I25D025NR1
OCR Text	...a vbw b 1. all data measured in fixture w ith device soldered to heatsink. 2. refer to an1977, quiescent current thermal tracking circ uit in the rf integrated circuit family , and to an1987, quiescent current control for the rf integrated ...
Description	RF LDMOS Wideband Integrated Power Amplifiers
File Size	725.32K / 19 Page	View it Online	Download Datasheet

				NXP Semiconductors
Part No.	AFV09P350-04GNR3 AFV09P350-04N AFV09P350-04NR3
OCR Text	...2,3) (in freescale doherty test fixture, 50 ohm system) v dd =48vdc,i dqa = 860 ma, v gsb =0.9vdc, p out = 100 w avg., f = 920 mhz, single--carrier w--cdma, iq magnit ude clipping, input signal par = 9.9 db @ 0.01% probability on ccdf. acpr...
Description	RF Power LDMOS Transistors
File Size	497.39K / 20 Page	View it Online	Download Datasheet

				NXP Semiconductors
Part No.	AFT18P350-4S2L AFT18P350-4S2LR6
OCR Text	...1,2) (in freescale doherty test fixture, 50 ohm system) v dd =28vdc,i dqa = 1000 ma, v gsb =1.2vdc, p out = 63 w avg., f = 1805 mhz, single--carrier w--cdma, iq magnit ude clipping, input signal par = 9.9 db @ 0.01% probability on ccdf. acp...
Description	RF Power LDMOS Transistor
File Size	491.48K / 13 Page	View it Online	Download Datasheet

				NXP Semiconductors
Part No.	MW7IC2040GNR1 MW7IC2040N MW7IC2040NBR1 MW7IC2040NR1
OCR Text	...130 madc) v gs(q) ? 2.7 ? vdc fixture gate quiescent voltage (v dd = 28 vdc, i dq1 = 130 madc, measured in functional test) v gg(q) 13 14.5 16 vdc 1. continuous use at maximum temperature will affect mttf. 2. mttf calculator available...
Description	RF LDMOS Wideband Integrated Power Amplifiers
File Size	1,024.57K / 29 Page	View it Online	Download Datasheet

				NXP Semiconductors
Part No.	MW6S004N MW6S004NT1
OCR Text	... = 50 madc) v gs(q) ? 2.7 ? vdc fixture gate quiescent voltage (1) (v dd = 28 vdc, i d = 50 madc, measured in functional test) v gg(q) 2.2 3 4.2 vdc drain - source on - voltage (v gs = 10 vdc, i d = 50 madc) v ds(on) ? 0.27 0.37 vdc dy...
Description	RF Power Field Effect Transistor
File Size	542.00K / 13 Page	View it Online	Download Datasheet

				MACOM[Tyco Electronics]
Part No.	NJM12901 NJM12901D1 NJM12901E NJM12901M NJM12901V PH2729-25M
OCR Text	...VSWR-T VSWR-S BROADBAND TEST fixture IMPEDANCE F (GHz) Z IF () Z OF () 2.70 2.80 2.90 38 - j14.4 35 - j16.3 33 - j17.8 17.1 - j8.7 15.0 - j8.7 13.3 - j8.3 TEST fixture INPUT CIRCUIT 50 Z IF TEST fixture OUTPUT CIRCUIT Z OF 50 M...
Description	RADAR PULSED POWER TRANSISTOR 25 WATTS, 2.70-2.90 GHz, 100ms PULSE, 10% DUTY PH2729-25M RADAR PULSED POWER TRANSISTOR 25 WATTS, 2.70-2.90 GHz, 100s PULSE, 10% DUTY RADAR PULSED POWER TRANSISTOR 25 WATTS 2.70-2.90 GHz 100ms PULSE 10% DUTY PH2729-25M RADAR PULSED POWER TRANSISTOR 25 WATTS / 2.70-2.90 GHz / 100s PULSE / 10% DUTY RADAR PULSED POWER TRANSISTOR 25 WATTS/ 2.70-2.90 GHz/ 100ms PULSE/ 10% DUTY PH2729-25M RADAR PULSED POWER TRANSISTOR 25 WATTS, 2.70-2.90 GHz, 100?? PULSE, 10% DUTY
File Size	97.49K / 2 Page	View it Online	Download Datasheet

				NXP Semiconductors
Part No.	MRF13750HS
OCR Text	... mhz narrowband production test fixture (page 11). 3. measured in 1300 mhz narrowband reference circuit (page 8). features ? internally input pre--matched for ease of use ? device can be used single--ended or in a push--pull configuration ?...
Description	RF Power LDMOS Transistors
File Size	501.73K / 19 Page	View it Online	Download Datasheet

				Cree, Inc
Part No.	PTVA084007NF
OCR Text	...ed in wolfspeed production test fixture) v dd = 48 v, i dq = 800 ma, p out = 80 w avg, ? 1 = 805 mhz, 3gpp signal, channel bandwidth = 3.84 mhz, peak/average = 10 db @ 0.01% ccdf. characteristic symbol min typ max unit ...
Description	Thermally-Enhanced High Power RF LDMOS FET 370 W, 48 V, 755 ?805 MHz
File Size	370.57K / 8 Page	View it Online	Download Datasheet

For fixture Found Datasheets File :: 14172 Search Time::2.938ms
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