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  enhancementmode Datasheet PDF File

For enhancementmode Found Datasheets File :: 105    Search Time::2.625ms    
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    Electronic Theatre Controls, Inc.
Part No. AN-937
OCR Text ...ain voltage. All HEXFET(R)s are enhancementmode devices. AN-937 (v.Int) SOURCE METALLIZATION SILICON GATE CHANNEL INSULATING OXIDE P N SOURCE GATE OXIDE N N TRANSISTOR TRANSISTOR DRAIN DRAIN All MOSFET voltages...
Description Gate Drive Characteristics and Requirements for HEXFET

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    TPC6005

Toshiba Semiconductor
Part No. TPC6005
OCR Text ... IDSS = 10 A (max) (VDS = 30 V) enhancementmode: Vth = 0.5 to 1.2 V (VDS = 10 V, ID = 200 A) Unit: mm Absolute Maximum Ratings (Ta = 25C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 k) Gate-source voltage Drain cur...
Description Notebook PC Applications

File Size 279.12K  /  7 Page

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    MGP15N60U-D

ON Semiconductor
Part No. MGP15N60U-D
OCR Text enhancementmode silicon gate this insulated gate bipolar transistor (igbt) uses an advanced termination scheme to provide an enhanced and reliable high voltageblocking capability. it also provides low onvoltage which results in efficient op...
Description Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate

File Size 106.90K  /  6 Page

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    MGP20N60U-D

ON Semiconductor
Part No. MGP20N60U-D
OCR Text enhancementmode silicon gate this insulated gate bipolar transistor (igbt) uses an advanced termination scheme to provide an enhanced and reliable high voltageblocking capability. it also provides low onvoltage which results in efficient op...
Description Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate

File Size 107.55K  /  6 Page

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    Motorola
Part No. P4N80E
OCR Text ... nchannel enhancementmode silicon gate this high voltage mosfet uses an advanced termination scheme to provide enhanced voltageblocking capability without degrading performance over time. in addition, this advanced tmo...
Description Search --To MTP4N80E

File Size 168.69K  /  8 Page

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    Motorola
Part No. 24N40E
OCR Text ... # $# nchannel enhancementmode silicon gate this high voltage mosfet uses an advanced termination scheme to provide enhanced voltageblocking capability without degrading performance over time. in addition, this advanced tmo...
Description Search --To MTW24N40E

File Size 152.88K  /  8 Page

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    NTMS5P02R2-D

ON Semiconductor
Part No. NTMS5P02R2-D
OCR Text ...t -5.4 amps, -20 volts pchannel enhancementmode single so8 package features ? high density power mosfet with ultra low r ds(on) providing higher efficiency ? miniature so8 surface mount package saves board space ? diode exhibits high speed...
Description Power MOSFET -5.4 Amps, -20 Volts P-Channel Enhancement-Mode Single SO-8 Package

File Size 83.68K  /  8 Page

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    Motorola, Inc.
Part No. MRF282
OCR Text enhancementmode lateral mosfets designed for class a and class ab pcn and pcs base station applications at frequencies up to 2600 mhz. suitable for fm, tdma, cdma, and multicarrier amplifier applications. ? specified twotone performance @ 2...
Description LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs

File Size 145.00K  /  11 Page

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    Motorola, Inc.
Part No. MRF9045M
OCR Text enhancementmode lateral mosfet designed for broadband commercial and industrial applications at frequen- cies up to 1.0 ghz. the high gain and broadband performance of this device make it ideal for largesignal, commonsource amplifier applic...
Description The RF Sub-Micron MOSFET Line RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET

File Size 142.24K  /  8 Page

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