1.5 1.9ghz pdf Datasheet P4 Full Text Search --- IC-ON-LINE


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1.5 1.9ghz Datasheet PDF File

For 1.5 1.9ghz Found Datasheets File :: 953 Search Time::5.203ms
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				NJRC[New Japan Radio]
Part No.	NJG1705V NJG1705V-C1 NJG1705V-C10 NJG1705V-C2 NJG1705V-C3 NJG1705V-C4 NJG1705V-C5 NJG1705V-C6 NJG1705V-C7 NJG1705V-C8 NJG1705V-C9 NJG1705V-L1 NJG1705V-L10 NJG1705V-L2 NJG1705V-L3 NJG1705V-L4 NJG1705V-L5 NJG1705V-L6 NJG1705V-L7 NJG1705V-L8 NJG1705V-L9 NJG1705V-R1
OCR Text	1.5/1.9ghz BAND FRONT-END GaAs MMIC nGENERAL DESCRIPTION NJG1705V is a front-end GaAs MMIC including a LNA, local amplifier and a Mixer, designed mainly for 1.5 and 1.9ghz band cellular phone. NJG1705V exhibits low noise of 16dB at 1.5GHz ...
Description	1.5/1.9ghz BAND FRONT-END GaAs MMIC
File Size	560.84K / 26 Page	View it Online	Download Datasheet

				NJRC[New Japan Radio]
Part No.	NJG1709KC1 NJG1709KC1-C1 NJG1709KC1-C10 NJG1709KC1-C11 NJG1709KC1-C2 NJG1709KC1-C3 NJG1709KC1-C4 NJG1709KC1-C5 NJG1709KC1-C6 NJG1709KC1-C7 NJG1709KC1-R2 NJG1709KC1-C8 NJG1709KC1-C9 NJG1709KC1-L1 NJG1709KC1-L10 NJG1709KC1-L11 NJG1709KC1-L2 NJG1709KC1-L3 NJG1709KC1-L4 NJG1709KC1-L5 NJG1709KC1-L6 NJG1709KC1-L7 NJG1709KC1-L8 NJG1709KC1-L9 NJG1709KC1-R1
OCR Text	1.5/1.9ghz BAND FRONT-END GaAs MMIC nGENERAL DESCRIPTION NJG1709KC1 is a front-end GaAs MMIC including a LNA, a local amplifier and a mixer, designed mainly for 1.5 or 1.9ghz band cellular phone. The ultra small & ultra thin FLP10 package ...
Description	1.5/1.9ghz BAND FRONT-END GaAs MMIC
File Size	777.51K / 29 Page	View it Online	Download Datasheet

				Sanyo Semicon Device
Part No.	SPM3252
OCR Text	...ut power. 0.4 0.16 0 to 0.1 Application Circuit CTL -- RX 6 4 1.6 2.8 RX ANT TX 0.95 0.95 1.9 2.9 0.8 1.1 0.6 1 3 1 : CTL--RX 2 : ANT 3 : CTL--TX 4 : TX 5 : GND 6 : RX SANYO : CP6 CTL -- TX ( Z...
Description	GaAs MMIC SPDT Switch
File Size	18.13K / 3 Page	View it Online	Download Datasheet

				SANYO[Sanyo Semicon Device]
Part No.	SPM3255
OCR Text	... [SPM3255] 0.6 0.4 6 4 0 to 0.1 1.6 2.8 0.95 0.95 1.9 2.9 0.6 1 3 0.16 Specifications Absolute Maximum Ratings at Ta = 25C Parameter ...5 : GND 6 : RX SANYO : CP6 0.8 1.1 Ratings 5 -55 to +150 -20 to +70 Unit V C C Electrica...
Description	Single Power Supply Operation RF Switch MMIC
File Size	28.82K / 3 Page	View it Online	Download Datasheet

				SIEMENS[Siemens Semiconductor Group]
Part No.	BFP196W Q62702-F1576
OCR Text	...elecommunications systems up to 1.5GHz at collector currents from 20mA to 80mA * Power amplifier for DECT and PCN systems * fT = 7.5GHz F = 1.5 dB at 900MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Typ...
Description	From old datasheet system NPN Silicon RF Transistor(For low noise low distortion broadband amplifiers in antenna and telecommunications) NPN Silicon RF Transistor(For low noise, low distortion broadband amplifiers in antenna and telecommunications)
File Size	60.65K / 7 Page	View it Online	Download Datasheet

				SIEMENS[Siemens Semiconductor Group]
Part No.	BFP196 Q62702-F1320
OCR Text	...elecommunications systems up to 1.5GHz at collector currents from 20mA to 80mA * Power amplifier for DECT and PCN systems * fT = 7.5GHz F = 1.5 dB at 900MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Typ...
Description	From old datasheet system NPN Silicon RF Transistor (For low noise, low distortion broadband amplifiers in antenna and telecommunications)
File Size	61.07K / 7 Page	View it Online	Download Datasheet

				SIEMENS[Siemens Semiconductor Group]
Part No.	BFR181W Q62702-F1491
OCR Text	...5 mA to 12mA * fT = 8GHz F = 1.45dB at 900MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking...5 mA, VCE = 8 V Semiconductor Group 2 Dec-11-1996 BFR 181W Electrical Characteristics...
Description	NPN Silicon RF Transistor )For low noise/ high-gain broadband amplifiers at collector currents from 0.5 mA to 12mA) NPN Silicon RF Transistor )For low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12mA) From old datasheet system
File Size	56.17K / 7 Page	View it Online	Download Datasheet

				SIEMENS[Siemens Semiconductor Group]
Part No.	BFR181 Q62702-F1314
OCR Text	...5 mA to 12mA * fT = 8GHz F = 1.45dB at 900MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking...5 mA, VCE = 8 V Semiconductor Group 2 Dec-11-1996 BFR 181 Electrical Characteristics ...
Description	From old datasheet system NPN Silicon RF Transistor (For low noise high-gain broadband amplifiers at collector currents from 0.5 mA to 12mA) NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12mA)
File Size	57.16K / 7 Page	View it Online	Download Datasheet

				SIEMENS[Siemens Semiconductor Group]
Part No.	BFS480 Q62702-F1531
OCR Text	...0.2mA to 8mA * fT = 7GHz F = 1.5dB at 900MHz * Two (galvanic) internal isolated Transistors in one package ESD: Electrostatic dischar...5 = E 3/6 = C Package SOT-363 data below is of a single transistor Maximum Ratings Paramete...
Description	NPN Silicon RF Transistor (For low noise/ low-power amplifiers in mobile communication systems) NPN Silicon RF Transistor (For low noise, low-power amplifiers in mobile communication systems) From old datasheet system
File Size	52.38K / 6 Page	View it Online	Download Datasheet

				HITACHI[Hitachi Semiconductor]
Part No.	HA22033
OCR Text	...ifier of Micro Wave Application(1.5 to 1.9ghz) Low voltage and low current operation (2.7V, 1.7mA typ.) Low noise (1.4 dB typ. @1.5GHz) High power gain (14 dB typ. @1.5GHz) Built-in matching circuits (50) Small surface mount package (MPAK-5...
Description	GaAs MMIC Low Noise Amplifier for Micro Wave Application
File Size	43.33K / 12 Page	View it Online	Download Datasheet

For 1.5 1.9ghz Found Datasheets File :: 953 Search Time::5.203ms
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