Part Number Hot Search : 
A1201 XP01601 TDA20 4029B 4HCT3 080CT P2102 L9310
Product Description
Full Text Search
  enhancementmode Datasheet PDF File

For enhancementmode Found Datasheets File :: 96    Search Time::1.25ms    
Page :: | 1 | 2 | <3> | 4 | 5 | 6 | 7 | 8 | 9 | 10 |   

    TP533507 TP5335K1-G

Supertex, Inc
Part No. TP533507 TP5335K1-G
OCR Text ...ertex TP5335 is a low threshold enhancementmode (normally-off) transistor utilizing an advanced vertical DMOS structure and Supertex's well-proven silicon-gate manufacturing process. This combination produces a device with the power handlin...
Description P-Channel Enhancement-Mode Vertical DMOS FET

File Size 393.27K  /  3 Page

View it Online

Download Datasheet





    2N666007

Supertex, Inc
Part No. 2N666007
OCR Text ... Supertex 2N6660 and 2N6661 are enhancementmode (normally-off) transistors that utilizes a vertical DMOS structure and Supertex's well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capa...
Description N-Channel Enhancement-Mode Vertical DMOS FETs

File Size 392.01K  /  3 Page

View it Online

Download Datasheet

    MGA-425P807 MGA-425P8-BLK MGA-425P8-TR1 MGA-425P8-TR2

AVAGO TECHNOLOGIES LIMITED
Part No. MGA-425P807 MGA-425P8-BLK MGA-425P8-TR1 MGA-425P8-TR2
OCR Text ...Technologies's proprietary GaAs enhancementmode pHEMT process. MGA-425P8 is housed in a miniature 2.0 x 2.0 x 0.75 mm 8-lead leadless-plastic-chip-carrier (LPCC) package. The compact footprint, low profile couple with the excellent thermal ...
Description GaAs Enchancement-mode PHEMT Power Amplifier in 2x2 mm2 LPCC Package

File Size 196.15K  /  15 Page

View it Online

Download Datasheet

    TPC600507

Toshiba Semiconductor
Part No. TPC600507
OCR Text ... IDSS = 10 A (max) (VDS = 30 V) enhancementmode: Vth = 0.5 to 1.2 V (VDS = 10 V, ID = 200 A) Unit: mm Absolute Maximum Ratings (Ta = 25C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 k) Gate-source voltage Drain cur...
Description Notebook PC Applications Portable Equipment Applications

File Size 252.54K  /  7 Page

View it Online

Download Datasheet

    MRF134

M/A-COM Technology Solu...
M/A-COM Technology Solutions, Inc.
Part No. MRF134
OCR Text ... MRF137 is a RF power N-Channel enhancementmode field-effect transistor (FET) designed especially for VHF power amplifier applications. M/A-COM RF MOS FETs feature a vertical structure with a planar design, thus avoiding the processing diff...
Description    The RF MOSFET Line: Broadband RF Power FET
The RF MOSFET Line: Broadband RF Power FET 5.0W, to 400MHz, 28V

File Size 492.22K  /  12 Page

View it Online

Download Datasheet

    MRF136Y MRF136Y-15

M/A-COM Technology Solu...
M/A-COM Technology Solutions, Inc.
Part No. MRF136Y MRF136Y-15
OCR Text ... MRF137 is a RF power N-Channel enhancementmode field-effect transistor (FET) designed especially for VHF power amplifier applications. M/A-COM RF MOS FETs feature a vertical structure with a planar design, thus avoiding the processing diff...
Description    The RF MOSFET Line
The RF MOSFET Line 30W, to 400MHz, 28V

File Size 404.34K  /  10 Page

View it Online

Download Datasheet

    MRF136 MRF136-15

M/A-COM Technology Solu...
M/A-COM Technology Solutions, Inc.
Part No. MRF136 MRF136-15
OCR Text ... MRF137 is a RF power N-Channel enhancementmode field-effect transistor (FET) designed especially for VHF power amplifier applications. M/A-COM RF MOS FETs feature a vertical structure with a planar design, thus avoiding the processing diff...
Description    The RF MOSFET Line
The RF MOSFET Line 15W, to 400MHz, 28V

File Size 597.74K  /  12 Page

View it Online

Download Datasheet

    MRF137

M/A-COM Technology Solutions, Inc.
Part No. MRF137
OCR Text ... MRF137 is a RF power N-Channel enhancementmode field-effect transistor (FET) designed especially for VHF power amplifier applications. M/A-COM RF MOS FETs feature a vertical structure with a planar design, thus avoiding the processing diff...
Description The RF MOSFET Line 30W, to 400MHz, 28V

File Size 430.72K  /  11 Page

View it Online

Download Datasheet

    MRF160

Advanced Semiconductor
Part No. MRF160
OCR Text enhancementmode N-Channel TMOS designed for wideband large-signal amplifier and oscillator applications to 500 MHz. PACKAGE STYLE .280 4L PILL MAXIMUM RATINGS ID VDSS VGS PDISS TJ TSTG JC 0.5 mA 65 V 40 V 8.0 W @ TC = 25 C -65 C to +...
Description POWE FIELD EFFECT TRANSISTOR

File Size 158.12K  /  1 Page

View it Online

Download Datasheet

    AN-937

List of Unclassifed Manufacturers
Part No. AN-937
OCR Text ...ain voltage. All HEXFET(R)s are enhancementmode devices. AN-937 (v.Int) SOURCE METALLIZATION SILICON GATE CHANNEL INSULATING OXIDE P N SOURCE GATE OXIDE N N TRANSISTOR TRANSISTOR DRAIN DRAIN All MOSFET voltages...
Description Gate Drive Characteristics and Requirements for HEXFET

File Size 365.72K  /  21 Page

View it Online

Download Datasheet

For enhancementmode Found Datasheets File :: 96    Search Time::1.25ms    
Page :: | 1 | 2 | <3> | 4 | 5 | 6 | 7 | 8 | 9 | 10 |   

▲Up To Search▲

 




Price and Availability




 
Price & Availability of enhancementmode

All Rights Reserved © IC-ON-LINE 2003 - 2022  

[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy]
Mirror Sites :  [www.datasheet.hk]   [www.maxim4u.com]  [www.ic-on-line.cn] [www.ic-on-line.com] [www.ic-on-line.net] [www.alldatasheet.com.cn] [www.gdcy.com]  [www.gdcy.net]


 . . . . .
  We use cookies to deliver the best possible web experience and assist with our advertising efforts. By continuing to use this site, you consent to the use of cookies. For more information on cookies, please take a look at our Privacy Policy. X
3.1595969200134