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  1200a Datasheet PDF File

For 1200a Found Datasheets File :: 414    Search Time::1.969ms    
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    1MBI1200UC-170

Fuji Electric
Part No. 1MBI1200UC-170
OCR Text ... = 20V Ic = 1200mA VGE=15V Ic = 1200a Tj= 25C Tj=125C Tj= 25C Tj=125C min. 5.5 - Characteristics typ. max. 6.5 2.20 2.55 2.05 2.40 120 1.10 0.65 1.50 0.40 1.95 2.15 1.80 2.00 0.45 0.14 1.0 2400 7.5 2.50 2.35 2.30 2.15 - Units mA...
Description IGBT MODULE

File Size 496.17K  /  13 Page

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    FF1200R12KE3

eupec GmbH
Part No. FF1200R12KE3
OCR Text ...ate emitter leakage current IC= 1200a, VGE= 15V, Tvj= 25C, IC= 1200a, VGE= 15V, Tvj= 125C, IC= 48mA, VCE= VGE, Tvj= 25C, VGE= -15V...+15V; VCE=...V f= 1MHz, Tvj= 25C, VCE= 25V, VGE= 0V f= 1MHz, Tvj= 25C, VCE= 25V, VGE= 0V VGE= 0V, Tvj= 25C,...
Description IGBT-Modules

File Size 142.46K  /  9 Page

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    CM1200DB-34N

Mitsubishi Electric Semiconductor
Part No. CM1200DB-34N
OCR Text .................................. 1200a q VCES ....................................................... 1700V q Insulated Type q 2-element in a Pack q Cu Baseplate q Trench Gate IGBT : CSTBTTM q Soft Reverse Recovery Diode APPLICATION Motor...
Description HIGH POWER SWITCHING USE INSULATED TYPE

File Size 58.25K  /  6 Page

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    Mitsubishi
Part No. CM600HA-24H
OCR Text ...tf trr Qrr IE = 600A, diE/dt = -1200a/s IE = 600A, diE/dt = -1200a/s VCC = 600V, IC = 600A, VGE1 = VGE2 = 15V, RG = 2.1 VGE = 0V, VCE = 10V Test Conditions Min. - - - - - - - - - Typ. - - - - - - - - 4.46 Max. 120 42 24 300 700 450 350 250 ...
Description TRANSISTOR,IGBT POWER MODULE,INDEPENDENT,1.2KV V(BR)CES,600A I(C)

File Size 46.96K  /  4 Page

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    CM1200HA-24J

Powerex Power Semicondu...
POWEREX[Powerex Power Semiconductors]
Part No. CM1200HA-24J
OCR Text ...= 0V IC = 120mA, VCE = 10V IC = 1200a, VGE = 15V, Tj = 25C IC = 1200a, VGE = 15V, Tj = 125C Total Gate Charge Emitter Current Voltage** VCC = 600V, IC = 1200a, VGE = 15V IE = 1200a, VGE = 0V Min. - - 4.5 - - - - Typ. - - 6.0 2.4 2.5 5000 - ...
Description Single IGBTMOD?H-Series Module 1200 Amperes/1200 Volts
Single IGBTMOD H-Series Module 1200 Amperes/1200 Volts
Single IGBTMOD⑩ H-Series Module 1200 Amperes/1200 Volts

File Size 74.33K  /  4 Page

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    CM1200HB-66H CM1200HB-66H05

Mitsubishi Electric Semiconductor
Part No. CM1200HB-66H CM1200HB-66H05
OCR Text .................................. 1200a q VCES ....................................................... 3300V q Insulated Type q 1-element in a pack APPLICATION Inverters, Converters, DC choppers, Induction heating, DC to DC converters. OU...
Description HIGH POWER SWITCHING USE INSULATED TYPE

File Size 47.37K  /  4 Page

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    GP1201FSS18

Dynex Semiconductor, Ltd.
DYNEX[Dynex Semiconductor]
Part No. GP1201FSS18
OCR Text ...nductance Internal Construction 1200a Per Module KEY PARAMETERS VCES (typ) VCE(sat) (max) IC (max) IC(PK) 1800V 2.6V 1200a 2400A External connection APPLICATIONS s s s s C1 Aux C C2 High Reliability Inverters Motor Con...
Description Single Switch Low V IGBT Module 1200 A, 1800 V, N-CHANNEL IGBT

File Size 127.05K  /  9 Page

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    CM1200HC-34H

Mitsubishi Electric Semiconductor
Part No. CM1200HC-34H
OCR Text .................................. 1200a q VCES ....................................................... 1700V q Insulated Type q 1-element in a Pack q AISiC Baseplate q Soft Reverse Recovery Diode APPLICATION Traction drives, High Reliabili...
Description HIGH POWER SWITCHING USE INSULATED TYPE

File Size 61.96K  /  6 Page

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    IKW50N65F5

Infineon Technologies AG
Part No. IKW50N65F5
OCR Text ...400v, i f =25.0a, di f /dt =1200a/s diode reverse recovery time t rr - 32 - ns diode reverse recovery charge q rr - 0.26 - c diode peak reverse recovery current i rrm - 13.3 - a diode peak rate of fall of reverse recoverycurrentduring...
Description 650V DuoPack IGBT and Diode High speed switching series fifth generation

File Size 2,366.24K  /  17 Page

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