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  id-3.1a Datasheet PDF File

For id-3.1a Found Datasheets File :: 200    Search Time::4.016ms    
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    IRLI2910

IRF[International Rectifier]
Part No. IRLI2910
OCR Text ... = 100V RDS(on) = 0.026 G ID = 31A S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switch...
Description HEXFET Power MOSFET

File Size 140.03K  /  8 Page

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    VN10K VN10KN3

Supertex, Inc.
Supertex Inc
SUTEX[Supertex, Inc]
Part No. VN10K VN10KN3
OCR Text ...S / BVDGS 60V RDS(ON) (max) 5.0 ID(ON) (min) 0.75A Order Number / Package TO-92 VN10KN3 Features Free from secondary breakdown Low pow...31A ID (pulsed) 1.0A Power Dissipation @ TC = 25C 1.0W jc ja IDR 0.31A IDRM 1.0A C/W ...
Description N-Channel Enhancement-Mode Vertical DMOS FETs

File Size 448.45K  /  4 Page

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    IRFU3707 IRFR3707 IRFR3707PBF IRFR3707TRR IRFU3707PBF

IRF[International Rectifier]
Part No. IRFU3707 IRFR3707 IRFR3707PBF IRFR3707TRR IRFU3707PBF
OCR Text ...DSS 30V RDS(on) max 13m ID 61A High Frequency Buck Converters for Computer Processor Power Benefits l l l Ultra-Low RDS(o...31A, VGS = 0V TJ = 125C, I S = 31A, VGS = 0V TJ = 25C, I F = 31A, VR=20V di/dt = 100A/s TJ = 125C...
Description 30V Single N-Channel HEXFET Power MOSFET in a I-Pak package
30V Single N-Channel HEXFET Power MOSFET in a D-Pak package
Power MOSFET(Vdss=30V, Rds(on)max=13mohm, Id=61A?)
Power MOSFET(Vdss=30V, Rds(on)max=13mohm, Id=61A)
Power MOSFET(Vdss=30V, Rds(on)max=13mohm, Id=61A?

File Size 134.17K  /  9 Page

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    IRFU3708 IRFR3708 IRFR3708TR IRFR3708TRL IRFR3708PBF IRFR3708TRR

IRF[International Rectifier]
Part No. IRFU3708 IRFR3708 IRFR3708TR IRFR3708TRL IRFR3708PBF IRFR3708TRR
OCR Text ...S 30V RDS(on) max 12.5m ID 61A l Benefits l l l Ultra-Low Gate Impedance Very Low RDS(on) at 4.5V VGS Fully Characterized...31A, VGS = 0V TJ = 125C, IS = 31A, VGS = 0V TJ = 25C, IF = 31A, VR=20V di/dt = 100A/s TJ = 125C, ...
Description 30V Single N-Channel HEXFET Power MOSFET in a I-Pak package
Power MOSFET(Vdss=30V, Rds(on)max=12.5mohm, Id=61A?
Power MOSFET(Vdss=30V, Rds(on)max=12.5mohm, Id=61A)
Power MOSFET(Vdss=30V, Rds(on)max=12.5mohm, Id=61A?)
30V Single N-Channel HEXFET Power MOSFET in a D-Pak package

File Size 127.77K  /  9 Page

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    NTE2930

NTE Electronics
Part No. NTE2930
OCR Text .... . . . . . 100V Drain Current, ID Continuous TC = +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31A TC = +100C . . . . . . . . . . . . . . . . . . . . . ....
Description MOSFET N-Channel, Enhancement Mode High Speed Switch

File Size 23.34K  /  3 Page

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    NTE2980

NTE Electronics, Inc.
Part No. NTE2980
OCR Text ...Maximum Ratings: Drain Current, ID Continuous (VGS = 5V) TC = +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ....31A Total Power Dissipation (TC = +25C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...
Description Dual Channel, 1/1, 25Mbps Digital Isolator 8-SOIC -40 to 125
Logic Level MOSFET N-Channel, Enhancement Mode High Speed Switch

File Size 23.79K  /  3 Page

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    NTE2981

NTE[NTE Electronics]
Part No. NTE2981
OCR Text ...Maximum Ratings: Drain Current, ID Continuous (VGS = 5V) TC = +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ....31A Total Power Dissipation (TC = +25C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...
Description Logic Level MOSFET N-Channel, Enhancement Mode High Speed Switch

File Size 23.93K  /  3 Page

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    NTE2986 NTE2985

NTE[NTE Electronics]
Part No. NTE2986 NTE2985
OCR Text ...Maximum Ratings: Drain Current, ID Continuous (VGS = 5V) TC = +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ....31A, Note 4 VGS = 4V, ID = 25A, Note 4 VDS = VGS, ID = 250A VDS 25V, ID = 31A, Note 4 VDS = 60V, VG...
Description Logic Level MOSFET N-Channel, Enhancement Mode High Speed Switch

File Size 26.52K  /  3 Page

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    IRFZ44L IRFZ44S IRFZ44STRL IRFZ44STRR

IRF[International Rectifier]
Part No. IRFZ44L IRFZ44S IRFZ44STRL IRFZ44STRR
OCR Text ...S = 60V RDS(on) = 0.028 G ID = 50A Description Third Generation HEXFETs from International Rectifier utilize advanced processing tec...31A 4.0 V VDS = VGS, ID = 250A --- S VDS = 25V, ID = 31A 25 VDS = 60V, VGS = 0V A 250 VDS = 48V, VG...
Description 60V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
(IRFZ44L / IRFZ44S) HEXFET Power MOSFET

File Size 320.84K  /  10 Page

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    IRFZ44R

International Rectifier, Corp.
IRF[International Rectifier]
Part No. IRFZ44R
OCR Text ...= 60V RDS(on) = 0.028 G S ID = 50*A Advanced HEXFET(R) Power MOSFETs from International Rectifier utilize advanced processing techn...31A 4.0 V VDS = VGS, ID = 250A --- S VDS = 25V, ID = 31A 25 VDS = 60V, VGS = 0V A 250 VDS = 48V, VG...
Description Power MOSFET(Vdss=60V, Rds(on)=0.028ohm, Id=50*A) 功率MOSFET(减振钢板基本\u003d 60V的,的Rds(on)\u003d 0.028ohm,身份证\u003d 50 *甲)
60V Single N-Channel HEXFET Power MOSFET in a TO-220AB package

File Size 152.09K  /  8 Page

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