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  2140 Datasheet PDF File

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    B39212B7967P810

EPCOS
Part No. B39212B7967P810
OCR Text ...ovember 09, 2011 b7967 1950.0 / 2140.0 mhz please read cautions and warnings and important notes at the end of this document. saw components saw duplexer data sheet application n low-loss saw duplexer for wcdma femtocell sys- tems n low in...
Description SAW Components

File Size 242.25K  /  13 Page

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    FREESCALE SEMICONDUCTOR INC
Part No. MRF21090SR3
OCR Text ...ypical w - cdma performance for 2140 mhz, 28 volts 4.096 mhz bw @ 5 mhz offset, 1 perch 15 dtch: output power ? 11.5 watts efficiency ? 16% gain ? 12.2 db acpr ? - 45 dbc ? capable of handling 10:1 vswr, @ 28 vdc, 2140 mhz, 90 watts cw ou...
Description S BAND, Si, N-CHANNEL, RF POWER, MOSFET

File Size 383.43K  /  8 Page

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    TQM8M9074

TriQuint Semiconductor
Part No. TQM8M9074
OCR Text ...plifier tqm8m9074 - pcb2140 2140 mhz eval board standard t/r size = 25 00 pieces on a 15 reel. pin # symbol 1 a mp1 _i n 2 , 4, 6, 7, 9, 10, 12, 14, 16, 17, 18, 19 nc (no connect) 3 a mp1 _ o ut / vcc a...
Description W High Linearity Variable Gain Amplifier

File Size 807.71K  /  9 Page

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    BLF2022S-90

NXP SEMICONDUCTORS
Part No. BLF2022S-90
OCR Text ...35 - 28 - single carrier w-cdma 2140 28 750 15 (av) 13.0 20 -- 40 caution this product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport and handling. for further information, refer to p...
Description UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET

File Size 117.98K  /  13 Page

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    FREESCALE SEMICONDUCTOR INC
Part No. MHL21336
OCR Text ... ? power gain: 31 db typ (@ f = 2140 mhz) ? excellent phase linearity and group delay characteristics ? ideal for feedforward base station applications table 1. absolute maximum ratings (t c = 25 c unless otherwise noted) rating symbol v...
Description 2110 MHz - 2170 MHz RF/MICROWAVE NARROW BAND HIGH POWER AMPLIFIER

File Size 110.35K  /  8 Page

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    MRF21030LR5

Freescale Semiconductor, Inc
Part No. MRF21030LR5
OCR Text ...= 30 w pep, i dq = 250 ma, f1 = 2140.0 mhz, f2 = 2140.1 mhz) g ps ? 13 ? db two--tone drain efficiency (v dd =28vdc,p out = 30 w pep, i dq = 250 ma, f1 = 2140.0 mhz, f2 = 2140.1 mhz) ? 33 ? % 3rd order intermodulation distortion (v dd =28v...
Description RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs

File Size 706.50K  /  9 Page

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    TRIQUINT SEMICONDUCTOR INC
Part No. SCG015B-G
OCR Text ...00 2500 test frequency mhz 2140 gain db 13.5 15 input return loss db 16 20 output return loss db 10 output p1db dbm +23 +24 output ip3 (2) dbm +37.5 +40 noise figure db 5 device voltage v 5 devic...
Description 1800 MHz - 2500 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER

File Size 240.00K  /  5 Page

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    331211503040

Wurth Elektronik GmbH & Co. KG, Germany.
Part No. 331211503040
OCR Text ... 331211503040 si ze a4 si ze: 2140 a di men si ons: [mm] b re com men ded land pat tern: [mm] re com men ded com pres si on: d pro per ties: pro per ties ma te ri al va lue cop per be ryl li um (cu be) gold- plated(a...
Description WE-SECF SMD EMI Contact Finger

File Size 967.32K  /  5 Page

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    飞思卡尔半导体(中国)有限公司
Part No. MHL21336N
OCR Text ... ? power gain: 31 db typ (@ f = 2140 mhz) ? input vswr 1.5:1 features ? excellent phase linearity and group delay characteristics ? ideal for feedforward base station applications ? n suffix indicates lead - free terminations table 1. a...
Description 3G Band RF Linear LDMOS Amplifier 3G频段射频线性LDMOS的放大器

File Size 105.55K  /  5 Page

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