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Intel Corp.
Intel, Corp.
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| Part No. |
M80C186EB-16 M80C186EB-13
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| OCR Text |
...l aam division div idiv aad cbw cwd string operations movs ins outs cmps scas lods stos rep repe/repz repne/repnz logicals not and or xor test shifts shl/sal shr sar rotates rol ror rcl rcr flag operations stc clc cmc std cld sti cli extern... |
| Description |
16-Bit High-Integration Embedded Processor(16位高集成嵌入式处理器) 16位高性能嵌入式处理器集成16位高集成嵌入式处理器
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| File Size |
864.93K /
56 Page |
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it Online |
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Hitachi,Ltd.
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| Part No. |
HM51W17805LJ-6 HM51W17805LJ-7 HM51W17805LTS-6
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| OCR Text |
...ns 14 cas to we delay time t cwd 30 34 40 ns 14 column address to we delay time t awd 42 49 57 ns 14 oe hold time from we t oeh 13 15 18 ns refresh cycle hm51w17805 -5 -6 -7 parameter symbol min max min max min max unit note... |
| Description |
16 M EDO DRAM(2-Mword*8-bit) 2K Refresh
16M EDO DRAM(2-Mword*8-bit)2k Refresh 动态随机存取存储器62-mword*8位）2刷新
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| File Size |
430.53K /
33 Page |
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it Online |
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Hanbit Electronics Co.,Ltd.
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| Part No. |
HMD4M1Z1
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| OCR Text |
...p time 0 0 ms 7 t cwd /cas to /we delay time 15 15 ms 7,13 t rwd /ras to /we delay time 50 60 ns 7 t awd column address to /we delay time 25 30 ns 7 t cpwd /cas precharge to /w... |
| Description |
4Mbit(4Mx1bit) Fast Page Mode, 1K Refresh, 20Pin ZIP, 5V Design
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| File Size |
182.95K /
6 Page |
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it Online |
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SAMSUNG SEMICONDUCTOR CO. LTD.
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| Part No. |
KMM364C213CK
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| OCR Text |
...0 ns 7 cas to w delay time t cwd 36 40 ns 7 column address to w delay time t awd 48 55 ns 7 cas precharge to w delay time t cpwd 53 60 ns 7
dram module kmm364c213ck/cs test condition : v ih /v il =2.4/0.8v, v oh /v ol =2.4/0.4v... |
| Description |
2M x 64 DRAM DIMM(2M x 64 动RAM模块)
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| File Size |
366.80K /
19 Page |
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it Online |
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SAMSUNG SEMICONDUCTOR CO. LTD.
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| Part No. |
KMM366F1600BK2 KMM366F1680BK2
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| OCR Text |
...0 ns 7 cas to w dealy time t cwd 33 38 ns 7 ras to w dealy time t rwd 70 84 ns 7
dram module kmm366f160(8)0bk2 ac characteristics (0 c t a 70 c, v cc =3.3v 0.3v. see notes 1,2.) test condition : v ih /v il =2.2/0.7v, v oh /v ... |
| Description |
16M x 64 DRAM DIMM(16M x 64 动RAM模块)
16M x 64 DRAM DIMM(16M x 64 ?ㄦ?RAM妯″?)
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| File Size |
425.18K /
20 Page |
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it Online |
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SAMSUNG SEMICONDUCTOR CO. LTD.
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| Part No. |
KMM366F203CK KMM366F213CK
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| OCR Text |
...0 ns 7 cas to w dealy time t cwd 36 40 ns 7 ras to w dealy time t rwd 73 85 ns 7,14
dram module kmm366f213ck kmm366f203ck test condition : v ih /v il =2.0/0.8v, v oh /v ol =2.0/0.8v, output loading cl=100pf parameter symbol -5 -6 u... |
| Description |
2M x 64 DRAM DIMM(2M x 64 动RAM模块)
2M x 64 DRAM DIMM(2M x 64 ?ㄦ?RAM妯″?)
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| File Size |
408.83K /
20 Page |
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it Online |
Download Datasheet |
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SAMSUNG SEMICONDUCTOR CO. LTD.
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| Part No. |
KMM366F410CK1 KMM366F400CK1
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| OCR Text |
...0 ns 7 cas to w dealy time t cwd 36 40 ns 7
dram module kmm366f410ck1 kmm366f400ck1 ac characteristics (0 c t a 70 c, v cc =3.3v 0.3v. see notes 1,2.) test condition : vih/vil=2.0/0.8v, v oh /v ol =2.0/0.8v, output loading c l =... |
| Description |
4M x 64 DRAM DIMM(4M x 64 动RAM模块)
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| File Size |
384.74K /
20 Page |
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it Online |
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SIEMENS AG
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| Part No. |
Q67100-Q1074 HYB5118160BSJ-50
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| OCR Text |
... ns 15 cas to we delay time t cwd 31 C 35 C 45 C ns 15 column address to we delay time t awd 43 C 50 C 60 C ns 15 oe command hold time t oeh 13 C 15 C 20 C ns fast page mode cycle fast page mode cycle time t pc 35 C 40 C 45 C ns cas pr... |
| Description |
1M x 16-Bit Dynamic RAM 1M X 16 FAST PAGE DRAM, 50 ns, PDSO42
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| File Size |
256.71K /
24 Page |
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it Online |
Download Datasheet |
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