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				Alliance Semiconductor ...
Part No.	AS4C64M16D1-6TIN AS4C64M16D1-6TCN
OCR Text	...rade option changed -5(400mhz) to -6(333mhz) oct 2014 ...66 pin tsop ii - sstl - 2 co mpatible i/os - double data rate (ddr) - bidirecti...
Description	Programmable Burst
File Size	2,771.33K / 61 Page	View it Online	Download Datasheet

				SICK AG
Part No.	1072117
OCR Text	...accidents and preventing damage to the environment. we have extensive experience in a wide range of industries and understand their process...66) ? 8 (0.31) ? 75 (2.95) ? 25 (0.98) ? 175 (6.89) distance in m (feet) diameter in mm (inch) 1 0...
Description	PHOTOELECTRIC SENSORS
File Size	2,242.96K / 8 Page	View it Online	Download Datasheet

				Exar Corporation
Part No.	XR46084ESFTR-ADJ XR46084ECF-ADJ XR46084EHTR-ADJ
OCR Text	to minimize mechanical cost driver-on-board and chip-on-board available which minimize process fow and assembly cost high pf and low thd ...66 xr46084ehtr-c3 (3) 52 xr46084ehtr-d1 (3) 80 xr46084ehtr-d2 (3) 130 xr46084ehtr-d3 (3) 104 xr46084...
Description	Three Terminal Current Controller
File Size	88.63K / 3 Page	View it Online	Download Datasheet

				意法半导 STMicroelectronics ST Microelectronics
Part No.	TS831 TS831-3I TS831-4I TS831-5I TS831-3IP TS831-4IP TS831-5IP TS831-5ID TS831-5IZ TS831-5IDT TS831-4ID TS831-4IZ TS831-4IPT TS831-4IDT -TS831-3IZ
OCR Text	...ED RESET OPERATION FOR VCC DOWN TO 1V OPEN DRAIN OUTPUT COMPARATOR FAST RESPONSE TIME : 20s FOR A 10mV OVERDRIVE INTERNAL BUILT-IN HYSTERESI...66 4.66 200 12 800 1000 1300 100 1000 V mV A mV Typ. 4.35 4.66 4.70 V Max. Unit Vthd Vhys ICC VOL...
Description	MICROPOWER VOLTAGE SUPERVISOR RESET ACTIVE LOW
File Size	89.81K / 11 Page	View it Online	Download Datasheet

				GSI Technology
Part No.	GS840F18AT-8.5
OCR Text	to change without notice . for latest documentation see http://www.gsitechnology.com. preliminary gs840f18/32/36at-8/8.5/10/12 256k x 18, 1...66 65 64 63 62 61 60 59 58 57 56 55 54 53 52 51 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 2...
Description	8.5ns 256K x 18 4Mb sync burst SRAM
File Size	507.37K / 22 Page	View it Online	Download Datasheet

				NEC Corp. California Eastern Labs NEC[NEC]
Part No.	UPC8179TK UPC8179TK-E3
OCR Text	...mm) * SUPPLY VOLTAGE: VCC = 2.4 to 3.3 V * HIGH EFFICIENCY: PO(1dB) = +2.0 dBm TYP at f = 1.0 GHz PO(1dB) = +0.5 dBm TYP at f = 1.9 GHz PO(1...66 -112.50 -117.21 -121.34 -125.50 -129.41 MAG (lin) 0.000 0.001 0.003 0.004 0.004 0.005 0.005 0.006...
Description	SILICON MMIC LOW CURRENT AMPLIFIER FOR MOBILE COMMUNICATIONS
File Size	239.26K / 6 Page	View it Online	Download Datasheet

				Infineon Technologies A...
Part No.	PXAC192908FVV1R250
OCR Text	... applications in the 1930 to 1995 mhz frequency band. features include dual-path design, high gain and thermally-enhanced pack...66.3 1960 2.0 C j5.8 5.3 C j3.7 18.4 54.16 260.6 55.7 2.9 C j2.2 20.1 52.90 195.0 66.0 1990 3.2 C j6...
Description	Thermally-Enhanced High Power RF LDMOS FET 240 W, 28 V, 1930 ?1995 MHz
File Size	360.02K / 8 Page	View it Online	Download Datasheet

				Infineon Technologies A...
Part No.	PTFC260202FCV1R250 PTFC260202FCV1R0XTMA1 PTFC260202FCV1R250XTMA1
OCR Text	...ifer applications in the 2495 to 2690 mhz frequency band. manufactured with infneon's advanced ldmos process, this device pro...66 h = 30 mil ro / ro 4350 z source z load g 1 d 1 g 2 s d 2 ptfc260202fc data sheet 5 of...
Description	Thermally-Enhanced High Power RF LDMOS FET 25 W, 28 V, 2495 ?2690 MHz
File Size	336.86K / 9 Page	View it Online	Download Datasheet

				Infineon Technologies A...
Part No.	PTFC210202FCV1R250
OCR Text	...ifer applications in the 2110 to 2170 mhz frequency band. manufactured with infneon's advanced ldmos process, this device pro...66.6 load pull performance broadband circuit impedance frequency z source w z load w mhz r j...
Description	Thermally-Enhanced High Power RF LDMOS FET 28 W, 28 V, 1800 ?2200 MHz
File Size	575.39K / 8 Page	View it Online	Download Datasheet

				Infineon Technologies A...
Part No.	PXAC203302FVV1R250
OCR Text	...r applications in the 1880 to 2025 mhz frequency band. features include dual-path design, input matching, high gain and t...66.7 1900 2.94 C j6.93 1.31 C j2.40 18.5 52.5 176 54.4 2.82 C j1.21 21.2 50.1 102 65.5 1920 3.81 C j...
Description	Thermally-Enhanced High Power RF LDMOS FET 330 W, 28 V, 1880 ?2025 MHz
File Size	349.01K / 7 Page	View it Online	Download Datasheet

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