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IXYS[IXYS Corporation]
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Part No. |
IXFH22N55
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OCR Text |
...125 150
ID - Amperes
TJ - degrees C
Fig. 5 Drain Current vs. Case Temperature
25
Fig. 6 Temperature Dependence of Breakdown and Threshold Voltage
1.2
VGS(th)
BV/VG(th) - Normalized
20
1.1 1.0 0.9 0.8 0.7 0.6 0 25 50 ... |
Description |
CONN RCPT .100 50POS SNGL TIN HiPerFET Power MOSFET
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File Size |
68.21K /
4 Page |
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it Online |
Download Datasheet |
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IXYS[IXYS Corporation]
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Part No. |
IXFJ13N50
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OCR Text |
...
150
ID - Amperes
TJ - degrees C
Figure 3. RDS(on) normalized to 0.5 ID25 value
15.0
13N50
Figure 4. RDS(on) normalized to 0.5 ID25 value
1.2 1.1
VGS(th) BVDSS
BV/VG(th) - Normalized
-25 0 25 50 75 100 125 150
12.5... |
Description |
Discrete MOSFETs: HiPerFET Power MOSFETS
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File Size |
67.23K /
4 Page |
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it Online |
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IXYS[IXYS Corporation]
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Part No. |
IXFM13N50 IXFH13N50
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OCR Text |
...
150
ID - Amperes
TJ - degrees C
Fig. 5 Drain Current vs. Case Temperature
15.0
13N50
Fig. 6 Temperature Dependence of Breakdown and Threshold Voltage
1.2 1.1
VGS(th) BVDSS
BV/VG(th) - Normalized
-25 0 25 50 75 100 12... |
Description |
Discrete MOSFETs: HiPerFET Power MOSFETS
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File Size |
81.60K /
4 Page |
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it Online |
Download Datasheet |
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IXYS, Corp. IXYS[IXYS Corporation]
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Part No. |
IXFM6N90 IXFH6N100 IXFH6N90 IXFM6N100
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OCR Text |
...125 150
ID - Amperes
TJ - degrees C
7 6
Fig. 5 Drain Current vs. Case Temperature
1.2 1.1
Fig. 6 Temperature Dependence of Breakdown and Threshold Voltage
VGS(th) BVDSS
6N90
BV/VG(th) - Normalized
ID - Amperes
... |
Description |
N-Channel Enhancement Mode HiPerFET Power MOSFET(最大漏源击穿电000V,导通电2.0Ω的N沟道增强HiPerFET功率MOSFET) 6 A, 1000 V, 2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 Discrete MOSFETs: HiPerFET Power MOSFETS
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File Size |
76.62K /
4 Page |
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it Online |
Download Datasheet |
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Price and Availability
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