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LM2575 BB510 16080 MAX809T AN79M00 A8337 10T08ACW 100C0
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  200-1000 Datasheet PDF File

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    ST Microelectronics
Part No. BYT230PIV-1000 BYT231PIV-1000
OCR Text ... current tp = 10 ms sinusoidal 200 a t stg storage temperature range - 40 to + 150 c tj maximum operating junction temperature 150 c ab...1000 v v f (max) 1.8 v trr (max) 80 ns main product characteristics isotop tm (plastic) k2 a2 a1 k1...
Description FAST RECOVERY RECTIFIER DIODES

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    意法半导
Part No. BYT261PIV-1000
OCR Text ... t j = 100 c see fig. 11 200 ns di f /dt = -480a/ m s 120 i rm di f /dt = -240a/ m s 40 a di f /dt = -480a/ m s 44 turn-off switching...1000 2/5 im(a) 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 0 50 100 150 200 250 300 350 400 450 500 t ...
Description Fast Recovery Rectifier Diodes(快速恢复整流二极管)

File Size 288.61K  /  5 Page

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    V7803-1000 V7812-1000

CUI INC,
Part No. V7803-1000 V7812-1000
OCR Text ... 0.30 0.012 (3 PLCS) 5.08 0.200 3.21 0.126 units: mm(inches) pin tolerances: 0.10(0.004) general tolerances: 0.25(0.01) THERMAL DE...1000 series DESCRIPTION: DC switching regulator, non-isolated TYPICAL APPLICATION CIRCUIT Vin...
Description DC switching regulator, non-isolated

File Size 228.25K  /  4 Page

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    意法半导
Part No. BYT30P-1000
OCR Text ... current t p = 10ms sinusoidal 200 a p power dissipation t c = 85 c 60 w t stg t j storage and junction temperature range - 40 to +150 - ...1000 figure 3. non repetitive peak surge current versus overload duration figure 4. thermal impeda...
Description Fast Recovery Rectifier Diode(快速恢复整流二极管)

File Size 116.32K  /  5 Page

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    ST Microelectronics
Part No. BYT60P-1000 BYT261PIV-1000
OCR Text ... di f /dt = - 240 a/ m sv cc = 200 v i f = 60 a l p 0.05 m h tj = 100c (see fig. 13) 200 ns di f /dt = - 480 a/ m s 120 i rm maximum ...1000 / byt261piv-1000 2/7 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0 50 100 150 200 250 300 350...
Description FAST RECOVERY RECTIFIER DIODES

File Size 203.29K  /  7 Page

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    ST Microelectronics
Part No. BYT30P-1000
OCR Text ... current t p = 10ms sinusoidal 200 a p power dissipation t c = 85 c 60 w t stg t j storage and junction temperature range - 40 to +150 - ...1000 figure 3. non repetitive peak surge current versus overload duration figure 4. thermal impeda...
Description FAST RECOVERY RECTIFIER DIODE

File Size 116.86K  /  5 Page

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    Astrodyne, Inc.
Part No. PSP-1000 PSP-1000-15
OCR Text ...vp-p 150mvp-p 150mvp-p 150mvp-p 200 mvp-p 4.75?~?5.5v 10?~?13.2v 12?~?15v 13.5?~?18v 20?~?26.4v 24?~?30v 41?~?56v 6.0% 3.0% 2.0% 2.0% 1.0% 1...1000-spec???2005-09-13 rc+/rc-:?0?~?0.8v=power?on?;?4?~?10v=power?off???????????sink?current?<20ma o...
Description BAT,4-PK,D,NICAD,5000MAH,4.8V, RECHRG,6" LEADS,FIG 16
BAT,2-PK,D,NICAD,5000MAH,2.4V, RECHRG,6" LEADS,FIG 1

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    BYT230PIV-1000 BYT231PIV-1000

STMICROELECTRONICS
Part No. BYT230PIV-1000 BYT231PIV-1000
OCR Text ... current tp = 10 ms sinusoidal 200 a t stg storage temperature range - 40 to + 150 c tj maximum operating junction temperature 150 c ab...1000 v v f (max) 1.8 v trr (max) 80 ns main product characteristics isotop tm (plastic) k2 a2 a1 k1...
Description 30 A, 1000 V, SILICON, RECTIFIER DIODE

File Size 195.00K  /  5 Page

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    Agilent (Hewlett-Packard)
Part No. MSA-1000-GP4
OCR Text ...er +25 dbm junction temperature 200 c storage temperature C65 to 200 c thermal resistance [2,4] : q jc = 10 c/w part number ordering information part number devices per tray msa-1000-gp4 100 g p power gain (|s 21 | 2 ) f = 1.0 ghz db 8...
Description Cascadable Silicon Bipolar MMIC Amplifier

File Size 66.16K  /  4 Page

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