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  watts Datasheet PDF File

For watts Found Datasheets File :: 23780    Search Time::1.766ms    
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    PSM040B-1Y050 PSM065B-1Y240 PSM065B-1Y190 PSM065B-1Y360 PSM PSM060B-1Y150 PSM060B-1Y120 PSM065B-1Y480

Wall Industries,Inc.
Part No. PSM040B-1Y050 PSM065B-1Y240 PSM065B-1Y190 PSM065B-1Y360 PSM PSM060B-1Y150 PSM060B-1Y120 PSM065B-1Y480
OCR Text watts Single Output AC/DC Medical Power Supply FEATURES Open Frame Single Output Universal AC Input: 90~264VAC Output Voltages from 5 to 52VDC Over Voltage/ Over Load/ Short Circuit Protected 4(L) x 2(W) x 1.18(H) inches (101.6 x 50....
Description Open Frame 40~65 watts Single Output AC/DC Medical Power Supply

File Size 133.98K  /  2 Page

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    2EZ11D5 2EZ14D5 2EZ150D5 2EZ16D5 2EZ17D5 2EZ180D5 2EZ19D5 2EZ75D5 2EZ160D5 2EZ12D5 2EZ100D5 2EZ10D5 2EZ110D5 2EZ13D5 2EZ

EIC discrete Semiconduc...
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EIC[EIC discrete Semiconductors]
Electronics Industry Public Company Limited
EIC SEMICONDUCTOR INC
Part No. 2EZ11D5 2EZ14D5 2EZ150D5 2EZ16D5 2EZ17D5 2EZ180D5 2EZ19D5 2EZ75D5 2EZ160D5 2EZ12D5 2EZ100D5 2EZ10D5 2EZ110D5 2EZ13D5 2EZ140D5 2EZ82D5 2EZ91D5 2EZ9.1D5 2EZ5.1D5 2EZ27D5 2EZ120D5 2EZ130D5 2EZ4.3D5 2EZ15D5 2EZ 2EZ170D5 2EZ18D5 2EZ190D5 2EZ200D5 2EZ20D5 2EZ22D5 2EZ24D5 2EZ3.6D5 2EZ3.9D5 2EZ30D5 2EZ33D5 2EZ36D5 2EZ39D5 2EZ4.7D5 2EZ43D5 2EZ47D5 2EZ5.6D5 2EZ51D5 2EZ56D5 2EZ6.2D5 2EZ6.8D5 2EZ62D5 2EZ68D5 2EZ7.5D5 2EZ8.2D5 EICSEMICONDUCTORINC-2EZ16D5 EICSEMICONDUCTORINC-2EZ4.7D5 EZ140D5
OCR Text watts FEATURES : * Complete Voltage Range 3.6 to 200 Volts * High peak reverse power dissipation * High reliability * Low leakage current SILICON ZENER DIODES DO - 41 0.107 (2.7) 0.080 (2.0) 1.00 (25.4) MIN. 0.205 (5.2) 0.166...
Description    SILICON ZENER DIODES
CABLE RISER SHIELD 6COND 22AWG
CAP 3.3UF 50V 10% X7R AXIAL BULK S-MIL-PRF-39014
8 Character x 1 Line, 5 x 11 Dot Matrix Character
surface mount silicon Zener diodes 33 V, 2 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-41
surface mount silicon Zener diodes 30 V, 2 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-41
surface mount silicon Zener diodes 36 V, 2 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-41
surface mount silicon Zener diodes 16 V, 2 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-41
20 characters x 2 Lines, 5x7 Dot Matric Character and Cursor 39 V, 2 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-41
surface mount silicon Zener diodes 13 V, 2 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-41
surface mount silicon Zener diodes 43 V, 2 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-41
CONN EDGE CARD DUAL .8MM 40POS 17 V, 2 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-41
surface mount silicon Zener diodes 27 V, 2 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-41
surface mount silicon Zener diodes 120 V, 2 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-41

File Size 27.32K  /  2 Page

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    MRF6P21190HR606 MRF6P21190HR6

Freescale Semiconductor, Inc
Part No. MRF6P21190HR606 MRF6P21190HR6
OCR Text ...Volts, IDQ = 1900 mA, Pout = 44 watts Avg., Full Frequency Band, Channel Bandwidth = 3.84 MHz, PAR = 8.5 dB @ 0.01% Probability on CCDF. Power Gain -- 15.5 dB Drain Efficiency -- 26.5% IM3 @ 10 MHz Offset -- - 37 dBc in 3.84 MHz Channel Ban...
Description RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET

File Size 430.10K  /  12 Page

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    MRF6S19120H MRF6S19120HR3 MRF6S19120HSR3

Freescale Semiconductor, Inc
Part No. MRF6S19120H MRF6S19120HR3 MRF6S19120HSR3
OCR Text ...Volts, IDQ = 1000 mA, Pout = 19 watts Avg., Full Frequency Band, IS - 95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13) Channel Bandwidth = 1.2288 MHz. PAR = 9.8 dB @ 0.01% Probability on CCDF. Power Gain -- 15 dB Drain Efficiency -...
Description RF Power Field Effect Transistors

File Size 439.62K  /  12 Page

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    MRF6S21190H MRF6S21190HR3 MRF6S21190HSR3

Freescale Semiconductor, Inc
Part No. MRF6S21190H MRF6S21190HR3 MRF6S21190HSR3
OCR Text ...Volts, IDQ = 1600 mA, Pout = 54 watts Avg., Full Frequency Band, 3GPP Test Model 1, 64 DPCH with 50% Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. Power Gain -- 16 dB Drain Efficiency -- 29% ...
Description RF Power Field Effect Transistors

File Size 413.58K  /  11 Page

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    MRF6V2010NBR1 MRF6V2010NR1 MRF6V2010NR108

Freescale Semiconductor, Inc
Part No. MRF6V2010NBR1 MRF6V2010NR1 MRF6V2010NR108
OCR Text ...0 Volts, IDQ = 30 mA, Pout = 10 watts Power Gain -- 23.9 dB Drain Efficiency -- 62% * Capable of Handling 10:1 VSWR, @ 50 Vdc, 220 MHz, 10 watts CW Output Power Features * Integrated ESD Protection * Excellent Thermal Stability * Facilitate...
Description RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

File Size 1,005.32K  /  21 Page

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    EMC TECHNOLOGY INC
Part No. TT3040 TT3045 TT3050
OCR Text ... 1.30 max. 1.1.6 input power: 2 watts cw. 1.1.6.1 full rated power to 125 c, derated linearly to 0 watts at 150 c. 1.1.6.2 peak power, 50 watts for 10us pulse width @ 1% duty cycle. 1.2 mechanical: 1.2.1 outline dwg: see sheet 2. 1.2.2 w...
Description 0 MHz - 12400 MHz RF/MICROWAVE FIXED ATTENUATOR

File Size 132.73K  /  2 Page

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    Pasternack Enterprises
Part No. PE7396-9
OCR Text ...rass tri-metal body rated to 2 watts up to 3 ghz pe7396-9 pe7396-9 pe7396-9 rev 1.0 9 db fixed attenuator, 75 ohm f male to 75 ohm f female brass tri-metal body rated to 2 watts up to 3 ghz technical data sheet 2 compliance certifc...
Description 9dB Fixed Attenuator

File Size 193.27K  /  2 Page

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    MRF6V4300NBR1 MRF6V4300NR1

Freescale Semiconductor, Inc
Part No. MRF6V4300NBR1 MRF6V4300NR1
OCR Text ...Volts, IDQ = 900 mA, Pout = 300 watts, f = 450 MHz Power Gain -- 22 dB Drain Efficiency -- 60% * Capable of Handling 10:1 VSWR, @ 50 Vdc, 450 MHz, 300 watts CW Output Power Features * Qualified Up to a Maximum of 50 VDD Operation * Integrat...
Description RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

File Size 543.31K  /  15 Page

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    MW4IC2020GNBR1 MW4IC2020NBR1

Freescale Semiconductor, Inc
Part No. MW4IC2020GNBR1 MW4IC2020NBR1
OCR Text ...00 mA, IDQ3 = 300 mA, Pout = 20 watts PEP, Full Frequency Band Power Gain -- 29 dB IMD -- - 32 dBc Drain Efficiency -- 26% (at 1805 MHz) and 20% (at 1990 MHz) Driver Applications * Typical GSM EDGE Performance: VDD = 26 Volts, IDQ1 = 80 mA,...
Description RF LDMOS Wideband Integrated Power Amplifiers

File Size 623.70K  /  16 Page

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