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  10.00-10.25 Datasheet PDF File

For 10.00-10.25 Found Datasheets File :: 141241    Search Time::4.594ms    
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    2SC5026

PANASONIC[Panasonic Semiconductor]
Part No. 2SC5026
OCR Text ... 80 80 5 120 60 0.15 0.85 120 10 *2 2.50.1 +0.25 Unit A V V V 340 0.3 1.2 V V MHz 20 pF Pulse measurement *1h FE Rank classification R 120 ~ 240 S 170 ~ 340 Rank hFE1 1 Transistor PC -- Ta ...
Description Silicon NPN epitaxial planer type(For low-frequency output amplification)

File Size 36.23K  /  2 Page

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    2SC5051

HITACHI[Hitachi Semiconductor]
Part No. 2SC5051
OCR Text ... 0.65 11.0 14.0 14.5 1.1 Max -- 10 1 10 250 1.15 -- -- -- 2.0 pF GHz dB dB dB Unit V A mA A Test conditions I C = 10 A, IE = 0 VCB = 12 V, I...00 Hitachi Europe Ltd. Electronic Components Group. Whitebrook Park Lower Cookham Road Maidenhead Be...
Description Silicon NPN Epitaxial

File Size 23.89K  /  5 Page

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    2SC5063

PANASONIC[Panasonic Semiconductor]
Part No. 2SC5063
OCR Text 10.00.3 1.50.1 8.50.2 6.00.5 3.40.3 Unit: mm 1.00.1 s Features q q q q 1.5max. 1.1max. High-speed switching High collector to base voltage VCBO Wide area of safe operation (ASO) N type package enabling direct soldering of ...
Description Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching)

File Size 60.70K  /  3 Page

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    2SC5071

SANKEN[Sanken electric]
Part No. 2SC5071
OCR Text ...C IB PC Tj Tstg 2SC5071 500 400 10 12(Pulse24) 4 100(Tc=25C) 150 -55 to +150 Unit V V V A A W C C Application : Switching Regulator and General Purpose External Dimensions MT-100(TO3P) 5.00.2 15.60.4 9.6 2.0 1.8 4.80.2 2.00.1 sElectr...
Description Silicon NPN Triple Diffused Planar Transistor(Switching Regulator and General Purpose)

File Size 23.88K  /  1 Page

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    2SC5079

HITACHI[Hitachi Semiconductor]
Part No. 2SC5079
OCR Text ... -- -- -- 120 0.3 12 17 1.6 Max 10 1 10 160 0.8 -- 20 2.5 pF GHz dB dB Unit A mA A Test conditions VCB = 15 V, IE = 0 VCE = 8 V, RBE = VEB ...00 Hitachi Europe Ltd. Electronic Components Group. Whitebrook Park Lower Cookham Road Maidenhead Be...
Description Silicon NPN Transistor
Silicon NPN Epitaxial

File Size 24.20K  /  5 Page

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    2SC5081

HITACHI[Hitachi Semiconductor]
Part No. 2SC5081
OCR Text ... fT PG NF Min 15 -- -- -- 50 -- 10.5 15 -- Typ -- -- -- -- 90 0.4 13.5 18 1.1 Max -- 1 1 10 160 0.75 -- -- 2.0 pF GHz dB dB Unit V A mA A Te...00 Hitachi Europe Ltd. Electronic Components Group. Whitebrook Park Lower Cookham Road Maidenhead Be...
Description Silicon NPN Epitaxial

File Size 24.33K  /  5 Page

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    2SC829 2SC829B 2SC829C

http://
PANASONIC[Panasonic Semiconductor]
Panasonic Corporation
Part No. 2SC829 2SC829B 2SC829C
OCR Text ...V V V mA mW C C 13.50.5 5.10.2 0.45 -0.1 1.27 +0.2 0.45 -0.1 1.27 +0.2 123 2.30.2 2.540.15 1:Emitter 2:Collector 3:Base JEDEC:TO-92 EIAJ:SC-43A s Electrical Characteristics Parameter Collector to base volt...
Description Silicon NPN epitaxial planer type(For high-frequency amplification)
TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 30MA I(C) | TO-92
Low-Power, Single/Dual-Voltage µP Reset Circuits with Capacitor-Adjustable Reset Timeout Delay

File Size 54.87K  /  3 Page

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    2SD1101

HITACHI[Hitachi Semiconductor]
Part No. 2SD1101
OCR Text ... V V A Test conditions I C = 10 A, IE = 0 I C = 1 mA, RBE = I E = 10 A, IC = 0 VCB = 20 V, IE = 0 VCE = 1 V, IC = 0.15 A*2 I C = 0.5 A, ...00 Hitachi Europe Ltd. Electronic Components Group. Whitebrook Park Lower Cookham Road Maidenhead Be...
Description Silicon NPN Epitaxial

File Size 23.31K  /  5 Page

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    2SD1113 2SD1113K

HITACHI[Hitachi Semiconductor]
Part No. 2SD1113 2SD1113K
OCR Text ... Tstg 1 Ratings 300 300 7 6 10 40 150 -55 to +150 Unit V V V A A W C C 2SD1113(K) Electrical Characteristics (Ta = 25C) Item Col...00 Hitachi Europe Ltd. Electronic Components Group. Whitebrook Park Lower Cookham Road Maidenhead Be...
Description Silicon NPN Triple Diffused

File Size 31.56K  /  5 Page

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    2SD1119

Fuji Electric
Panasonic Semiconductor
Part No. 2SD1119
OCR Text ...aturation voltage VCE(sat) (V) 10 3 1 0.3 Ta=75C 0.1 0.03 0.01 0.003 0.001 0.01 0.03 25C -25C VBE(sat) -- IC Base to emitter saturation voltage VBE(sat) (V) IC/IB=30 100 30 10 3 25C 1 0.3 0.1 0.03 0.01 0.01 0.03 Ta=-25C 75C IC/IB=30 6...
Description Silicon NPN epitaxial planer type(For low-frequency power amplification0

File Size 37.58K  /  2 Page

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