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New Jersey Semi-Conductor Products, Inc.
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| Part No. |
2N8768
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| OCR Text |
...um rating* 2n6765 2n6766 symbol vdss vdgr vas tj, t8ts tl characteristic drain to source voltage drain to gate voltage rss-1 msi qate to source voltage operating junction and storage temperatures maximum lead temperature tor soldering purpo... |
| Description |
N-Channel Power MOSFETs 30 A,150 V/200 V
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| File Size |
88.03K /
2 Page |
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it Online |
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TOSHIBA
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| Part No. |
TK11A50D
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| OCR Text |
... ? ? ? ? ? ? ? ? ? ???= v dd b vdss b vdss 2 il 2 1 as test circuit waveform i ar b vdss v dd v ds ? 15 v 15 v e as ? t ch channel temperature (initial) t ch (c) avalanche energy e as (mj) r th ? t w pu... |
| Description |
Power MOSFET (N-ch 500V<vdss≤700V)
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| File Size |
230.74K /
6 Page |
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it Online |
Download Datasheet |
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Silan Microelectronics
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| Part No. |
SVD8N80T
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| OCR Text |
...in -source breakdown voltage b vdss vgs=0v, id=250a 800 -- -- v drain-source leakage current i dss vds=800v, vgs=0v -- -- 10 a gate-source leakage current i gss vgs=30v, vds=0v -- -- 100 na gate threshold voltage v... |
| Description |
800V N-CHANNEL MOSFET
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| File Size |
560.64K /
8 Page |
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it Online |
Download Datasheet |
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SL
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| Part No. |
SVF2N60F SVF2N60D SVF2N60T
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| OCR Text |
...in -source breakdown voltage b vdss v gs =0v, i d =250a 600 -- -- v drain-source leakage current i dss v ds =600v, v gs =0v -- -- 1.0 a gate-source leakage current i gss v gs =30v, v ds =0v -- -- 100 na gate threshold volta... |
| Description |
600V N-CHANNEL MOSFET
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| File Size |
591.29K /
10 Page |
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it Online |
Download Datasheet |
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| Part No. |
TK40A10J1
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| OCR Text |
...est circuit wave form i ar b vdss v dd v ds r g = 1 v dd = 25 v, l = 200 h ? ? ? ? ? ? ? ? ? ???= v dd b vdss b vdss 2 il 2 1 as avalanche energy e as (mj) channel temperature (initial) t ch (c) e as ? t ch... |
| Description |
40 A, 100 V, 0.017 ohm, N-CHANNEL, Si, POWER, MOSFET
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| File Size |
209.48K /
6 Page |
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it Online |
Download Datasheet |
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TOSHIBA
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| Part No. |
TK12A53D
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| OCR Text |
...gle pulse ?15 v 15 v i ar b vdss v dd v ds r g = 25 v dd = 90 v, l = 4.5 mh ? ? ? ? ? ? ? ? ? ???= v dd b vdss b vdss 2 il 2 1 as r th ? t w e as ? t ch normalized transient thermal impedance r th (t) /r th (ch... |
| Description |
Power MOSFET (N-ch 500V<vdss≤700V)
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| File Size |
175.99K /
6 Page |
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it Online |
Download Datasheet |
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| Part No. |
2SK3567
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| OCR Text |
...est circuit wave form i ar b vdss v dd v ds r g = 25 ? v dd = 90 v, l = 28.8mh ? ? ? ? ? ? ? ? ? ? ? ? = v dd b vdss b vdss 2 i l 2 1 as drain-source voltage v ds (v) safe operating area single nonrepetit... |
| Description |
3.5 A, 600 V, 2.2 ohm, N-CHANNEL, Si, POWER, MOSFET
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| File Size |
222.92K /
6 Page |
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it Online |
Download Datasheet |
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