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  hemt Datasheet PDF File

For hemt Found Datasheets File :: 1566    Search Time::5.375ms    
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    EUDYNA[Eudyna Devices Inc]
Part No. FHC40LG
OCR Text hemt FEATURES * Low Noise Figure: 0.3dB (Typ.)@f=4GHz * High Associated Gain: 15.5dB (Typ.)@f=4GHz * Lg 0.15m, Wg = 280m * Gold Gate Metallization for High Reliability * Cost Effective Ceramic Microstrip (SMT) Package * Tape and Reel Avai...
Description Super Low Noise hemt

File Size 82.08K  /  5 Page

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    FLC087XP

Eudyna Devices Inc
Part No. FLC087XP
OCR Text hemt Chips FEATURES * * * * High Output Power: P1dB = 28.5dBm(Typ.) High Gain: G1dB = 7.0dB(Typ.) High PAE: add = 31.5%(Typ.) Proven Reliability Drain DESCRIPTION The FLC087XP chip is a power GaAs FET that is designed for general pu...
Description GaAs FET & hemt Chips

File Size 53.73K  /  4 Page

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    FLK017XP

Eudyna Devices Inc
Part No. FLK017XP
OCR Text hemt Chips FEATURES * * * * High Output Power: P1dB = 20.5dBm(Typ.) High Gain: G1dB = 8.0dB(Typ.) High PAE: add = 26%(Typ.) Proven Reliability Source Gate Drain DESCRIPTION The FLK017XP chip is a power GaAs FET that is designed for...
Description GaAs FET & hemt Chips

File Size 54.22K  /  4 Page

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    FLK027XP FLK027XV

Eudyna Devices Inc
Part No. FLK027XP FLK027XV
OCR Text hemt Chips FEATURES * * * * High Output Power: P1dB = 24.0dBm(Typ.) High Gain: G1dB = 7.0dB(Typ.) High PAE: add = 32%(Typ.) Proven Reliability Source Gate Drain DESCRIPTION The FLK027XP, and FLK027XV chip is a power GaAs FET that i...
Description GAAS FET & hemt CHIPS

File Size 93.17K  /  4 Page

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    FLK107XV

Eudyna Devices Inc
Part No. FLK107XV
OCR Text hemt Chips FEATURES * * * * High Output Power: P1dB = 30.0dBm(Typ.) High Gain: G1dB = 6.5dB(Typ.) High PAE: add = 31%(Typ.) Proven Reliability Drain Drain Drain Drain DESCRIPTION The FLK107XV chip is a power GaAs FET that i...
Description GaAs FET & hemt Chips

File Size 58.38K  /  4 Page

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    FLX257XV

Eudyna Devices Inc
Part No. FLX257XV
OCR Text hemt Chips FEATURES * * * * High Output Power: P1dB = 33.5dBm(Typ.) High Gain: G1dB = 7.5dB(Typ.) High PAE: add = 31%(Typ.) Proven Reliability 95 40 (Unit: m) DESCRIPTION The FLX257XV chip is a power GaAs FET that is designed ...
Description GAAS FET & hemt CHIPS

File Size 54.72K  /  4 Page

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    FSX027X

Eudyna Devices Inc
Part No. FSX027X
OCR Text hemt Chips FEATURES * Medium Power Output: P1dB=24.5dBm(Typ.)@8.0GHz * High Power Gain: G1dB=10dB(Typ.)@8.0GHz * Proven Reliability DRAIN DESCRIPTION The FSX027X is a general purpose GaAs FET designed for medium power applications up ...
Description GAAS FET & hemt CHIPS

File Size 52.50K  /  4 Page

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    HMC-AUH31711

Hittite Microwave Corporation
Part No. HMC-AUH31711
OCR Text ...3343 or apps@hittite.com gaas hemt mmic medium power amplifier, 81 - 86 ghz v04.0511 general description features functional diagram gain: 22 db p 1db: +17.5 dbm s upply voltage: +4v 50 o hm m atched i nput/ o utput die s ize: 2.65 ...
Description GaAs hemt MMIC MEDIUM POWER AMPLIFIER, 81 - 86 GHz

File Size 325.82K  /  6 Page

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    HMC-AUH31811

Hittite Microwave Corporation
Part No. HMC-AUH31811
OCR Text ...3343 or apps@hittite.com gaas hemt mmic medium power amplifier, 71 - 76 ghz v06.0511 general description features functional diagram gain: 24 db p 1db: +17.5 dbm s upply voltage: +4v 50 o hm m atched i nput/ o utput die s ize: 2.65 ...
Description GaAs hemt MMIC MEDIUM POWER AMPLIFIER, 71 - 76 GHz

File Size 329.28K  /  6 Page

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    TGA2576-FL-15

TriQuint Semiconductor
Part No. TGA2576-FL-15
OCR Text hemt power amplifier preliminary data sheet: rev a 08/25/11 - 1 of 11 - disclaimer: sub j ect to chan g e without notice ? 2011 triquint semiconductor, inc. connecting the digital world to the global network ? applic...
Description 2.5 to 6 GHz GaN hemt Power Amplifier

File Size 259.92K  /  11 Page

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