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For fixture Found Datasheets File :: 12731 Search Time::1.406ms
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				Freescale Semiconductor, Inc Freescale Semiconductor, In...
Part No.	MWE6IC9100GNR1 MWE6IC9100NBR1 MWE6IC9100NR1 MWE6IC9100NR108
OCR Text	...e (VDS = 26 Vdc, ID = 120 mAdc) fixture Gate Quiescent Voltage (VDD = 26 Vdc, ID = 120 mAdc, Measured in Functional Test) VGS(th) VGS(Q) VGG(Q) 1.5 -- 6 2 2.7 9.4 3.5 -- 12 Vdc Vdc Vdc IDSS IDSS IGSS -- -- -- -- -- -- 10 1 10 Adc Adc Adc Sy...
Description	RF LDMOS Wideband Integrated Power Amplifiers
File Size	846.86K / 23 Page	View it Online	Download Datasheet

				LAMBDA[DENSEI-LAMBDA] Electronic Theatre Controls, Inc.
Part No.	JWS300-12 JWS300-15 JWS300-24 JWS300-3 JWS300-48 JWS300-5 JWS50 JWS50-12 JWS50-15 JWS50-24 JWS50-3 JWS50-48 JWS50-5 JWS100-12 JWS100-15 JWS75-5 JWS150-12 JWS150-15 JWS150-24 JWS150-3 JWS150-48 JWS150-5 JWS100-24 JWS100-3 JWS100-48 JWS100-5 JWS600-12 JWS600-15 JWS600-24 JWS600-3 JWS600-48 JWS600-5 JWS75-12 JWS75-15 JWS75-24 JWS75-3 JWS75-48
OCR Text	... P134 Recommended Power Supply fixture P198 (Unit: mm) JWS50 (50W connector type) VOLTAGE ADJUSTMENT REMOTE ON/OFF CONTROL (OPTION) COVER (OPTION) OUTPUT CONNECTOR 2-M3 MOUNTING HOLES (DEPTH 6mm MAX) INPUT CONNECTOR ...
Description	Single output 50W ~ 600W Aluminum Electrolytic Radial Lead Long Life Capacitor; Capacitance: 2200uF; Voltage: 16V; Case Size: 18x35.5 mm; Packaging: Bulk 单输0600W
File Size	345.01K / 5 Page	View it Online	Download Datasheet

				Infineon Technologies AG
Part No.	PTFA082201E09 PTFA082201F
OCR Text	...aracterization in Infineon test fixture) VDD = 30 V, IDQ = 1950 mA, POUT = 55 W average 1 = 884 MHz, 2 = 894 MHz, 3GPP signal, channel bandwidth = 3.84 MHz, peak/average = 8.1 dB @ 0.01% CCDF Characteristic Gain Drain Efficiency Interm...
Description	Thermally-Enhanced High Power RF LDMOS FETs 220 W, 869 ??894 MHz Thermally-Enhanced High Power RF LDMOS FETs 220 W, 869 ?894 MHz
File Size	342.39K / 10 Page	View it Online	Download Datasheet

				Infineon Technologies AG
Part No.	PTFB211501E PTFB211501F
OCR Text	...ements (tested in Infineon test fixture) VDD = 30 V, IDQ = 1.2 A, POUT = 40 W AVG, = 2170 MHz, 3GPP signal, channel bandwidth = 3.84 MHz, peak/average = 8.5 dB @ 0.01% CCDF Characteristic Gain Drain Efficiency Intermodulation Distorti...
Description	Thermally-Enhanced High Power RF LDMOS FETs 150 W, 2110 鈥?2170 MHz
File Size	352.84K / 13 Page	View it Online	Download Datasheet

				Agilent(Hewlett-Packard) http://
Part No.	HDNS-2100001 ADNS-2051 HDNS-2100 HDNS-2200 HDNS-2200001 ADNK-2052
OCR Text	...solder process utilizing solder fixture. The solder fixture is needed to protect the sensor during the solder process. The fixture should be designed to expose the sensor leads to solder while shielding the optical aperture from direct sold...
Description	Solid-State Optical Mouse Sensor
File Size	724.14K / 51 Page	View it Online	Download Datasheet

				Infineon Technologies AG
Part No.	PTFA070601E PTFA070601F
OCR Text	...aracterization in Infineon test fixture) VDD = 28 V, IDQ = 600 mA, POUT = 12 W AVG, = 760 MHz Characteristic Intermodulation Distortion Gain Drain Efficiency Symbol IMD Gps Min -- -- -- Typ -37 19 29 Max -- -- -- Un...
Description	Thermally-Enhanced High Power RF LDMOS FETs 60 W, 725 鈥?770 MHz
File Size	247.50K / 10 Page	View it Online	Download Datasheet

				Anaren Microwave http://
Part No.	XC0900M-03P XC1900M-03P XC2100M-03P XC2500M-03P XC3500M-03P XC0900M-03S XC1900M-03S XC2100M-03S XC2500M-03S XC3500M-03S XC0900M-05P XC1900M-05P XC2100E-03P XC2100E-03S XC2100E-05P XC2100E-05S XC2100E-10P XC2100E-10S XC2100E-20P XC2100E-20S XC2100E-30P XC2100E-30S XC0450B-03P XC0450B-03S XC0450B-05P XC0450B-05S XC0450B-10P XC0450B-10S XC0450B-20P XC0450B-20S XC0450B-30P XC0450B-30S XC0900M-10P XC1900M-10P XC2100M-10P XC2500M-10P XC3500M-10P XC0900M-10S XC1900M-10S XC2100M-10S XC2500M-10S XC3500M-10S XC0900M-30P XC1900M-30P XC2100M-30P XC2500M-30P XC3500M-30P XC0900M-30S XC1900M-30S XC2100M-30S XC2500M-30S XC3500M-30S XC2100A-03P XC2100A-03S XC2100A-05P XC2100A-05S XC2100A-10P XC2100A-10S XC2100A-20 XC2100A-20P XC2100A-20S XC2100A-30P XC2100A-30S XC2100B-03P XC2100B-03S XC2100B-05P XC2100P-30P XC2100P-30S XC3500A-03P XC3500A-03S XC3500A-05P XC3500A-05S XC3500A-10P XC3500A-10S XC3500A-20P XC3500A-20S XC3500A-30P XC3500A-30S XC2500L-03P XC2500L-03S XC2500L-05P XC2500L-05S XC2500L-10P XC2500L-10S XC2500L-20S XC0450M-03P XC0450M-03S XC0450M-05P XC0450M-05S XC3500L-03P XC3500L-03S XC3500L-05P XC3500L-05S XC3500L-10P XC3500L-10S XC1900M-05S XC0900M-20P XC0450A-03S XC2500M-05P XC3500M-05P X
OCR Text	...plers require the use of a test fixture for verification of RF performance. This test fixture is designed to evaluate the coupler in the same environment that is recommended for installation. Enclosed inside the test fixture, is a circuit b...
Description	20 dB Directional Coupler
File Size	572.63K / 22 Page	View it Online	Download Datasheet

				Freescale Semiconductor, Inc
Part No.	MRF8S23120H MRF8S23120HR3 MRF8S23120HSR3
OCR Text	...al Tests (1) (In Freescale Test fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 800 mA, Pout = 28 W Avg., f = 2300 MHz, Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84...
Description	RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs
File Size	442.18K / 14 Page	View it Online	Download Datasheet

				Freescale Semiconductor, Inc
Part No.	MW6IC1940GNBR1
OCR Text	...le Wideband 1920--2000 MHz Test fixture, 50 ohm system) VDD = 28 Vdc, IDQ1 = 200 mA, IDQ2 = 440 mA, Pout = 4.5 W Avg., f1 = 1922.5 MHz, f2 = 1932.5 MHz, 2--Carrier W--CDMA, 3.84 MHz Channel Bandwidth @ 5 MHz Offset. IM3 measured in 3.84 MHz...
Description	RF LDMOS Wideband Integrated Power Amplifier
File Size	845.42K / 17 Page	View it Online	Download Datasheet

				Freescale Semiconductor, Inc Freescale Semiconductor, In...
Part No.	MW6IC2015GNBR1 MW6IC2015NBR108
OCR Text	... Freescale 1930 - 1990 MHz Test fixture, 50 ohm system) VDD = 26 Vdc, IDQ1 = 100 mA, IDQ2 = 170 mA, Pout = 15 W PEP, f1 = 1930 MHz, f2 = 1930.1 MHz, Two - Tone CW Power Gain Power Added Efficiency Intermodulation Distortion Input Return Los...
Description	RF LDMOS Wideband Integrated Power Amplifiers
File Size	1,117.72K / 28 Page	View it Online	Download Datasheet

For fixture Found Datasheets File :: 12731 Search Time::1.406ms
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