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Powerex, Inc.
POWEREX[Powerex Power Semiconductors]
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| Part No. |
CM600E2Y-34H
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| OCR Text |
... VGE = 0V IE = 600A die / dt = -1200a / s Junction to case, IGBT part Junction to case, FWDi part Case to fin, conductive grease applied (Per 1/2 module) IF = 600A, Clamp diode part IF = 600A dif / dt = -1200a / s, Clamp diode part Junction... |
| Description |
HIGH POWER SWITCHING USE INSULATED TYPE 600 A, 1700 V, N-CHANNEL IGBT
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| File Size |
44.60K /
4 Page |
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it Online |
Download Datasheet
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MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
Powerex, Inc.
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| Part No. |
CM600HA-28H
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| OCR Text |
...tf trr Qrr IE = 600A, diE/dt = -1200a/s IE = 600A, diE/dt = -1200a/s VCC = 800V, IC = 600A, VGE1 = VGE2 = 15V, RG = 2.1 VGE = 0V, VCE = 10V Test Conditions Min. - - - - - - - - - Typ. - - - - - - - - 6.0 Max. 120 42 24 350 700 500 500 300 -... |
| Description |
High Voltage Insulated Gate Bipolar Transistor (HVIGBT) Modules
HIGH POWER SWITCHING USE INSULATED TYPE 大功率开关使用绝缘型
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| File Size |
48.90K /
4 Page |
View
it Online |
Download Datasheet |
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POWEREX[Powerex Power Semiconductors]
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| Part No. |
CM600HA-28H
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| OCR Text |
...tf trr Qrr IE = 600A, diE/dt = -1200a/s IE = 600A, diE/dt = -1200a/s VCC = 800V, IC = 600A, VGE1 = VGE2 = 15V, RG = 2.1 VGE = 0V, VCE = 10V, f = 1MHz Test Conditions Min. - - - - - - - - - Typ. - - - - - - - - 6.0 Max. 120 42 24 350 700 500... |
| Description |
Single IGBTMOD 600 Amperes/1400 Volts
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| File Size |
54.24K /
4 Page |
View
it Online |
Download Datasheet |
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MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
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| Part No. |
CM600HA-5F
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| OCR Text |
...stive Load IE = 600A, diE/dt = -1200a/s IE = 600A, diE/dt = -1200a/s VGE = 0V, VCE = 10V Test Conditions Min. -- -- -- -- -- -- -- -- -- Typ. -- -- -- -- -- -- -- -- 9.5 Max. 165 7.5 5.6 1000 4000 1000 500 300 -- Units nF nF nF ns ns ns ns ... |
| Description |
HIGH POWER SWITCHING USE INSULATED TYPE
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V
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| File Size |
45.01K /
4 Page |
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it Online |
Download Datasheet |
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POWEREX[Powerex Power Semiconductors]
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| Part No. |
CM600HA-5F
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| OCR Text |
...stive Load IE = 600A, diE/dt = -1200a/ms IE = 600A, diE/dt = -1200a/ms VGE = 0V, VCE = 10V Test Conditions Min. -- -- -- -- -- -- -- -- -- Typ. -- -- -- -- -- -- -- -- 9.5 Max. 165 7.5 5.6 1000 4000 1000 500 300 -- Units nF nF nF ns ns ns n... |
| Description |
Trench Gate Design Single IGBTMOD600 Amperes/250 Volts
Trench Gate Design Single IGBTMOD 600 Amperes/250 Volts
Trench Gate Design Single IGBTMOD⑩ 600 Amperes/250 Volts
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| File Size |
51.12K /
4 Page |
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it Online |
Download Datasheet |
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Semikron
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| Part No. |
SKIIP2003GB171-4DW
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| OCR Text |
...
typ.
max.
Units
IC = 1200a, Tj = 25 (125)C; 2,8 (3,2) 3,3 V - measured at terminal VCEO Tj = 25 (125) C; at terminal 1,5 (1,6) 1,7 (1,8) V - rCE Tj = 25 (125) C; at terminal 1,1 (1,4) 1,3 (1,7) - m ICES VGE=0,VCE=VCES,Tj=25(125) ... |
| Description |
SKiiP 3 - SK integrated intelligent Power 2-pack
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| File Size |
89.51K /
2 Page |
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it Online |
Download Datasheet |
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Price and Availability
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