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SANYO
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Part No. |
2SC6024
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OCR Text |
...1.007 5.762 141.1m 181.0f 2.295 11.54 1 3.43 21.00m 1.800f 1.24 2.86 100.0 1.254 1.297 2.552 0 1.11 3 98.40f 10 100.0m 4.500p S F V eV A V A A V A A Unit A Parameter XTF VTF ITF PTF CJC VJC MJC XCJC TR FC CJS VJS MJS Lfc Lwb Lfb Lwe Lfe... |
Description |
UHF to C Band Low-Noise Amplifier and OSC Applications
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File Size |
60.02K /
16 Page |
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it Online |
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SANYO
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Part No. |
2SC6023
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OCR Text |
...ax 1.0 1 80 14.5 18 9.5 22 0.18 11 14 1.2 160
Unit A A GHz GHz pF dB dB dB
NF
Marking : NF
Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely h... |
Description |
NPN Epitaxial Planar Silicon Transistor UHF to C Band Low-Noise Amplifier and OSC Applications
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File Size |
63.43K /
16 Page |
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it Online |
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INTERSIL[Intersil Corporation]
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Part No. |
HFA310205 HFA3102BZ HFA3102BZ96 HFA3102B96 HFA3102
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OCR Text |
...A3102 (SOIC) TOP VIEW
14 13 12 11 10 9 8
* Wireless Communication Systems * Radio and Satellite Communications * Fiber Optic Signal Proc...0.25W Maximum Junction Temperature (Die) . . . . . . . . . . . . . . . . . . . . 175C Maximum Juncti... |
Description |
Dual Long-Tailed Pair Transistor Array
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File Size |
203.76K /
8 Page |
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it Online |
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Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor]
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Part No. |
MGF0910A 0910A
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OCR Text |
...Hz 10 - - Limits Typ - 1.5 - 38 11 45 - Max 5.0 - -5 - - - 5.5 Unit A S V dBm dB % C/W
Linear power gain *2 Power added efficiency at P1dB Thermal resistance *1 Vf method
*1:Channel to case *2:Pin=22dBm
Nov. 97
MITSUBISHI SEMICO... |
Description |
MITSUBISHI SEMICONDUCTOR (GaAs FET) L, S BAND POWER GaAs FET L S BAND POWER GaAs FET From old datasheet system
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File Size |
25.38K /
3 Page |
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it Online |
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Price and Availability
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