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  optimos-t Datasheet PDF File

For optimos-t Found Datasheets File :: 702    Search Time::3.297ms    
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    IPP100N04S2-04 IPB100N04S2-04 SP0002-19061 SP0002-19056

Infineon Technologies AG
Part No. IPP100N04S2-04 IPB100N04S2-04 SP0002-19061 SP0002-19056
OCR Text OptiMOS(R) Power-Transistor Features * N-channel - Enhancement mode * Automotive AEC Q101 qualified * MSL1 up to 260C peak reflow * 175C op...T j=25 C, unless otherwise specified Parameter Continuous drain current1) Symbol ID Conditions T C=2...
Description OptiMOSPower-Transistor 的OptiMOS㈢功率晶体管
OptiMOS? Power-Transistor
OptiMOS㈢ Power-Transistor
100 A, 40 V, 0.0036 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB GREEN, PLASTIC, TO-220, 3 PIN

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    Infineon
Part No. SPI80N03S2L-06
OCR Text OptiMOS(R) Buck converter series Feature *N-Channel Product Summary VDS RDS(on) max. SMD version ID P- TO262 -3-1 P- TO263 -3-2 30 ...T jmax2) Reverse diode dv/dt IS=80A, VDS=24V, di/dt=200A/s, Tjmax=175C EAR dv/dt 15 6 kV/s ...
Description Low Voltage MOSFETs - OptiMOS Power MOSFET, 30V, TO-262, RDSon = 6.2mOhm, 80A, LL

File Size 167.14K  /  8 Page

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    Infineon
Part No. SPI80N03S2L-05
OCR Text OptiMOS(R) Power-Transistor Feature * N-Channel Product Summary VDS RDS(on) ID P- TO263 -3-2 30 5.2 80 P- TO220 -3-1 V m A *...T j , Tstg 320 325 16 6 20 167 -55... +175 55/175/56 kV/s V W C mJ Avalanche energy, single pu...
Description Low Voltage MOSFETs - OptiMOS Power MOSFET, 30V, TO-262, RDSon = 5.2mOhm, 80A, LL

File Size 520.57K  /  8 Page

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    Infineon
Part No. SPI80N03S2L-04
OCR Text OptiMOS(R) Buck converter series Feature * N-Channel Product Summary VDS RDS(on) max. SMD version ID P- TO263 -3-2 30 3.9 80 P- TO...T j , Tstg 320 380 18 6 20 188 -55... +175 55/175/56 kV/s V W C mJ Avalanche energy, single pu...
Description Low Voltage MOSFETs - OptiMOS Power MOSFET, 30V, TO-262, RDSon = 4.2mOhm, 80A, LL

File Size 526.74K  /  8 Page

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    Infineon
Part No. SPI80N03S2L-03
OCR Text OptiMOS(R) Buck converter series Feature * N-Channel Product Summary VDS RDS(on) max. SMD version ID P- TO263 -3-2 30 2.8 80 P- TO...T j , Tstg 320 810 30 6 20 300 -55... +175 55/175/56 kV/s V W C mJ Avalanche energy, single pu...
Description Low Voltage MOSFETs - OptiMOS Power MOSFET, 30V, TO-262, RDSon = 3.1mOhm, 80A, LL

File Size 523.84K  /  8 Page

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    SPI80N04S2-04 SPP80N04S2-04 SPB80N04S2-04

INFINEON[Infineon Technologies AG]
Part No. SPI80N04S2-04 SPP80N04S2-04 SPB80N04S2-04
OCR Text OptiMOS Power-Transistor Feature * N-Channel Product Summary VDS RDS(on) max. SMD version ID P- TO262 -3-1 P- TO263 -3-2 40 3.4 80 ...T j , T stg 320 810 30 6 20 300 -55... +175 55/175/56 kV/s V W C mJ Avalanche energy, single p...
Description OptiMOS Power-Transistor 的OptiMOS功率晶体

File Size 267.15K  /  8 Page

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    Infineon
Part No. SPI80N03S2-03
OCR Text OptiMOS(R) Buck converter series Feature * N-Channel Product Summary VDS RDS(on) max. SMD version ID P- TO263 -3-2 30 3.1 80 P- TO...T j , Tstg 320 810 30 6 20 300 -55... +175 55/175/56 kV/s V W C mJ Avalanche energy, single pu...
Description Low Voltage MOSFETs - OptiMOS Power MOSFET, 30V, TO-262, RDSon = 3.4 mOhm, 80A, NL

File Size 528.44K  /  8 Page

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    Infineon Technologies
Part No. 20N03L
OCR Text OptiMOS(R) Buck converter series Feature *N-Channel Product Summary VDS RDS(on) ID P- TO251 -3-1 30 20 30 P- TO252 -3-11 V m A ...T j=25C VDS=30V, V GS=0V, T j=125C IDSS IGSS 0.01 10 1 1 100 100 A Gate-source leakage curr...
Description Search --To IPD20N03L

File Size 195.20K  /  8 Page

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    IPI100N06S3L-03 IPB100N06S3L-03 IPP100N06S3L-03 SP0000-87977 SP0000-87978 SP0000-87979

Infineon Technologies AG
Part No. IPI100N06S3L-03 IPB100N06S3L-03 IPP100N06S3L-03 SP0000-87977 SP0000-87978 SP0000-87979
OCR Text OptiMOS(R)-T Power-Transistor Features * N-channel - Logic Level - Enhancement mode * Automotive AEC Q101 qualified * MSL1 up to 260C peak reflow * 175C operating temperature * Green package (lead free) * Ultra low Rds(on) * 100% Avalanche...
Description OptiMOST Power-Transistor
OPTIMOS⑶-T POWER-TRANSISTOR
OptiMOS㈢-T Power-Transistor
OptiMOS?-T Power-Transistor

File Size 152.66K  /  8 Page

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    IPB180N04S3-02

Infineon Technologies AG
Part No. IPB180N04S3-02
OCR Text OptiMOS(R)-T Power-Transistor Product Summary V DS R DS(on) ID 40 1.5 180 V m A Features * N-channel - Enhancement mode * Automotive AEC Q101 qualified * MSL1 up to 260C peak reflow * 175C operating temperature * Green package (RoHS c...
Description OptiMOS庐-T Power-Transistor
OptiMOS?-T Power-Transistor

File Size 181.54K  /  9 Page

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For optimos-t Found Datasheets File :: 702    Search Time::3.297ms    
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