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  0600 Datasheet PDF File

For 0600 Found Datasheets File :: 132169    Search Time::5.046ms    
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    BT138-600 BT138

SemiWell Semiconductor
Part No. BT138-600 BT138
OCR Text ...etitive t =10ms 12 100/110 50 5.0 Over any 20ms period 0.5 2.0 10 - 40 ~ 125 - 40 ~ 150 2.0 Parameter Repetitive Peak Off-State Voltage ...600 Electrical Characteristics Symbol Items Repetitive Peak Off-State Current Peak On-State Volta...
Description 600V Vdrm 12A Triac, 1.65V Peak On-State Voltage, 2.0mA Repetitive Peak Off-State Current
Bi-Directional Triode Thyristor

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    BT137-600 BT137-500

Comset Semiconductor
Part No. BT137-600 BT137-500
OCR Text ... pg (av) average gate power 0.5 w t st g storage temperature range -45 to +150 c t j operating junction temperature 110 c ...600 600 - - bt137-800 800 - - v rrm repetitive peak reverse voltage i d = 0.5 ma bt137-500 ...
Description TRIACS

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    Apollo Electron Co., Ltd.
Apollo Electron Co., Lt...
Part No. BT137-600 TM861M-L BTA08-600 TM861S-L TF8A80 TM861M/S-L BTB08-600
OCR Text ...ve 8 .0 a i tsm surge on-state current one cycle, 50hz/60hz, peak, non-repetitive 80/84 a i...600, btb08-600, bt137-600, bcr8pm-12 , tm861m/s-l series. ...
Description Standard Triac

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    BYV34G-600

NXP Semiconductors
Part No. BYV34G-600
OCR Text ... Tmb 138 C square waveform; = 0.5; Tmb 107 C; both diodes conducting tp = 25 s square waveform; = 0.5; Tmb 107 C; per diode tp = 10 ms;...600 600 600 20 20 120 132 +150 150 Unit V V V A A A A C C BYV34G-600_1 (c) NXP B.V. 2009. All ...
Description Dual ultrafast power diode
Dual rectifier diode, ultrafast

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    NXP Semiconductors N.V.
Part No. BT131W-600
OCR Text ...2 ti 2 t for fusing t = 10 ms - 0.5 a 2 s di t /dt repetitive rate of rise of i tm = 1.5 a; i g = 0.2 a; on-state current after di g /dt = 0.2 a/s triggering t2+ g+ - 50 a/ s t2+ g- - 50 a/s t2- g- - 50 a/s t2- g+ - 10 a/s i gm peak gate ...
Description 4Q Triac 4Q双向可控

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    BT131W-600 BT131W-500

Philips Semiconductors
Part No. BT131W-600 BT131W-500
OCR Text ... ms t = 10 ms ITM = 1.5 A; IG = 0.2 A; dIG/dt = 0.2 A/s T2+ G+ T2+ GT2- GT2- G+ CONDITIONS MIN. -40 -500 5001 1 10 11 0.5 50 50 50 10 2 5 5 0.5 150 125 MAX. -600 6001 UNIT V A A A A2s A/s A/s A/s A/s A V W W C C I2t dIT/dt IGM VGM PGM...
Description Triacs logic level(双向可控硅逻辑电平)

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    BYV28-600

Vishay Siliconix
Part No. BYV28-600
OCR Text ... f = 3.5, t j = 175 c v f - - 0.95 v i f = 5 a, t j = 175 c v f - - 1.06 v reverse current v r = v rrm i r --5a v r = v rrm , t j = 1...600 - - v reverse recovery time i f = 0.5 a, i r = 1 a, i r = 0.25 a t rr --50ns forward recovery...
Description Ultra-Fast Avalanche Sinterglass Diode

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    BT138-600

Inchange Semiconductor Company Limited
Part No. BT138-600
OCR Text ... H E SEM CONDITIONS ID=0.1mA ID=0.5mA OND IC T2+ G+ T2+ G- TO-220AB OR UCT MIN MAX UNIT 600 600 30 30 30 100 1.7 50 V V VD =12V; RL = 100| IGT Gate trigger current T2- GT2- G+ mA VT IH On-state volt...
Description Triacs

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    BYV29FX-600

NXP Semiconductors
Part No. BYV29FX-600
OCR Text ...tions Min square-wave pulse; = 0.5; Th = 72 C; see Figure 1; see Figure 2 IF = 1 A; VR = 30 V; dIF/dt = 100 A/s; Tj = 25 C; see Figure 5 IF = 9 A; Tj = 150 C; see Figure 4 Typ Max 600 9 Unit V A repetitive peak reverse voltage average forw...
Description Enhanced ultrafast rectifier diode

File Size 138.00K  /  10 Page

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    MDV04-600 MDV04-600RL 4403 MDV04600

ST Microelectronics
SGS Thomson Microelectronics
STMICROELECTRONICS[STMicroelectronics]
意法半导
Part No. MDV04-600 MDV04-600RL 4403 MDV04600
OCR Text ...operating junction temperature =0.5 Ta=115C triangular tp=5s F=1kHz square tp = 10 ms sinusoidal VALUE 600 4 100 80 - 40 to 150 150 Unit V A A A C C DO-201AD (plastic) (1) on infinite heatsink with 10mm lead length August 1999 - Ed...
Description HIGH VOLTAGE ULTRA-FAST DIODE FOR VIDEO
From old datasheet system

File Size 39.00K  /  4 Page

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